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John G Wasserbauer

from Castro Valley, CA
Age ~61
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Also known as:
John Gilmary Wasserbauer, John S Wasserbauer, John G Mcnab
Phone and address:
17647 Trenton Dr, Hayward, CA 94546
(510) 586-0594
Related to:
Stacie Elaine Brown, 55Linda B Gregory, 84John G Mcnab, 98George Mcnab, 90
Connected to:
Allison J Wasser, 46Andrea C Wasser, 45Anita L Wasserburger, 78Caroline E Wasser, 27Cindy A Wasserbauer, 59Danica M Wasser, 34David F Wasserboehr, 73Elizabeth Wasserburger, 33Ilanit M Wasserberg, 57Kevin J Wasser, 59

John Wasserbauer Phones & Addresses

  • 17647 Trenton Dr, Castro Valley, CA 94546 (510) 586-0594
  • 1319 E Juana Ave, San Leandro, CA 94577 (510) 352-5533
  • 1386 Flannagan Ct, Erie, CO 80516 (303) 828-3761
  • Medford, MA
  • Sanger, CA
  • Menlo Park, CA
  • Boston, MA
  • Boulder, CO

Work

Company: Indepth consulting Aug 2012 to Aug 2013 Position: Principal scientist

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Uc Santa Barbara 1987 to 1993 Specialities: Computer Engineering

Skills

Characterization • Semiconductors • Product Development • Failure Analysis • Optoelectronics • Reliability • Patents • Photonics • Testing • Optoelectronic Device Design • Semiconductor Process Development • Business Development • Systems Engineering • Component Design and Assembly • Dc and Rf Test • Materials Development • Patent Generation • Ip Evaluation and Strategy • Proposal Writing • Technology Assessment • Innovation • Technology Evaluation • Materials Characterization • Semiconductor Market Analysis • Business Plan Development

Languages

French • Spanish • English

Industries

Semiconductors

Resumes

Resumes

John Wasserbauer Photo 1

Principal Scientist

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Location:
6500 Wedgewood Rd north, Maple Grove, MN
Industry:
Semiconductors
Work:
Indepth Consulting Aug 2012 - Aug 2013
Principal Scientist
Te Connectivity Aug 2012 - Aug 2013
Principal Scientist
Arrayed Fiberoptics 2011 - 2012
R and D Manager
Oepic Semiconductors Oct 2010 - Sep 2011
Director of Research and Development
Lockheed Martin Dec 2009 - Mar 2011
Consultant
Education:
Uc Santa Barbara 1987 - 1993
Doctorates, Doctor of Philosophy, Computer Engineering Ecole Centrale De Lyon 1985 - 1986
Cornell University 1980 - 1984
Bachelors, Bachelor of Science, Materials Science, Engineering
Skills:
Characterization
Semiconductors
Product Development
Failure Analysis
Optoelectronics
Reliability
Patents
Photonics
Testing
Optoelectronic Device Design
Semiconductor Process Development
Business Development
Systems Engineering
Component Design and Assembly
Dc and Rf Test
Materials Development
Patent Generation
Ip Evaluation and Strategy
Proposal Writing
Technology Assessment
Innovation
Technology Evaluation
Materials Characterization
Semiconductor Market Analysis
Business Plan Development
Languages:
French
Spanish
English

Business Records

Name / Title
Company / Classification
Phones & Addresses
John Wasserbauer
Manager
Indepth Consulting, LLC
3155 E Patrick Ln, Las Vegas, NV 89120
4995 Proctor Rd, Hayward, CA 94546
John Wasserbauer
GROUP4 Labs, LLC
Semiconductor Development and Manufactur
1600 Adams Dr, Menlo Park, CA 94025

Publications

Us Patents

Hybrid Vertical Cavity Laser With Buried Interface

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US Patent:
6618414, Sep 9, 2003
Filed:
Mar 25, 2002
Appl. No.:
10/105473
Inventors:
John Wasserbauer - Erie CO
Leo M. F. Chirovsky - Superior CO
Assignee:
Optical Communication Products, Inc. - Chatsworth CA
International Classification:
H01S 308
US Classification:
372 45, 372 96, 438 22
Abstract:
A vertical cavity laser includes an optical cavity adjacent to a first mirror, the optical cavity having a semiconductor portion and a dielectric spacer layer. A dielectric DBR is deposited adjacent to the dielectric spacer layer. The interface between the semiconductor portion of the optical cavity and the dielectric spacer layer is advantageously located at or near a null in the optical standing wave intensity pattern of the vertical cavity laser to reduce the losses or scattering associated with that interface.

Low Thermal Impedance Dbr For Optoelectronic Devices

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US Patent:
6720585, Apr 13, 2004
Filed:
Jan 11, 2002
Appl. No.:
10/044358
Inventors:
John Wasserbauer - Erie CO
Ryan Likeke Naone - Boulder CO
Andrew William Jackson - Boulder CO
Assignee:
Optical Communication Products, Inc. - Woodland Hills CA
International Classification:
H01L 3300
US Classification:
257 98, 257 94, 257 97, 257102, 438 46, 438 47, 372 45, 372 46, 372 96
Abstract:
A low thermal impedance optoelectronic device includes an optical cavity adjacent a low thermal impedance DBR that provides improved heat dissipation and temperature performance. The thermal impedance of the DBR may be reduced by increasing the relative or absolute thickness of a layer of high thermal conductivity material relative to a layer of low thermal conductivity material for at least a portion of the mirror periods. The thermal impedance may also be reduced by increasing the distance between phonon scattering surfaces by increasing the thickness of the high thermal conductivity layer, the low thermal conductivity layer or both.

Single Mode Vertical Cavity Surface Emitting Laser

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US Patent:
6751245, Jun 15, 2004
Filed:
Jun 2, 2000
Appl. No.:
09/587074
Inventors:
John G. Wasserbauer - Erie CO
Jeffrey W. Scott - Boulder CO
Assignee:
Optical Communication Products, Inc. - Woodland Hills CA
International Classification:
H01S 500
US Classification:
372 46, 372 45, 372372, 372 96
Abstract:
A surface emitting laser with spatially varying optical loss to provide single mode operation. The optical loss may be introduced with an anti-phased ohmic contacts. Current injection may be constricted to a diameter that is different than the diameter of the ohmic aperture, allowing for optimization of carrier profiles for high-speed performance. Methods for index guiding are introduced to further the reproducibility of the invention.

Method And Apparatus For Performing Whole Wafer Burn-In

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US Patent:
6830940, Dec 14, 2004
Filed:
Nov 16, 2001
Appl. No.:
09/991568
Inventors:
John Wasserbauer - Erie CO
Stewart A. Feld - Broomfield CO
Assignee:
Optical Communication Products, Inc. - Woodland Hills CA
International Classification:
H01L 2100
US Classification:
438 14, 438 17, 438 19
Abstract:
A method and apparatus for burning in a semiconductor wafer having a plurality of active devices utilizes temporary conductive interconnect layers to separately couple at least a portion of the anodes of the active devices together as well as at least a portion of the cathodes of the devices together. A simplified probed pad, having a reduced number of contacts may then be utilized to apply a substantially constant voltage or current to the devices. The temporary conductive interconnect layer may be patterned to include device level resistors or array level resistors that may be used to mitigate the effects of short circuits or open circuits on the processing of the devices.

Temperature Insensitive Vcsel

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US Patent:
6879612, Apr 12, 2005
Filed:
Jan 23, 2002
Appl. No.:
10/054826
Inventors:
John Wasserbauer - Erie CO, US
Assignee:
Optical Communication Products, Inc. - Woodland Hills CA
International Classification:
H01S005/00
US Classification:
372 45, 372 43, 372 44, 372 46, 372 47, 372 48, 372 49, 372 50
Abstract:
A temperature insensitive vertical cavity laser includes an active region, having a plurality of quantum wells, formed between first and second mirrors. The gain of each of said quantum wells or groups of quantum wells operate quasi-independently at different temperatures such that stimulated emission is dominated by a different quantum well or group of quantum wells at different temperatures.

Mirror Structure For Reducing The Effect Of Feedback On A Vcsel

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US Patent:
6882673, Apr 19, 2005
Filed:
Jan 15, 2002
Appl. No.:
10/051510
Inventors:
John Wasserbauer - Erie CO, US
Jeffrey W. Scott - Carpenteria CA, US
Assignee:
Optical Communication Products, Inc. - Woodland Hills CA
International Classification:
H01S005/00
H01S003/08
US Classification:
372 50, 372 96
Abstract:
An exemplary embodiment of the present invention integrates an absorbing layer into the emitting mirror of a VCSEL to reduce the reflectivity of the emitting mirror as seen by the feedback optical wave. The absorbing layer may be made of a suitable semiconductor material, such as a GaAs layer in a laser emitting near 850 nm or highly doped p-layer, and may disposed epitaxially in a semiconductor or metamorphic mirror. Alternatively, a metal layer may be disposed in the dielectric portion of a hybrid mirror or all-dielectric mirror.

Antiguide Single Mode Vertical Cavity Laser

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US Patent:
6901099, May 31, 2005
Filed:
Jul 1, 2002
Appl. No.:
10/186779
Inventors:
John G. Wasserbauer - Erie CO, US
Assignee:
Optical Communication Products, Inc. - Woodland Hills CA
International Classification:
H01S005/00
H01S003/08
US Classification:
372 46, 372 45, 372 96, 372 99
Abstract:
A vertical cavity laser (VCL) including a first mirror formed adjacent a substrate, an optical cavity formed adjacent the first mirror, a second mirror formed adjacent the optical cavity, a first current and/or optical aperture formed within the cavity, within the mirror or at the surface of the mirror, and an antiguide for reducing, balancing, or reversing the index step created by the first current and/or optical aperture. The VCL may further include a second optical aperture for confining the optical mode to provide single mode operation.

Folded Cavity Semiconductor Optical Amplifier (Fcsoa)

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US Patent:
7126750, Oct 24, 2006
Filed:
Jul 7, 2003
Appl. No.:
10/615426
Inventors:
John Gilmary Wasserbauer - Erie CO, US
International Classification:
H01S 3/00
US Classification:
359344
Abstract:
A folded cavity semiconductor optical amplifier is provided that includes a first mirror disposed on a substrate of semiconductor material and an active region formed thereon consisting of an optical cavity with a gain medium. The optical cavity being disposed adjacent the first mirror. A second mirror is formed and disposed on the active region on a surface opposite the first mirror. The active region of the amplifier includes input and output portions formed in one or both mirrors. The input and output portions formed from layers of reduced reflectivity relative to the first or second mirror and a longitudinal waveguide integral to the optical cavity connecting the input and output portions to allow for light to be amplified to enter at the input port, travel through the vertical cavity and longitudinal waveguide, and exit as amplified light at the output portion of the waveguide structure.
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John G Wasserbauer from Castro Valley, CA, age ~61 Get Report