Giuseppe Scardera

8148176, Apr 3, 2012

Aug 20, 2009

12/544713

Maxim Kelman - Mountain View CA, US
Giuseppe Scardera - Sunnyvale CA, US

Innovalight, Inc. - Sunnyvale CA

H01L 21/00

438 7, 438 14, 257E2153

A method of distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate is disclosed. The method includes providing the silicon substrate, the silicon substrate configured with the set of lightly doped regions and the set of highly doped regions. The method further includes illuminating the silicon substrate with an electromagnetic radiation source, the electromagnetic radiation source transmitting a wavelength of light above about 1100 nm. The method also includes measuring a wavelength absorption of the set of lightly doped regions and the set of heavily doped regions with a sensor, wherein for any wavelength above about 1100 nm, the percentage absorption of the wavelength in the lightly doped regions is substantially less than the percentage absorption of the wavelength in the heavily doped regions.

8163587, Apr 24, 2012

Jul 21, 2009

12/506811

Giuseppe Scardera - Sunnyvale CA, US
Dmitry Poplavskyy - San Jose CA, US
Michael Burrows - Cupertino CA, US
Sunil Shah - Union City CA, US

Innovalight, Inc. - Sunnyvale CA

H01L 21/22

438 57, 438 94, 438514, 438530, 136261, 257E21135

A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface, and depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents. The method further includes heating the substrate in a baking ambient to a first temperature of between about 200 C. and about 800 C. and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern. The method also includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl, a carrier Ngas, a main Ngas, and a reactive Ogas, wherein a ratio of the carrier Ngas to the reactive Ogas is between about 1:1 to about 1. 5:1, at a second temperature of between about 700 C. and about 1000 C.

8394658, Mar 12, 2013

Sep 21, 2011

13/238252

Giuseppe Scardera - Sunnyvale CA, US
Dmitry Poplavskyy - San Jose CA, US
Michael Burrows - Cupertino CA, US
Sunil Shah - Union City CA, US

Innovalight, Inc. - Sunnyvale CA

H01L 21/22
H01L 20/22

438 57, 438 94, 438514, 438530, 136261, 257E21135

Disclosed are methods of forming multi-doped junctions, which utilize a nanoparticle ink to form an ink pattern on a surface of a substrate. From the ink pattern, a densified film ink pattern can be formed. The disclosed methods may allow in situ controlling of dopant diffusion profiles.

8420517, Apr 16, 2013

Feb 12, 2010

12/656710

Giuseppe Scardera - Sunnyvale CA, US
Shihai Kan - San Jose CA, US
Maxim Kelman - Mountain View CA, US
Dmitry Poplavskyy - San Jose CA, US

Innovalight, Inc. - Sunnyvale CA

H01L 21/22
H01L 21/38

438549, 438548, 438558, 438 75, 438542, 257E27123, 257E27124, 257E27133, 257E25007, 136252, 136261

A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl, a carrier Ngas, a main Ngas, and a reactive Ogas at a second temperature and for a second time period, wherein a PSG layer is formed on the front substrate surface and on the densified film ink pattern; and heating the substrate in a drive-in ambient to a third temperature; wherein a first diffused region with a first sheet resistance is formed under the front substrate surface covered by the densified film ink pattern, and a second diffused region with a second sheet resistance is formed under the front substrate surface not covered with the densified film ink pattern, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.

8513104, Aug 20, 2013

Jun 29, 2011

13/172040

Malcolm Abbott - San Jose CA, US
Maxim Kelman - Mountain View CA, US
Eric Rosenfeld - Sunnyvale CA, US
Elena Rogojina - Los Altos CA, US
Giuseppe Scardera - Sunnyvale CA, US

Innovalight, Inc. - Sunnyvale CA

H01L 21/22
H01L 21/38

438549, 438558, 438563, 438565, 438 57, 257E27124, 257E27125, 257E27126, 257E25007, 136243, 136244, 136252

A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The method also includes exposing the substrate to a set of etchants for a third time period, wherein the front surface PSG layer and the rear surface PSG layer are substantially removed; depositing a front surface SiNlayer and a rear surface SiNlayer; and forming a rear metal contact on the rear surface through the rear surface SiNlayer proximate to the set of patterns.

20100167510, Jul 1, 2010

Nov 25, 2009

12/626198

Maxim Kelman - Mountain View CA, US
Michael Burrows - Cupertino CA, US
Dmitry Poplavskyy - San Jose CA, US
Giuseppe Scardera - Sunnyvale CA, US
Daniel Kray - Freiburg, DE
Elena Rogojina - Los Altos CA, US

H01L 21/22

438544, 977773, 257E21135

A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink comprising a first set of nanoparticles and a first set of solvents, the first set of nanoparticles comprising a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink comprising a second set of nanoparticles and a second set of solvents, the second set of nanoparticles comprising a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period. The method further includes exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient comprising POCl, a carrier Ngas, a main Ngas, and a reactive Ogas for a second time period; and heating the first substrate and the second substrate in a second drive-in ambient to a third temperature for a third time period.

20110003466, Jan 6, 2011

Jun 4, 2010

12/794188

Giuseppe Scardera - Sunnyvale CA, US
Homer Antoniadis - Montalto CA, US
Nick Cravalho - Palo Alto CA, US
Maxim Kelman - Mountain View CA, US
Elena Rogojina - Los Altos CA, US
Karel Vanheusden - Los Altos CA, US

H01L 21/22

438565, 257E21135

A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front crystalline substrate surface; and forming a mask on the front crystalline substrate surface, the mask comprising exposed mask areas and non-exposed mask areas. The method also includes exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; and removing the mask. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POClgas, at a first temperature and for a first time period, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient to a second temperature and for a second time period. Wherein a first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance is formed under the front crystalline substrate surface without the porous silicon, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.

20110183504, Jul 28, 2011

Jan 25, 2010

12/692878

Giuseppe Scardera - Sunnyvale CA, US
Malcolm Abbott - San Jose CA, US
Dmitry Poplavskyy - San Jose CA, US
Sunil Shah - Union City CA, US

H01L 21/225

438558, 257E21144

A method of forming a multi-doped junction is disclosed. The method includes providing a substrate doped with boron atoms, the substrate comprising a front substrate surface. The method also includes depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents; and heating the substrate in a baking ambient at a baking temperature and for a baking time period wherein a densified ink layer is formed. The method further includes exposing the substrate to a phosphorous dopant source at a drive-in temperature and for a drive-in time period.