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Gregory Charles Herdt

from Rio Rancho, NM
Age ~62
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Also known as:
Gregory C Herdt, Greg C Herdt, Gregory C Tebot, Gregory C Herot
Related to:
Kyler J Herdt, 35Lori B Williams, 59Patrick S Herdt, 32Walt Forman, 58
Connected to:
Andreas C Herdt, 31Angela L Herdt, 58Christian A Herdt, 46Eric T Herdt, 59Julie A Herdt, 27Kimberly N Herdt, 61Merry B Herdt, 50Roger A Herdt, 59Sandra J Herdt, 76Charles Herdy, 38

Gregory Herdt Phones & Addresses

  • Rio Rancho, NM
  • 7097 S Colwood Pl, Boise, ID 83709 (208) 608-5587
  • 432 Fairbrook Ct, Boise, ID 83706
  • 1056 Serafini Dr, Schenectady, NY 12303
  • Delmar, NY
  • Selkirk, NY
  • Plano, TX
  • Derwood, MD
  • Colton, TX

Publications

Us Patents

Co-Sputter Deposition Of Metal-Doped Chalcogenides

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US Patent:
6890790, May 10, 2005
Filed:
Jun 6, 2002
Appl. No.:
10/164429
Inventors:
Jiutao Li - Boise ID, US
Allen McTeer - Meridian ID, US
Gregory Herdt - Boise ID, US
Trung T. Doan - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L021/00
US Classification:
438 93, 438 95, 438102
Abstract:
The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GeSe) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

Co-Sputter Deposition Of Metal-Doped Chalcogenides

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US Patent:
7202104, Apr 10, 2007
Filed:
Jun 29, 2004
Appl. No.:
10/878060
Inventors:
Jiutao Li - Boise ID, US
Allen McTeer - Meridian ID, US
Gregory Herdt - Boise ID, US
Trung T. Doan - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/00
US Classification:
438 93, 438102
Abstract:
The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GeSe) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

Co-Sputter Deposition Of Metal-Doped Chalcogenides

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US Patent:
7446393, Nov 4, 2008
Filed:
Feb 26, 2007
Appl. No.:
11/710517
Inventors:
Jiutao Li - Boise ID, US
Allen McTeer - Meridian ID, US
Gregory Herdt - Boise ID, US
Trung T. Doan - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 29/20
US Classification:
257616, 257762
Abstract:
The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GeSe) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

Method Of Forming Semiconductor Devices Containing Metal Cap Layers

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US Patent:
7776743, Aug 17, 2010
Filed:
Jul 30, 2008
Appl. No.:
12/182363
Inventors:
Noel Russell - Waterford NY, US
Gregory Herdt - Selkirk NY, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/44
US Classification:
438687, 438686, 257E21586
Abstract:
Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers are generally described herein. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd.

Method Of Forming Semiconductor Devices Containing Metal Cap Layers

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US Patent:
7871929, Jan 18, 2011
Filed:
Feb 11, 2009
Appl. No.:
12/369376
Inventors:
Noel Russell - Waterford NY, US
Gregory Herdt - Selkirk NY, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/44
US Classification:
438687, 438686, 257E21586
Abstract:
Methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments, the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd.

Co-Sputter Deposition Of Metal-Doped Chalcogenides

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US Patent:
7964436, Jun 21, 2011
Filed:
Oct 10, 2008
Appl. No.:
12/249744
Inventors:
Jiutao Li - Boise ID, US
Allen McTeer - Meridian ID, US
Gregory Herdt - Boise ID, US
Trung T. Doan - Boise ID, US
Assignee:
Round Rock Research, LLC - Mt. Kisco NY
International Classification:
H01L 21/00
US Classification:
438 93, 438102
Abstract:
The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GeSe) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

Ultra-Thin Film Formation Using Gas Cluster Ion Beam Processing

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US Patent:
8226835, Jul 24, 2012
Filed:
Mar 6, 2009
Appl. No.:
12/399449
Inventors:
John J. Hautala - Beverly MA, US
Edmund Burke - West Newbury MA, US
Noel Russell - Waterford NY, US
Gregory Herdt - Selkirk NY, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/44
US Classification:
216 18, 216 62, 216 67, 216 87, 216 88, 427523, 427527, 427533, 427535, 438631, 438634, 438689, 438692, 438902
Abstract:
A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.
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Gregory Charles Herdt from Rio Rancho, NM, age ~62 Get Report