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Ichiro Fujii

from Plano, TX
Age ~70
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Also known as:
Ichiro Fuj, Ichiro Fuji
Phone and address:
4733 Holly Berry Dr, Plano, TX 75093
(972) 964-6428
Related to:
Christal ThomasLaurie A Shelton, 70Alan W Bryant, 57Sarah Bryant, 40George Bryant, 48Sharron Mintz, 75
Connected to:
Aiko Fujii, 98Chie Fujii, 47Dave C Fujii, 77Jeanne M Fujii, 72Kayoko K Fujii, 76Kozo Fujii, 73Maria R Fujii, 73Mary M Fujii, 101Masahiko Fujii, 67Patricia A Fujii, 93

Ichiro Fujii Phones & Addresses

  • 4733 Holly Berry Dr, Plano, TX 75093 (972) 964-6428 (972) 985-1159
  • 3840 Nantucket Dr, Plano, TX 75023 (972) 964-6428 (972) 985-1159
  • 2338 Bent River Dr, Sugar Land, TX 77479
  • Houston, TX
  • 4733 Holly Berry Dr, Plano, TX 75093 (214) 435-3164

Work

Position: Protective Service Occupations

Education

Degree: Graduate or professional degree

Emails

i***[email protected]

Resumes

Resumes

Ichiro Fujii Photo 1

Senior Member Of Technical Staff At Ti

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Location:
Dallas, TX
Industry:
Semiconductors
Work:
Texas Instruments
Senior Member of Technical Staff at Ti
Texas Instruments Jul 1998 - May 2001
Us and Europe Marketing Manager
Texas Instruments Jul 1998 - May 2001
Product Engineer
Ichiro Fujii Photo 2

Ichiro Fujii

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Publications

Us Patents

Metal-Insulator-Semiconductor Photocell And Imager

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US Patent:
6534808, Mar 18, 2003
Filed:
Jan 11, 2001
Appl. No.:
09/758567
Inventors:
Akitoshi Nishimura - Tokyo, JP
Ichiro Fujii - Dallas TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 31062
US Classification:
257290, 257292
Abstract:
A photocell for detecting light includes at least two tiers or structures, one disposed over the other, each tier having a metal-insulator-semiconductor (M-I-S) or a semiconductor-insulator-metal (S-I-M) structure. Each M-I-S structure includes a semiconductor diffusion layer capable of developing a depletion region, a thin insulator layer disposed on the diffusion layer, and a contact layer disposed on the thin insulator layer. Each S-I-M structure includes a contact layer, a thin insulator layer disposed on the contact layer, and a semiconductor diffusion layer disposed on the thin insulator layer, the semiconductor layer capable of developing a depletion region. When light is incident on each depletion region, a current indicative of the light detected in each depletion region flows through the respective contact layer. Also provided is a semiconductor-insulator-metal (S-I-M) structure that detects light. Two- and three-tiered photocells made of M-I-S and/or S-I-M structures are also provided.
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Ichiro Fujii from Plano, TX, age ~70 Get Report