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Huazhi L Li

from Andover, MA
Age ~52
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Also known as:
Huanzhi Li, Li L Huazhi, Zhi Hua
Phone and address:
3 Random Ln, Andover, MA 01810
Related to:
Li Zhen, 58
Connected to:
Ace Li, 63Agnes P Li, 62Ai C LiAiguo Li, 59Ang J Li, 57Anne M Li, 79Anran Li, 35Anya Li, 27Ao L Li, 40Baoguo Li, 67

Huazhi Li Phones & Addresses

  • 3 Random Ln, Andover, MA 01810
  • 70 Park St, Somerville, MA 02143 (617) 625-8473
  • 278 Beacon St, Somerville, MA 02143
  • 2528 Massachusetts Ave, Cambridge, MA 02140 (617) 547-9049
  • 352 Riverway, Boston, MA 02115 (617) 738-8681
  • 229 Ives St, Providence, RI 02906
  • 2528 Massachusetts Ave, Cambridge, MA 02140 (617) 592-7126

Work

Position: Private Household Service Occupations

Education

Degree: High school graduate or higher

Resumes

Resumes

Huazhi Li Photo 1

Foundry Manager And Principal Scientist

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Location:
142 North Rd, Sudbury, MA 01776
Industry:
Chemicals
Work:
Arradiance - Sudbury MA since Oct 2012
Principle Scientist
Dow Electronic Materials - MA, USA Apr 2009 - Oct 2012
Senior Scientist
Rohm and Haas Electronic Materials Oct 2006 - Mar 2009
Senior Research Scientist
Harvard University 2002 - 2006
Research Associate
Education:
Brown University 1997 - 2001
Doctorates, Doctor of Philosophy, Chemistry Nanjing University 1991 - 1995
Bachelors, Bachelor of Science, Chemistry
Skills:
Thin Films
Characterization
Materials Science
Atomic Layer Deposition
Cvd
Chemistry
Organometallic Chemistry
Semiconductors
Process Engineering
Spectroscopy
Design of Experiments
R&D
Afm
Nanomaterials
Powder X Ray Diffraction
Surface Chemistry
Ald
Languages:
English
Mandarin
Huazhi Li Photo 2

Huazhi Li

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Publications

Us Patents

Method Of Forming Metal-Containing Layer Using Organometallic Compounds

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US Patent:
8012536, Sep 6, 2011
Filed:
Jun 5, 2008
Appl. No.:
12/156898
Inventors:
Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Huazhi Li - Somerville MA, US
Qing Min Wang - North Andover MA, US
Assignee:
Rohm and Haas Electronic Materials LLC - Marlborough MA
International Classification:
C23C 16/18
US Classification:
427250, 42725531, 117 84, 117 88
Abstract:
Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.

Organometallic Compounds

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US Patent:
8343580, Jan 1, 2013
Filed:
Sep 14, 2010
Appl. No.:
12/881896
Inventors:
Qing Min Wang - North Andover MA, US
Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Huazhi Li - Somerville MA, US
Assignee:
Rohm and Haas Electronic Materials LLC - Marlborough MA
International Classification:
C23C 16/18
C23C 18/44
US Classification:
4272481, 42725528, 42725531, 106 121, 106 128, 556136
Abstract:
Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.

Metal (Iv) Tetra-Amidinate Compounds And Their Use In Vapor Deposition

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US Patent:
20080003359, Jan 3, 2008
Filed:
Oct 17, 2006
Appl. No.:
11/581987
Inventors:
Roy G. Gordon - Cambridge MA, US
Jean-Sebastien Lehn - Watertown MA, US
Huazhi Li - Somerville MA, US
International Classification:
C23C 16/00
C07F 7/28
C07F 11/00
US Classification:
4272481, 556 51, 556 57
Abstract:
Metal(IV) tetrakis(N,N′-dialkylamidinates) were synthesized and characterized. Exemplary metals include hafnium, zirconium, tantalum, niobium, tungsten, molybdenum, tin and uranium. These compounds are volatile, highly stable thermally, and suitable for vapor deposition of metals and their oxides, nitrides and other compounds.
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Huazhi L Li from Andover, MA, age ~52 Get Report