Search

James R Velebir

from Laguna Niguel, CA
Age ~83
Get Report
Related to:
Scott Thomas Wening, 75Gina Louise Scott, 57Amber D Mills, 62Grace ScottBecky Ruddis, 54Travis Padour, 38Mark Wening, 67
Connected to:
John Velebir, 73Alice L Veleke, 77Susan J Veleke, 78Paul E Velelis, 49John M Velella, 38Milenko Velemir, 70Kathleen A Velen, 62Bettina P Velena, 43Christa A Velenger, 33Anthony W Veleno, 48

James Velebir Phones & Addresses

  • 29752 Teracina, Laguna Niguel, CA 92677 (949) 495-3102

Work

Position: Retired

Education

Degree: Associate degree or higher

Emails

j***[email protected]

Publications

Us Patents

Method To Produce Complementary Heterojunction Bipolar Transistors

View page
US Patent:
52623351, Nov 16, 1993
Filed:
Oct 8, 1991
Appl. No.:
7/772809
Inventors:
Dwight C. Streit - Long Beach CA
Aaron K. Oki - Torrance CA
Donald K. Umemoto - Manhattan Beach CA
James R. Velebir - Laguna Niguel CA
Assignee:
TRW Inc. - Redondo Beach CA
International Classification:
H01L 21265
H01L 2970
US Classification:
437 31
Abstract:
Disclosed is a method for fabricating complementary heterojunction bipolar transistors on a common substrate. The method comprises the steps of depositing a PNP profile by molecular beam epitaxy on an appropriate substrate and then depositing a layer of silicon nitride on the PNP profile just deposited. The substrate is then heated in a vacuum in order to densify the silicon nitride. A mask and resist layer are used to produce the desired PNP profile patterns. The NPN profile is deposited on the area of the substrate etched away as well as on the silicon nitride layer protecting the already deposited PNP layers. The NPN profile is then patterned using a resist and masking process. The polycrystalline NPN area on top of the silicon nitride layer and the remaining silicon nitride layer are etched away forming two adjacent complementary NPN and PNP profiles on a common substrate. In the fabrication of the heterojunction bipolar transistor circuits, the P-ohmic contacts on both the NPN and PNP materials is evaporated at the appropriate locations simultaneously. All of the N-ohmic contacts are also deposited simultaneously.

Formation Of A Smooth Surface On An Optical Component

View page
US Patent:
20030000919, Jan 2, 2003
Filed:
Jun 29, 2001
Appl. No.:
09/896127
Inventors:
James Velebir - Laguna Niguel CA, US
International Classification:
G02B006/12
US Classification:
216/024000, 216/099000, 134/001100, 134/002000, 134/003000
Abstract:
A method for smoothing one or more surfaces on an optical component is disclosed. The method includes obtaining an optical component having one or more surfaces and performing a wet etch so as to smooth the one or more surfaces.
Control profile
James R Velebir from Laguna Niguel, CA, age ~83 Get Report