Jerome B Klatskin

40807223, Mar 28, 1978

Mar 22, 1976

5/668906

Jerome Barnard Klatskin - Princeton Junction NJ
Arye Rosen - Cherry Hill NJ

RCA Corporation - New York NY

B01J 1700

29580

A metal film is deposited on both sides of a semiconductor wafer. A conductive support layer, e. g. gold, is deposited on one of the metal film layers. Using standard procedures, the semiconductor material is then etched to form a plurality of semiconductor devices on the support. A photoresist is next applied over the device side of the support. Windows are opened into the photoresist above each of the devices. A gold wire is attached near the edge of each device so that the devices are each electrically connected in parallel to all of said devices and to said support. A copper heat capacitor is now plated on each device. The gold wires and the photoresist are removed, leaving a copper heat capacitor on the semiconductor device. A copper heat can be formed on the device, with or without formation of the copper heat capacitor, but always after formation of the device per se.

39322262, Jan 13, 1976

Dec 6, 1974

5/530401

Jerome Barnard Klatskin - Princeton Junction NJ
Arye Rosen - Cherry Hill NJ

RCA Corporation - New York NY

C25D 502

204 16

An improved method of electrically interconnecting a plurality of spaced semiconductor elements adjacent to a substrate, each element having a mesa shape with a top surface spaced apart from the substrate and a side surface, includes coating the side surfaces of the elements with a protective material, filling in the space above the substrate and in between the elements with a temporary support material, depositing a continuous electrically-conductive layer on the support material and in electrical contact with the top surfaces of a plurality of the elements, and then removing the temporary support material to form an electrically-conductive homogeneous air-bridge. The protective material protects the elements from being exposed to the temporary support material. By this method, a plurality of metallized air-bridges can be formed simultaneously.