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Guillaume Bouche

from Albany, NY
Age ~52
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Connected to:
Betty L Bouche, 78Hassan Bouche, 53Jeremy K Bouche, 27Katherine Bouche, 75Megan E Bouche, 46Amanda Bouchee, 36Amanda A Bouchelle, 45Howard P Bouchelle, 97Joseph Bouchelle, 64Keith Bouchelion, 60

Guillaume Bouche Phones & Addresses

  • 87 Spring St, Albany, NY 12210
  • Portland, OR
  • Beaverton, OR

Resumes

Resumes

Guillaume Bouche Photo 1

Guillaume Bouche

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Location:
Albany, NY
Industry:
Semiconductors
Work:
Intel Corporation

Globalfoundries Apr 2016 - Aug 2019
Research Engineer
Globalfoundries Jul 2015 - Apr 2016
7Nm Process Integration Feol and Mol and Beol, Smts
Globalfoundries Dec 2012 - Jul 2015
10Nm Pi Senior Member of Technical Staff
Intel Corporation May 2012 - Aug 2012
French Qa Tester
Education:
Mines Paristech 1996 - 2000
Doctorates, Doctor of Philosophy, Philosophy Isae - Ensma 1995
Preparatory School 1992
Skills:
Cmos
Process Integration
Semiconductor Industry
Semiconductors
Mems
Silicon
Ic
Microelectronics
Simulations
R&D
Thin Films
Metrology
Analog
Cvd
Sensors
Materials Science
Characterization
Pecvd
Pvd
Physical Vapor Deposition
Interests:
Poverty Alleviation
Languages:
French
Spanish
English
Guillaume Bouche Photo 2

Senior Member Of Technical Staff

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Location:
Portland, OR
Industry:
Electrical/Electronic Manufacturing
Work:
Maxim Integrated
Senior Member of Technical Staff
Education:
Mines Paristech 1996 - 2000

Publications

Us Patents

Methods Of Contacting The Top Layer Of A Baw Resonator

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US Patent:
7567024, Jul 28, 2009
Filed:
Sep 26, 2007
Appl. No.:
11/862020
Inventors:
Ralph N. Wall - Beaverton OR, US
Guillaume Bouche - Beaverton OR, US
Edward Martin Godshalk - Newberg OR, US
Rick D. Lutz - Portland OR, US
Garth Sundberg - Portland OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H01L 41/08
US Classification:
310365, 310320
Abstract:
Methods of contacting the top layer in a BAW device by depositing a metal layer over the BAW device, patterning the metal layer so that the metal layer extends over and contacts the top electrode layer of the BAW device only at a plurality of spaced apart locations adjacent the periphery of the active resonator area, and has a common region laterally displaced from the top and bottom electrodes and electrically interconnecting the parts of the metal layer extending over and contacting the top electrode of the BAW device at the plurality of spaced apart locations.

Baw Resonator Bi-Layer Top Electrode With Zero Etch Undercut

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US Patent:
7600303, Oct 13, 2009
Filed:
May 25, 2006
Appl. No.:
11/442375
Inventors:
Haim Ben Hamou - Portland OR, US
Ralph N. Wall - Beaverton OR, US
Guillaume Bouche - Portland OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H04R 17/00
C23F 1/00
US Classification:
29 2535, 29594, 29847, 310364, 310365, 216 13
Abstract:
A method of fabricating a BAW piezoelectric resonator, the method comprising the steps of providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer is deposited on a top electrode on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and layered such that the top metal layer completely covers the top and sides of the bottom metal layer.

Method To Control Baw Resonator Top Electrode Edge During Patterning

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US Patent:
7612488, Nov 3, 2009
Filed:
Jan 16, 2007
Appl. No.:
11/654244
Inventors:
Guillaume Bouche - Portland OR, US
Ralph N. Wall - Beaverton OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H01L 41/06
US Classification:
310364, 310320, 310365
Abstract:
A piezoelectric resonator include a multi-layer top electrode. The multi-layer top electrode includes at least a top metal layer and a bottom metal layer. A top metal layer edge is recessed compared to a bottom metal layer edge allowing conformal deposition of a passivation layer. The passivation layer covers and protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top electrode. In some embodiments, the multi-layer top electrode is configured as a bi-layer. In other embodiments, an extra layer is configured between the top metal layer and the bottom metal layer, for example a shunt load layer.

Baw Resonator Filter Bandwidth And Out-Of-Band Frequency Rejection

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US Patent:
7646265, Jan 12, 2010
Filed:
Apr 11, 2007
Appl. No.:
11/734188
Inventors:
Carlton Stuebing - Portland OR, US
Guillaume Bouche - Beaverton OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H03H 9/00
US Classification:
333189, 333133
Abstract:
Embodiments of the present invention provide systems, devices and methods for improving both the bandwidth of a BAW resonator bandpass filter and the suppression of out-of-band frequencies above the passband. In various embodiments of the invention, blocker inductors are located in series between the filter input and the filter output to realize both bandwidth enhancement and improved out-of-band frequency rejection. For example, a first blocker inductor may be located at the input and a second blocker inductor may be located at the output of a BAW resonator bandpass filter.

Bragg Mirror Optimized For Shear Waves

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US Patent:
7684109, Mar 23, 2010
Filed:
Feb 28, 2007
Appl. No.:
11/713461
Inventors:
Ed Godshalk - Newberg OR, US
Guillaume Bouche - Portland OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
G02F 1/33
G02F 1/03
US Classification:
359305, 359245
Abstract:
In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.

Baw Resonator Bi-Layer Top Electrode With Zero Etch Undercut

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US Patent:
7737612, Jun 15, 2010
Filed:
Apr 1, 2008
Appl. No.:
12/080348
Inventors:
Haim Ben Hamou - Portland OR, US
Ralph N. Wall - Beaverton OR, US
Guillaume Bouche - Portland OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H01L 41/08
H01L 41/047
US Classification:
310363, 310320
Abstract:
A piezoelectric resonator includes a multi-layer top electrode configured such that a top most layer protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top-most layer. In one embodiment, the multi-layer top electrode is configured as a bi-layer, so that the upper layer of the bi-layer stack protects all sides of the underlying layer from subsequent etch process steps. In an alternative embodiment, at least the perimeter of a multi-layer top electrode is completely covered with overlapping interconnect metal.

Bulk Acoustic Resonators With Multi-Layer Electrodes

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US Patent:
7768364, Aug 3, 2010
Filed:
Jun 9, 2008
Appl. No.:
12/135431
Inventors:
David Hart - Cornelius OR, US
Sudarsan Uppili - Portland OR, US
Guillaume Bouche - Beaverton OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H03H 9/215
H01L 41/047
US Classification:
333187, 310364
Abstract:
Bulk acoustic resonators with multi-layer electrodes for Bulk Acoustic Wave (BAW) resonator devices. Various electrode combinations are disclosed. The invention provides a better compromise at resonant frequencies from 1800 MHz to 4 GHz in terms of keff2 and resistance than state of the art solutions using either Mo, or a bilayer of Al and W.

Orientation-Dependent Etching Of Deposited Aln For Structural Use And Sacrificial Layers In Mems

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US Patent:
7960200, Jun 14, 2011
Filed:
Apr 24, 2007
Appl. No.:
11/789578
Inventors:
Guillaume Bouche - Beaverton OR, US
Ralph N. Wall - Beaverton OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H01L 21/00
US Classification:
438 52, 257418, 257E21251
Abstract:
In accordance with the present invention, accurate and easily controlled sloped walls may be formed using AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.
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Guillaume Bouche from Albany, NY, age ~52 Get Report