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Hery S Djie

from San Jose, CA
Age ~47
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Also known as:
Hery Susanto Djie, Hery Irawaty Djie, Irawaty Djie, Henry S Djie, Djie Hery
Phone and address:
1907 Fumia Pl, San Jose, CA 95131
Related to:
Irawaty Djie, 43
Connected to:
Catherine R Djiffa, 70Mehran Djifroudi, 61Regina L Djigal, 51Sona A Djiguerian, 61Mamadou Djimde, 47Amy L Djinaj, 47Constance B Djinsu, 58Anna Djintcharadze, 46Ara H Djirikian, 79Daren G Djirikian, 50

Hery Djie Phones & Addresses

  • 1907 Fumia Pl, San Jose, CA 95131
  • 190 Ryland St, San Jose, CA 95110 (408) 294-4032
  • 707 Saucon View Dr, Bethlehem, PA 18015 (610) 838-0583
  • 1907 Fumia Pl, San Jose, CA 95131 (408) 294-4032

Work

Company: Jds uniphase 2007 Position: Wafer fab engineering manager

Education

School / High School: Nanyang Technological University 2000 to 2004

Skills

Semiconductors • Optoelectronics • Photonics • Design of Experiments • Laser • Optics • Characterization • Thin Films • Yield Management

Industries

Semiconductors

Resumes

Resumes

Hery Djie Photo 1

Director, Epitaxy And Wafer Fab Engineering

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
JDS Uniphase since 2007
Wafer Fab Engineering Manager
Lehigh University 2004 - 2006
Research Scientist
Agilent Technologies 2004 - 2004
Wafer Fab Engineer
Nanyang Technological University 2002 - 2004
Research Staff
Education:
Nanyang Technological University 2000 - 2004
Universitas Pelita Harapan (UPH) 1995 - 1999
Skills:
Semiconductors
Optoelectronics
Photonics
Design of Experiments
Laser
Optics
Characterization
Thin Films
Yield Management

Publications

Us Patents

Optical Broadband Emitters And Methods Of Making The Same

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US Patent:
20070152225, Jul 5, 2007
Filed:
Dec 29, 2005
Appl. No.:
11/322814
Inventors:
Hery Djie - Bethlehem PA, US
Yan Zhou - Pleasanton CA, US
Scott Meyer - Livermore CA, US
International Classification:
H01L 29/15
US Classification:
257076000
Abstract:
An optical broadband emitter and the method of making such a broadband emitter are described. Intermixing of closely coupled multiple quantum wells, especially carrier tunneled coupled quantum wells, is described using nano-imprinting of a gel like dielectric layer such as a sol-gel derived SiOlayer into multiple stepped or graded sections to form intermixing cap regions of different thickness. A thermal annealing process is performed to condense the SiOintermixing cap and induce intermixing. A superluminescent diode is described having multiple electrodes deposited over multiple sections of different bandgaps in which each individual electrode can be either forward or reverse biased to different degrees such that each diode section can individually function as a sub-band spontaneous emitter, an amplifier/attenuator, a photon-absorber, a transparent waveguide, or a photodetector/optical power monitor.

Broadband Semiconductor Laser

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US Patent:
20080310470, Dec 18, 2008
Filed:
Jun 18, 2007
Appl. No.:
11/820061
Inventors:
Hery Susanto Djie - San Jose CA, US
International Classification:
H01S 5/00
H01L 21/00
US Classification:
372 4401, 438 46, 257E21002
Abstract:
A broadband laser having a first cladding layer, a second cladding layer. A semiconductor structure between the first and second cladding layers has a layer of inhomogeneous quantum nano heterostructures. The inhomogeneous quantum nano heterostructures are engineered to lase at a ground state and at an excited state.

Semiconductor Layer Structure With A Thin Blocking Layer

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US Patent:
20210408766, Dec 30, 2021
Filed:
Aug 21, 2020
Appl. No.:
16/947876
Inventors:
- San Jose CA, US
Xing LI - San Jose CA, US
Hery DJIE - San Jose CA, US
International Classification:
H01S 5/34
Abstract:
A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.

Emitter Array That Includes Inhomogeneous Emitter Distribution To Flatten A Beam Profile Of The Emitter Array

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US Patent:
20210066892, Mar 4, 2021
Filed:
Nov 11, 2020
Appl. No.:
16/949702
Inventors:
- San Jose CA, US
Delai ZHOU - Milpitas CA, US
Hery DJIE - San Jose CA, US
International Classification:
H01S 5/42
Abstract:
A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Zoned Optical Waveplate

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US Patent:
20200033509, Jan 30, 2020
Filed:
Oct 7, 2019
Appl. No.:
16/594138
Inventors:
- Milpitas CA, US
Joel Milgram - Ottawa, CA
Karen Denise Hendrix - Santa Rosa CA, US
Michael O'Leary - San Jose CA, US
Hery Djie - San Jose CA, US
Lu Tian - Palo Alto CA, US
Paul Colbourne - Ottawa, CA
International Classification:
G02B 1/12
G02B 5/30
G02B 1/11
G03F 7/00
G02B 5/18
G02B 27/28
Abstract:
A zoned waveplate has a series of transversely stacked birefringent zones alternating with non-birefringent zones. The birefringent and non-birefringent zones are integrally formed upon an AR-coated face of a single substrate by patterning the AR coated face of the substrate with zero-order sub-wavelength form-birefringent gratings configured to have a target retardance. The layer structure of the AR coating is designed to provide the target birefringence in the patterned zones and the reflection suppression.

Emitter Array That Includes Inhomogeneous Emitter Distribution To Flatten A Beam Profile Of The Emitter Array

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US Patent:
20190267778, Aug 29, 2019
Filed:
Nov 28, 2018
Appl. No.:
16/202510
Inventors:
- Milpitas CA, US
Delai ZHOU - Milpitas CA, US
Hery DJIE - San Jose CA, US
International Classification:
H01S 5/42
Abstract:
A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Zoned Optical Waveplate

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US Patent:
20180252845, Sep 6, 2018
Filed:
May 7, 2018
Appl. No.:
15/973109
Inventors:
- Milpitas CA, US
Joel Milgram - Ottawa, CA
Karen Denise Hendrix - Santa Rosa CA, US
Michael O'Leary - San Jose CA, US
Hery Djie - San Jose CA, US
Lu Tian - Palo Alto CA, US
Paul Colbourne - Ottawa, CA
International Classification:
G02B 1/12
G02B 5/18
G02B 27/28
G02B 5/30
G03F 7/00
G02B 1/11
Abstract:
A zoned waveplate has a series of transversely stacked birefringent zones alternating with non-birefringent zones. The birefringent and non-birefringent zones are integrally formed upon an AR-coated face of a single substrate by patterning the AR coated face of the substrate with zero-order sub-wavelength form-birefringent gratings configured to have a target retardance. The layer structure of the AR coating is designed to provide the target birefringence in the patterned zones and the reflection suppression.

Zoned Optical Waveplate

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US Patent:
20170307785, Oct 26, 2017
Filed:
Apr 24, 2017
Appl. No.:
15/495265
Inventors:
- Milpitas CA, US
Joel MILGRAM - Ottawa, CA
Karen Denise HENDRIX - Santa Rosa CA, US
Hery DJIE - San Jose CA, US
Lu TIAN - Palo Alto CA, US
Paul COLBOURNE - Ottawa, CA
International Classification:
G02B 1/12
G02B 5/30
G02B 1/11
G02B 5/18
G03F 7/00
G02B 27/28
Abstract:
A zoned waveplate has a series of transversely stacked birefringent zones alternating with non-birefringent zones. The birefringent and non-birefringent zones are integrally formed upon an AR-coated face of a single substrate by patterning the AR coated face of the substrate with zero-order sub-wavelength form-birefringent gratings configured to have a target retardance. The layer structure of the AR coating is designed to provide the target birefringence in the patterned zones and the reflection suppression.
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Hery S Djie from San Jose, CA, age ~47 Get Report