Resumes
Resumes
Harris Turk Phones & Addresses
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1214 William St, Baltimore, MD 21230 (410) 385-1008
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Merrick, NY
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Glen Burnie, MD
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Fort Meade, MD
Publications
Us Patents
Method Of Fabricating A Patterned Device Using Sacrificial Spacer Layer
View pageUS Patent:
7442577, Oct 28, 2008
Filed:
Feb 14, 2006
Appl. No.:
11/357459
Inventors:
John Leslie Fitz - Baltimore MD, US
Harris Turk - Baltimore MD, US
Harris Turk - Baltimore MD, US
Assignee:
United States of America as represented by the Director, National Security Agency The United - Washington DC
International Classification:
H01L 21/50
H01L 21/48
H01L 21/44
H01L 21/48
H01L 21/44
US Classification:
438106, 438107, 438115
Abstract:
The present invention is a method of fabricating a patterned device using a sacrificial spacer layer. The first step in this process is to select an appropriate substrate and form a step thereon. The sacrificial layer is then applied to the substrate and a blocking layer is deposited on the sacrificial layer. The blocking layer is etched back to define the mask for the semiconductor structure and the sacrificial layer is removed. The substrate is then etched using the gap created by removal of the sacrificial layer.
Method Of Fabricating A Patterned Device Using Sacrificial Spacer Layer
View pageUS Patent:
7531382, May 12, 2009
Filed:
Apr 22, 2008
Appl. No.:
12/152115
Inventors:
John L. Fitz - Baltimore MD, US
Harris Turk - Baltimore MD, US
Harris Turk - Baltimore MD, US
Assignee:
The United States of America as represented by the Director National Security Agency - Washington DC
International Classification:
H01L 21/50
H01L 21/48
H01L 21/44
H01L 21/48
H01L 21/44
US Classification:
438106, 438107, 438115
Abstract:
A method of creating a patterned device by selecting a substrate; depositing a mask layer on the substrate; forming a first step on the mask layer; depositing a sacrificial layer along the first step and the mask layer; depositing a blocking layer on the sacrificial layer; removing a portion of the blocking layer, where a portion of the blocking layer remains such that no gap exists between the blocking layer and the sacrificial layer and the remaining blocking layer is adhered to the mask layer; removing a portion of the sacrificial layer such that a gap is created between the blocking layer and the first step, where a portion of the sacrificial layer remains such that the blocking layer adhered to the mask layer remains; etching the mask layer beneath the gap; and processing the substrate through the gap in the mask layer.
Method Of Fabricating A Patterned Device Using Sacrificial Spacer Layer
View pageUS Patent:
7595221, Sep 29, 2009
Filed:
Apr 22, 2008
Appl. No.:
12/148736
Inventors:
John L. Fitz - Baltimore MD, US
Harris Turk - Baltimore MD, US
Harris Turk - Baltimore MD, US
Assignee:
The United States of America as represented by the Director, National Security Agency - Washington DC
International Classification:
H01L 21/50
H01L 21/48
H01L 21/44
H01L 21/48
H01L 21/44
US Classification:
438106, 438107, 438115
Abstract:
A method of fabricating a device using a sacrificial layer by selecting a substrate; forming a first step on the substrate, where the first step is formed from a second material; depositing a sacrificial layer along the first step and the substrate; depositing a second step on a portion of the sacrificial layer; depositing a second layer on each of a portion of the substrate, sacrificial layer and second step that shares a common resistance to removal by a same agent as the substrate, the first step and the second step; removing the second step; removing a portion of the sacrificial layer such that a gap is created between the second layer and the first step, wherein at least a portion of the sacrificial layer remains such that the second layer adhered to the substrate remains; and processing the substrate beneath the gap.
Method Of Fabricating A Patterned Device Using Sacrificial Spacer Layer
View pageUS Patent:
7833828, Nov 16, 2010
Filed:
Apr 22, 2008
Appl. No.:
12/152116
Inventors:
John L. Fitz - Baltimore MD, US
Harris Turk - Baltimore MD, US
Harris Turk - Baltimore MD, US
Assignee:
United States of America as represented by the Director, The National Security Agency - Washington DC
International Classification:
H01L 21/50
H01L 21/48
H01L 21/44
H01L 21/48
H01L 21/44
US Classification:
438106, 438107, 438115
Abstract:
A method of creating a patterned device by selecting a substrate; forming a first step on the substrate; depositing a sacrificial layer along the first step and the substrate; depositing a second step on a portion of the sacrificial layer; depositing a second layer on each of a portion of the substrate, sacrificial layer and second step that shares a common resistance to removal by a same agent as the substrate, the first step and the second step; removing a portion of the sacrificial layer so that a gap is created between the second layer and the first step, wherein a portion of the sacrificial layer remains such that the second layer remains; and processing the substrate beneath the gap created between the second layer and the first step.
Method Of Coating Optical Device Facets With Dielectric Layer And Device Made Therefrom
View pageUS Patent:
20030035453, Feb 20, 2003
Filed:
Aug 17, 2001
Appl. No.:
09/933476
Inventors:
John Fitz - Baltimore MD, US
Daniel Hinkel - Laurel MD, US
Scott Horst - Sykesville MD, US
Harris Turk - Baltimore MD, US
Daniel Hinkel - Laurel MD, US
Scott Horst - Sykesville MD, US
Harris Turk - Baltimore MD, US
International Classification:
H01S005/30
H01L021/00
H01L021/00
US Classification:
372/049000
Abstract:
A method of simultaneously depositing dielectric layers on both facets of an optical device and devices made therefrom. The steps of the method are selecting a substrate; forming an optical device on the substrate; forming an active-layer pumping structure on the optical device; forming facets in the optical device with at least two different orientations; and coating a user-definable number of dielectric layers onto the facets. The dielectric layers may be deposited in single dielectric layers or in pairs of dielectric layers. Single layers are useful for forming optical amplifiers while dielectric pairs are useful for forming lasers.