Inventors:
Michael C. Gaidis - Wappingers Falls NY
Joachim Nuetzel - Fishkill NY
Walter Glashauser - Ringstrasse, DE
Eugene OSullivan - Nyack NY
Gregory Costrini - Hopewell Junction NY
Stephen L. Brown - Carmel NY
Frank Findeis - Hopewell Junction NY
Chanro Park - Fishkill NY
Assignee:
Infineon Technologies AG - Munich
International Business Machines Corporation - Armonk NY
International Classification:
H01L 214763
Abstract:
Encapsulating areas of metallization in a liner material, such as Tantalum, Tantalum Nitride, Silicon Carbide allows aggressive or harsh processing steps to be used. These aggresive processing steps offer the possibility of fabricating new device architectures. In addition, by encapsulating the areas of metallization, metal ion migration and electromigration can be prevented. Further, the encapsulated areas of metallization can serve as a self-aligning etch mask. Thus, vias etched between adjacent areas of metallization allow the area of the substrate allocated to the via to be significantly reduced without increasing the possibility of electrical shorts to the adjacent areas of metallization.