Helmut A Baumgart

6346821, Feb 12, 2002

Mar 11, 1999

09/266039

Helmut Baumgart - Glen Allen VA

Infineon Technologies AG - Munich

G01R 3126

324766, 324751

A method is provided for nondestructive measurement of minority carrier diffusion (L ) length and accordingly minority carrier lifetime (Ã ) in a semiconductor device. The method includes the steps of: reverse biasing a semiconductor device under test, scanning a focused beam of radiant energy along a length of the semiconductor device, detecting current induced in the DUT by the beam as it passes point-by-point along a length of the DUT, detecting current induced in the semiconductor device by the beam as it passes point-by-point along the scanned length of the semiconductor device to generate a signal waveform (Isignal), and determining from the Isignal waveform minority carrier diffusion length (L ) and/or minority carrier lifetime (Ã ) in the semiconductor device.

8404273, Mar 26, 2013

Apr 23, 2010

12/766706

Helmut Baumgart - Yorktown VA, US
Diefeng Gu - Yorktown VA, US

Old Dominion University Research Foundation - Norfolk VA

A61F 13/00
A61K 9/70
A61L 15/16
A61L 15/00

424443, 424444, 424445, 424446, 424447, 424449

A variety of article and systems including wound care systems, methods for making the wound care systems, bactericidal, and methods for treating wounds using these systems are disclosed. The wound care systems may include a first material comprising one or more fibers or porous media. The one or more fibers or porous media may be coated with a second material that is capable of inhibiting the growth of bacteria and killing the bacteria to render the wound care system sterile, increasing the absorbency of the first material, or both upon exposure to light. The first material may be cotton, or any suitable fibrous material, the second material may be TiO, and the light may be UV or visible light. A variety of methods including ALD may be used to coat the first material.

20110232731, Sep 29, 2011

Oct 5, 2010

12/898260

Gon NAMKOONG - Yorktown VA, US
Helmut BAUMGART - Yorktown VA, US
Keejoo LEE - Norfolk VA, US

H01L 31/02
H01L 31/06
H01L 31/0224

136255, 438 98, 257E31126

Devices including photovoltaic cells and methods of manufacture are disclosed. A photovoltaic cell includes a first electrode layer, at least one photoactive layer disposed on first electrode layer, a second electrode layer disposed on the photoactive layer, at least one first carrier collector structure with a first work function electrically coupled to the first electrode layer and extending partially in to the photoactive layer, and at least one second carrier collector structure with a second work function electrically coupled to the second electrode layer and extending partially into the photoactive layer. In the cell, the first carrier collector structure extends towards the second electrode layer without physically contacting the second carrier collector structure, and the second carrier collector structure extends towards the first electrode layer without physically contacting the first carrier collector structure. Further, at least one of the first and second electrode layers is optically transparent.

20120034410, Feb 9, 2012

Apr 23, 2010

13/265427

Helmut Baumgart - Yorktown VA, US
Gon Namkoong - Yorktown VA, US
Diefeng Gu - Newport News VA, US
Tarek Abdel-Fattah - Yorktown VA, US

OLD DOMINION UNIVERSITY RESEARCH FOUNDATION - Norfolk VA

B32B 3/02
C23C 16/44
B29C 71/00
G01N 7/00
G01D 21/00
C23C 16/04
C23C 16/56
B82Y 40/00

428 80, 427237, 427 58, 264344, 73 232, 738658, 977891, 977893

Multiple walled nested coaxial nanostructures, methods for making multiple walled nested coaxial nanostructures, and devices incorporating the coaxial nanostructures are disclosed. The coaxial nanostructures include an inner nanostructure, a first outer nanotube disposed around the inner nanostructure, and a first annular channel between the inner nanostructure and the first outer nanotube. The coaxial nanostructures have extremely high aspect ratios, ranging from about 5 to about 1,200, or about 300 to about 1200.

20120080313, Apr 5, 2012

Oct 24, 2011

13/279426

Helmut BAUMGART - Yorktown VA, US
Diefeng Gu - Newport News VA, US
Tarek Abdel-Fattah - Yorktown VA, US
Ali Beskok - Chesapeake VA, US
Seungkyung Park - Norfolk VA, US

Old Dominion University Research Foundation - Norfolk VA

C25B 7/00
B32B 38/08
B82Y 30/00
B82Y 99/00

204451, 156278, 204601, 204604, 977781, 977962

Electroosmotic (EO) devices are provided which are not subject to mechanical wear and tear and with no moving parts, and having improved flow rates and electrical properties. Atomic layer deposition can be used to prepare three electrical terminal active zeta potential modulated EO devices from porous membranes. First, second, and further thin layers of materials can be formed with the pores. Thus, embedded electrodes can be formed along the length of the pores. The zeta potential in the pores can be modified by use of a voltage potential applied the embedded electrode, thereby achieving active control of surface zeta potential within the pores and active control of flow through the pores.

20120237762, Sep 20, 2012

Mar 17, 2012

13/423216

Charles E. Hunt - Davis CA, US
Helmut Baumgart - Yorktown VA, US
Diefeng Gu - Yorktown VA, US

OLD DOMINION UNIVERSITY RESEARCH FOUNDATION - Norfolk VA
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

B32B 17/06
B05D 5/12
B05D 5/06

428332, 428690, 428432, 428446, 427 67

A device construct for lighting and display applications is fabricated from a substrate, a deposited phosphor layer over the substrate, and a layer of thermal and electrically-conductive luminescent material over the deposited layer. The layer of thermal and electrically-conductive luminescent material is a thin film that conforms to the morphology of the phosphor layer. The device is fabricated by providing a substrate, depositing a thin layer of phosphor powder on the substrate by any technique, and coating the phosphor layer with a layer of thermal and electrically-conductive luminescent material by atomic layer deposition.