US Patent:
20020072016, Jun 13, 2002
Inventors:
Haojiang Chen - Cupertino CA, US
James Papanu - San Rafael CA, US
Mark Kawaguchi - San Jose CA, US
Harald Herchen - Los Altos CA, US
Jeng Hwang - Cupertino CA, US
Guangxiang Jin - San Jose CA, US
David Palagashvili - Mountain View CA, US
International Classification:
G03F007/36
US Classification:
430/323000, 430/322000, 216/058000
Abstract:
A method of processing a substrate comprises exposing the substrate to an energized process gas to etch features on the substrate and exposing the substrate to an energized cleaning gas to remove etchant residue and/or remnant resist from the substrate . To enhance the cleaning process, the substrate may be treated before, during or after the cleaning process by exposing the substrate to an energized treating gas comprising a halogen species.