Geoffrey R Tucker

20200343636, Oct 29, 2020

Apr 2, 2020

16/838671

- Austin TX, US
Geoffrey Tucker - Tempe AZ, US
Martin Beuttner - Toulouse, FR

H01Q 5/335
H01Q 23/00
H01P 3/08
H01P 3/02

Embodiments of a circuit, system, and method are disclosed. In an embodiment, a circuit includes a first microstrip transmission line, a second microstrip transmission line, and a slotline formation, wherein the slotline formation extends between the first microstrip transmission line and the second microstrip transmission line so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit. In addition, the circuit includes at least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, wherein a magnitude of capacitance of the at least one controllable capacitance circuit is controllable (e.g., in response to a capacitance control signal received at a control interface).

20190206759, Jul 4, 2019

Mar 7, 2019

16/295962

- Austin TX, US
Mahesh K. Shah - Scottsdale AZ, US
Lu Li - Gilbert AZ, US
David Abdo - Scdottsdale AZ, US
Geoffrey Tucker - Tempe AZ, US
Carl Emil D'Acosta - Mesa AZ, US
Jaynal A. Molla - Gilbert AZ, US
Justin Eugene Poarch - Gilbert AZ, US
Paul Hart - Phoenix AZ, US

H01L 23/367
H01L 21/48
H01L 23/13
H01L 23/528
H01L 23/00

Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.

20190148138, May 16, 2019

Nov 6, 2018

16/182325

- Austin TX, US
LAKSHMINARAYAN VISWANATHAN - PHOENIX AZ, US
GEOFFREY TUCKER - TEMPE AZ, US

NXP USA, INC. - AUSTIN TX

H01L 21/02
H01L 23/40
H01L 21/60

Microelectronic systems having embedded heat dissipation structures are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the steps or processes of obtaining a substrate having a tunnel formed therethrough, attaching a microelectronic component to a frontside of the substrate at a location covering the tunnel, and producing an embedded heat dissipation structure at least partially within the tunnel after attaching the microelectronic component to the substrate. The step of producing may include application of a bond layer precursor material into the tunnel and onto the microelectronic component from a backside of the substrate. The bond layer precursor material may then be subjected to sintering process or otherwise cured to form a thermally-conductive component bond layer in contact with the microelectronic component.

20190115875, Apr 18, 2019

Sep 28, 2018

16/145809

- Austin TX, US
Geoffrey TUCKER - Tempe AZ, US

H03F 1/30
H03F 3/21
H03F 3/19
H03F 1/02
H05K 1/02
H01P 5/18
H01P 3/08
H01P 3/02

Systems and methods for communicating electromagnetic signals and/or power and, more particularly for example, to power combiners and similar systems and methods for communicating electromagnetic signals and/or power generated by amplifiers to loads, are described herein. In at least example embodiment, a power amplifier system includes first and second amplifier circuits and a power combiner circuit coupled to each of the first and second amplifier circuits and having a first microstrip transmission line component, a slotline formation, and an additional coupling component that is capable of being at least indirectly coupled to a load, where the first microstrip transmission line component and additional coupling component are electromagnetically coupled by way of the slotline formation.

20190098743, Mar 28, 2019

Nov 28, 2018

16/202638

- Austin TX, US
LAKSHMINARAYAN VISWANATHAN - PHOENIX AZ, US
ELIE A. MAALOUF - MESA AZ, US
GEOFFREY TUCKER - TEMPE AZ, US

NXP USA, INC. - AUSTIN TX

H05K 1/02
H01L 23/15
H01L 23/427
H01L 23/373
H05K 7/20
H05K 3/32
H05K 1/18

High thermal performance microelectronic modules containing sinter-bonded heat dissipation structures are provided, as are methods for the fabrication thereof. In various embodiments, the method includes the steps or processes of providing a module substrate, such as a circuit board, including a cavity having metallized sidewalls. A sinter-bonded heat dissipation structure is formed within the cavity. The sintered-bonded heat dissipation structure is formed, at least in part, by inserting a prefabricated thermally-conductive body, such as a metallic (e.g., copper) coin into the cavity. A sinter precursor material (e.g., a metal particle-containing paste) is dispensed or otherwise applied into the cavity and onto surfaces of the prefabricated thermally-conductive body before, after, or concurrent with insertion of the prefabricated thermally-conductive body. The sinter precursor material is then sintered at a maximum processing temperature to produce a sinter bond layer bonding the prefabricated thermally-conductive body to the metallized sidewalls of the module substrate.

20190021162, Jan 17, 2019

Sep 19, 2018

16/135189

- Austin TX, US
ELIE A. MAALOUF - MESA AZ, US
GEOFFREY TUCKER - TEMPE AZ, US

NXP USA, INC. - AUSTIN TX

H05K 1/02
H05K 7/20
H05K 3/32
H05K 1/18
H01L 23/15
H01L 23/373
H01L 23/427

Methods for producing high thermal performance microelectronic modules containing sinter-bonded heat dissipation structures. In one embodiment, the method includes embedding a sinter-bonded heat dissipation structure in a module substrate. The step of embedding may entail applying a sinter precursor material containing metal particles into a cavity provided in the module substrate, and subsequently sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate. A microelectronic device and a heatsink are then attached to the module substrate before, after, or concurrent with sintering such that the heatsink is thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure. In certain embodiments, the microelectronic device may be bonded to the module substrate at a location overlying the thermally-conductive structure.

20180153030, May 31, 2018

Nov 29, 2016

15/363671

- AUSTIN TX, US
ELIE A. MAALOUF - MESA AZ, US
GEOFFREY TUCKER - TEMPE AZ, US

NXP USA, INC. - AUSTIN TX

H05K 1/02
H05K 1/18
H05K 7/20
H05K 3/32

Methods for producing high thermal performance microelectronic modules containing sinter-bonded heat dissipation structures. In one embodiment, the method includes embedding a sinter-bonded heat dissipation structure in a module substrate. The step of embedding may entail applying a sinter precursor material containing metal particles into a cavity provided in the module substrate, and subsequently sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate. A microelectronic device and a heatsink are then attached to the module substrate before, after, or concurrent with sintering such that the heatsink is thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure. In certain embodiments, the microelectronic device may be bonded to the module substrate at a location overlying the thermally-conductive structure.

20150155838, Jun 4, 2015

Dec 3, 2013

14/095814

Ramanujam Srinidhi Embar - Chandler AZ, US
Joseph Staudinger - Gilbert AZ, US
Geoffrey G. Tucker - Tempe AZ, US

Freescale Semiconductor, Inc. - Austin TX

H03F 1/56
H03F 3/19
H03F 3/21

A device includes a Doherty amplifier having a carrier path and a peaking path. The Doherty amplifier includes a carrier amplifier configured to amplify a signal received from the carrier path and a peaking amplifier configured to amplify a signal received from the peaking path. The device includes a variable impedance coupled to an output of the Doherty amplifier, and a controller configured to set the variable impedance to a first impedance when an output power level of the Doherty amplifier is less than a threshold and to a second impedance when the output power level of the Doherty amplifier is above the threshold.