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Joachim W Ahner

from Livermore, CA
Age ~65
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Also known as:
Joachim W Ahnes, Joahim Ahner, Joachim Ahnt, Joachim R
Phone and address:
3090 Hansen Rd, Livermore, CA 94550
(925) 373-1882
Related to:
Annette Ahner, 53
Connected to:
Alyssa Ahner, 33Darryl J Ahner, 62Deborah S Ahner, 59Timothy E Ahner, 51Kim E Ahnert, 72Robert E Ahnert, 64Nels K Ahnlund, 64Douglas L Ahnquist, 67Alicia M Aho, 43

Joachim Ahner Phones & Addresses

  • 3090 Hansen Rd, Livermore, CA 94550 (925) 373-1882
  • 39370 Civic Center Dr #406, Fremont, CA 94538
  • 16 Richey Ave, Pittsburgh, PA 15214 (412) 231-1702 (412) 480-9479
  • 2310 Sherbrook St, Pittsburgh, PA 15217 (412) 422-7712 (570) 233-6636
  • Alameda, CA
  • 3090 Hansen Rd, Livermore, CA 94550 (412) 480-9479

Work

Position: Professional/Technical

Education

Degree: Associate degree or higher

Resumes

Resumes

Joachim Ahner Photo 1

Managing Technologist

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Location:
San Francisco, CA
Industry:
Computer Hardware
Work:
University of Pittsburgh 1996 - 2003
Professor
Seagate Technology 1996 - 2003
Managing Technologist
Education:
Zentrum Für Wissenschaftliche Weiterbildung (Philipps - Universität Marburg)
Doctorates, Doctor of Philosophy, Physics, Philosophy
Skills:
Design of Experiments
Failure Analysis
Thin Films
Hard Drives
Magnetics
Sata
Scsi
Ssd
Joachim Ahner Photo 2

Joachim Ahner

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Publications

Isbn (Books And Publications)

Nanoworkbenches: Principles And Applications

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Author

Joachim Ahner

ISBN #

0387243895

Us Patents

Ferroelectric Probe Storage Apparatus

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US Patent:
7447140, Nov 4, 2008
Filed:
Jul 30, 2004
Appl. No.:
10/902910
Inventors:
Mark Ian Lutwyche - Mars PA, US
Earl Chrzaszcz Johns - Sewickley PA, US
Martin Gerard Forrester - Murrysville PA, US
Mark David Bedillion - Oakdale PA, US
Andreas Karl Roelofs - Pittsburgh PA, US
Joachim Walter Ahner - Pittsburgh PA, US
Robert Earl Rottmayer - Wexford PA, US
Andre Y L Liem - Wexford PA, US
Edward S. Skalko - Allison Park PA, US
Xueshi Yang - Pittsburgh PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 9/00
US Classification:
369126
Abstract:
An apparatus comprises a ferroelectric storage medium, and a transducer for reading data from the ferroelectric storage medium and for writing data to the ferroelectric storage medium, wherein the transducer includes a substrate and a probe coupled to the substrate, wherein the probe includes a conductive element and a bilayer structure causing the probe to bend toward the ferroelectric storage medium.

Epitaxial Ferroelectric And Magnetic Recording Structures Including Graded Lattice Matching Layers

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US Patent:
7541105, Jun 2, 2009
Filed:
Sep 25, 2006
Appl. No.:
11/526413
Inventors:
Thomas Francis Ambrose - Sewickley PA, US
Joachim Walter Ahner - Pittsburgh PA, US
Kai-Chieh Chang - Wexford PA, US
Maissarath Nassirou - Pittsburgh PA, US
Robert Hempstead - Pittsburgh PA, US
Mark Lutwyche - Reisterstown MD, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 5/66
US Classification:
428831, 428826, 4288462, 4288464, 4288401, 428842
Abstract:
Epitaxial ferroelectric and magnetic recording structures having graded lattice matching layers are disclosed. A single crystal material such as Si may be used as a substrate material upon which the graded lattice matching layers are deposited. The lattice matching layers may comprise metals and metal alloys, or may comprise oxides doped with selected elements or deposited under different oxygen pressures. A recording layer, such as ferroelectric lead zirconium titanate or a magnetic Fe/Pt multilayer structure, is deposited on the graded lattice matching layers.

Mass Storage Apparatus Using Fluorine Mediated Self-Assembly Monolayers Of Nanoparticles Recording Medium

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US Patent:
7638211, Dec 29, 2009
Filed:
Feb 9, 2005
Appl. No.:
11/055004
Inventors:
Joachim Walter Ahner - Pittsburgh PA, US
Nisha Shukla - Pittsburgh PA, US
Dieter Weller - San Jose CA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 5/66
US Classification:
428832, 427131
Abstract:
A magnetic recording medium for high-density recording, having a doped interlayer to preserve the uniformity and ordering of the magnetic nanoparticles in its recording layer. The interlayer is doped with a high electronegativity material. The dopant atoms in the interlayer interact with the ferromagnetic nanoparticles to promote the formation of a homogeneous, ordered monolayer of nanoparticles in the recording layer. In addition, the high electronegative property of the dopant atoms holds the nanoparticles in place during the subsequent annealing process to prevent sintering and disordering damage. In one embodiment, the dopant is a halogen or non-halogen material having a high electronegativity, which is not polymerized to the matrix material in the interlayer. The matrix material may be polymerized. An example of a doped interlayer is a fluorinated carbon film.

Multilayer Ferroelectric Data Storage System With Regenerative Read

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US Patent:
7821808, Oct 26, 2010
Filed:
Jan 30, 2009
Appl. No.:
12/363062
Inventors:
Tong Zhao - Cranberry Township PA, US
Martin Gerard Forrester - Murrysville PA, US
Florin Zavaliche - Cranberry Township PA, US
Joachim Ahner - Pittsburgh PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11C 11/22
US Classification:
365145, 365117, 365173, 365171, 257295, 257752
Abstract:
A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.

Non-Destructive Read Back For Ferroelectric Data Storage Device

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US Patent:
7916513, Mar 29, 2011
Filed:
Nov 5, 2008
Appl. No.:
12/265418
Inventors:
Shan Hu - Pittsburgh PA, US
Tong Zhao - Cranberry Township PA, US
Florin Zavaliche - Cranberry Township PA, US
Joachim Ahner - Pittsburgh PA, US
Stephen John Wrazien - Cranberry Township PA, US
Martin Gerard Forrester - Murrysville PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11C 11/22
G11C 11/24
US Classification:
365145, 365149
Abstract:
A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.

Reconfigurable Electric Circuitry And Method Of Making Same

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US Patent:
8227701, Jul 24, 2012
Filed:
Jan 26, 2009
Appl. No.:
12/359386
Inventors:
Stephen John Wrazien - Cranberry Township PA, US
Florin Zavaliche - Cranberry Township PA, US
Joachim Walter Ahner - Pittsburgh PA, US
Tong Zhao - Cranberry Township PA, US
Martin Gerard Forrester - Murrysville PA, US
Shan Hu - Allison Park PA, US
Assignee:
Seagate Technology LLC - Cupertino CA
International Classification:
H05K 1/03
US Classification:
174256, 174250
Abstract:
A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.

Laminated Contact Pad For A Transducer Head

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US Patent:
8395863, Mar 12, 2013
Filed:
Jul 29, 2010
Appl. No.:
12/846183
Inventors:
Jeremy A. Thurn - Bloomington MN, US
Ibro Tabakovic - Edina MN, US
Maissarath Nassirou - Fremont CA, US
Brian Karr - Savage MN, US
Kurt W. Wierman - Eden Prairie MN, US
Joachim W. Ahner - Livermore CA, US
Assignee:
Seagate Technology LLC - Cupertino CA
International Classification:
G11B 5/187
G11B 5/60
US Classification:
36012516, 36012526, 3602352, 3602357, 3602358, 3602365, 3602366
Abstract:
A contact pad includes a first layer of material with a first yield strength and a second layer of material with a second yield strength is laminated to the first layer. A third yield strength of the laminated composite of the first layer and the second layer exceeds the first yield strength and the second yield strength due to the Hall-Petch phenomenon. An overcoat covers an edge of the first layer and the second layer of the contact pad to prevent wear. A method of creating the contact pad or other microelectronic structure includes depositing a first layer of material with a first yield strength on a substrate. A second layer of material with a second yield strength is deposited on the first layer. An edge of the first layer and the second layer is coated with an overcoat material to prevent wear of the first and second layers.

Memory Array Having A Layer With Electrical Conductivity Anisotropy

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US Patent:
20050285169, Dec 29, 2005
Filed:
Jun 29, 2004
Appl. No.:
10/879670
Inventors:
Joachim Ahner - Pittsburgh PA, US
Jun Yu - Pittsburgh PA, US
Dieter Weller - Gibsonia PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
H01L029/76
US Classification:
257295000
Abstract:
A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.
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Joachim W Ahner from Livermore, CA, age ~65 Get Report