Inventors:
- Toledo OH, US
Alvin D. Compaan - Holland OH, US
Victor V. Plotnikov - Toledo OH, US
Paul G. Chamberlin - Toledo OH, US
John M. Stayancho - Marblehead OH, US
Ambalanath Shan - Toledo OH, US
International Classification:
H01L 31/115
H01L 31/0224
G01T 3/08
Abstract:
A particle detector having a support member. A front electrode layer is disposed over the support member. A semiconductor junction having at least an n-type layer and at least a p-type layer is disposed over the front electrode layer. A back electrode layer is disposed over the semiconductor junction. The back electrode layer has a thickness which is selected to permit particles having energies in the range from about 0.5 MeV to about 5 MeV to enter the semiconductor junction.