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Haifan R L Liang

from Fremont, CA
Age ~54
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Also known as:
Haifan Koe, Haifan Stirewalt, Liang Haifan, Barry Ferris
Phone and address:
34437 Calgary Ter, Fremont, CA 94555
(510) 745-7084
Related to:
Liang Haining, 52
Connected to:
Anita G Liang, 33Anshi Liang, 47Baihan Liang, 57Becky Liang, 56Cathy Y Liang, 47Ching T Liang, 43Chuan U Liang, 37Connie L Liang, 45Daisy Liang, 29Daniel C Liang, 37

Haifan Liang Phones & Addresses

  • 34437 Calgary Ter, Fremont, CA 94555 (510) 745-7084
  • Draper, UT
  • Oakland, CA
  • Santa Clara, CA
  • Sandy, UT
  • Alameda, CA

Work

Company: Intermolecular Jan 2011 Position: Senior mts/cigs process manager

Education

Degree: Ph. D. School / High School: Harvard University 1992 to 1998 Specialities: Applied Physics

Skills

Characterization • Thin Films • R&D • Cvd • Semiconductors • Materials Science • Design of Experiments • Failure Analysis • Process Simulation • Pvd • Silicon • Photovoltaics • Powder X Ray Diffraction • Sputtering • Jmp • Physics • Mathematics • Solar • Semiconductor Manufacturing • Device Physics • Process Development • Doe • Xrd • Technology • Energy Harvesting

Industries

Renewables & Environment

Resumes

Resumes

Haifan Liang Photo 1

Vice President Of Technology

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Location:
San Francisco, CA
Industry:
Renewables & Environment
Work:
Intermolecular since Jan 2011
Senior MTS/CIGS Process Manager
Solyndra Inc. Jun 2008 - Jan 2011
Engineering Manager
Lam Research Oct 2006 - Jun 2008
Staff Process Engineer
Applied Materials Dec 1997 - Oct 2006
Senior Process Engineer
Education:
Harvard University 1992 - 1998
Ph. D., Applied Physics Princeton University 1988 - 1992
B.A., Physics
Skills:
Characterization
Thin Films
R&D
Cvd
Semiconductors
Materials Science
Design of Experiments
Failure Analysis
Process Simulation
Pvd
Silicon
Photovoltaics
Powder X Ray Diffraction
Sputtering
Jmp
Physics
Mathematics
Solar
Semiconductor Manufacturing
Device Physics
Process Development
Doe
Xrd
Technology
Energy Harvesting

Business Records

Name / Title
Company / Classification
Phones & Addresses
Haifan Liang
Engineer
Applied Materials, Inc
Mfg Misc Industry Machinery
974 E Arques Ave, Sunnyvale, CA 94085
(408) 727-5555, (408) 830-9703, (408) 584-6789

Publications

Us Patents

Gate Electrode Dopant Activation Method For Semiconductor Manufacturing Including A Laser Anneal

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US Patent:
7078302, Jul 18, 2006
Filed:
Feb 23, 2004
Appl. No.:
10/784904
Inventors:
Yi Ma - Santa Clara CA, US
Khaled Z. Ahmed - Anaheim CA, US
Kevin L. Cunningham - Mountain View CA, US
Robert C. McIntosh - San Jose CA, US
Abhilash J. Mayur - Salinas CA, US
Haifan Liang - Oakland CA, US
Mark Yam - Monte Sereno CA, US
Toi Yue Becky Leung - Sunnyvale CA, US
Christopher Olsen - Fremont CA, US
Shulin Wang - Campbell CA, US
Majeed Foad - Sunnyvale CA, US
Gary Eugene Miner - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/336
H01L 21/22
H01L 21/38
H01L 21/3205
H01L 21/4763
US Classification:
438299, 438308, 438530, 438585
Abstract:
In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

Absorber Layer For Dsa Processing

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US Patent:
7109087, Sep 19, 2006
Filed:
Oct 3, 2003
Appl. No.:
10/679189
Inventors:
Luc Van Autryve - Mennecy, FR
Chris D. Bencher - San Jose CA, US
Dean Jennings - Beverly MA, US
Haifan Liang - Oakland CA, US
Abhilash J. Mayur - Salinas CA, US
Mark Yam - Monte Sereno CA, US
Wendy H. Yeh - Mountain View CA, US
Richard A. Brough - Wingdale NY, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/336
H01L 21/425
H01L 21/26
US Classification:
438308, 483514, 483535, 483542
Abstract:
A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.

Dual Wavelength Thermal Flux Laser Anneal

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US Patent:
7279721, Oct 9, 2007
Filed:
Apr 13, 2005
Appl. No.:
11/105270
Inventors:
Dean Jennings - Beverly MA, US
Haifan Liang - Fremont CA, US
Mark Yam - Monte Sereno CA, US
Vijay Parihar - Fremont CA, US
Abhilash Mayur - Salinas CA, US
Aaron Hunter - Santa Cruz CA, US
Bruce Adams - Portland OR, US
Joseph Michael Ranish - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 33/00
US Classification:
257 98, 257288, 257428, 257E21134, 257E21347, 257E21333, 257E21475
Abstract:
A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10. 6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Method Of Laser Annealing Using Two Wavelengths Of Radiation

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US Patent:
7595208, Sep 29, 2009
Filed:
Aug 10, 2007
Appl. No.:
11/837055
Inventors:
Dean Jennings - Beverly MA, US
Haifan Liang - Draper UT, US
Mark Yam - Monte Sereno CA, US
Vijay Parihar - Fremont CA, US
Abhilash Mayur - Salinas CA, US
Aaron Hunter - Santa Cruz CA, US
Bruce Adams - Portland OR, US
Joseph Michael Ranish - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438 31, 257E21134, 257E21347, 257E21333, 257E21475
Abstract:
A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10. 6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Gate Electrode Dopant Activation Method For Semiconductor Manufacturing

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US Patent:
7611976, Nov 3, 2009
Filed:
Jul 5, 2006
Appl. No.:
11/428758
Inventors:
Yi Ma - Santa Clara CA, US
Khaled Z. Ahmed - Anaheim CA, US
Kevin L. Cunningham - Mountain View CA, US
Robert C. McIntosh - San Jose CA, US
Abhilash J. Mayur - Salinas CA, US
Haifan Liang - Oakland CA, US
Mark Yam - Monte Sereno CA, US
Toi Yue Becky Leung - Sunnyvale CA, US
Christopher Olsen - Fremont CA, US
Shulin Wang - Campbell CA, US
Majeed Foad - Sunnyvale CA, US
Gary Eugene Miner - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/425
US Classification:
438530, 438532, 257E21347
Abstract:
Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×10atoms/cmto about 1×10atoms/cm, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800 C. or higher, such as about 1,000 C. , during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000 C. or greater, such within a range from about 1,050 C. to about 1,400 C.

Method Of Annealing Using Two Wavelengths Of Continuous Wave Laser Radiation

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US Patent:
7772134, Aug 10, 2010
Filed:
Aug 24, 2009
Appl. No.:
12/546522
Inventors:
Dean Jennings - Beverly MA, US
Haifan Liang - Draper UT, US
Mark Yam - Monte Sereno CA, US
Vijay Parihar - Fremont CA, US
Abhilash Mayur - Salinas CA, US
Aaron Hunter - Santa Cruz CA, US
Bruce Adams - Portland OR, US
Joseph Michael Ranish - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438795, 257E21134, 257E21324
Abstract:
A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10. 6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Annealing Apparatus Using Two Wavelengths Of Continuous Wave Laser Radiation

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US Patent:
8242407, Aug 14, 2012
Filed:
Jun 28, 2010
Appl. No.:
12/825200
Inventors:
Dean Jennings - Beverly MA, US
Haifan Liang - Draper UT, US
Mark Yam - Monte Sereno CA, US
Vijay Parihar - Fremont CA, US
Abhilash Mayur - Salinas CA, US
Aaron Hunter - Santa Cruz CA, US
Bruce Adams - Portland OR, US
Joseph Michael Ranish - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B23K 26/067
US Classification:
21912165, 21912176
Abstract:
A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10. 6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Laser Annealing For Thin Film Solar Cells

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US Patent:
8551802, Oct 8, 2013
Filed:
Sep 12, 2011
Appl. No.:
13/204827
Inventors:
Haifan Liang - Fremont CA, US
Jeroen Van Duren - Palo Alto CA, US
Assignee:
Intermolecular, Inc. - San Jose CA
International Classification:
H01L 21/00
US Classification:
438 59, 438 63, 438 87, 438 98, 257E31008
Abstract:
A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.
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Haifan R L Liang from Fremont, CA, age ~54 Get Report