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Emmanuel A Valsamakis

from Ellicott City, MD
Deceased
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Also known as:
Emanuel A Valsamakis, Emma Valsamakis, Alva Knowles Allen, Alva K Mcneal, Alva K Allen, Ak Allen, Emmanuel S
Related to:
Marcus D Mcneal, 81Alexandra ValsamakisMaurice McnealMaurice Mcneil, 42Cynthia Mccants, 70Brentt V Neal, 38
Connected to:
Fulvio A Valsangiacomo, 54Marco Valsania, 62Elsa B Valsdottir, 54Emilio P Valsecchi, 57Peter J Valsler, 64Jeronne Valssaint, 42Andrew L Valstad, 31Michael D Valt, 70George P Valtadoros, 45Renee M Valtakis, 52

Emmanuel Valsamakis Phones & Addresses

  • Ellicott City, MD
  • 14 Hilltop Rd, Yorktown Heights, NY 10598 (914) 245-5309
  • 2685 Hilltop Rd, Yorktown Heights, NY 10598 (914) 245-5309
  • Philadelphia, PA
  • Rialto, CA
  • Hiram, GA
  • Yorktown Hts, NY
  • Carson, CA

Publications

Us Patents

Method For Contacting A Narrow Width Pn Junction Region

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US Patent:
45071713, Mar 26, 1985
Filed:
Aug 6, 1982
Appl. No.:
6/405844
Inventors:
Harsaran S. Bhatia - Wappingers Falls NY
Satyapal S. Bhatia - Wappingers Falls NY
Jacob Riseman - Poughkeepsie NY
Emmanuel A. Valsamakis - Yorktown Heights NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21306
H01L 744
B44C 122
B05D 512
US Classification:
156643
Abstract:
A method for making contact to a narrow width PN junction region in any desired semiconductor body is described. A substantially vertical conformal conductive layer is formed over the desired PN junction region. The body is heated at a suitable temperature to cause a dopant to diffuse from the vertical conductive layer into the semiconductor body to form the narrow width PN junction region. A substantially horizontal conductive layer makes contact to the substantially vertical layer so as to have the horizontal conductive layer in electrical contact to the PN junction region. Electrical contact can be made to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of very small device that can be made using the method of the present invention.

Structure For Contacting A Narrow Width Pn Junction Region

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US Patent:
47121254, Dec 8, 1987
Filed:
Oct 18, 1984
Appl. No.:
6/661999
Inventors:
Harsaran S. Bhatia - Wappingers Falls NY
Satyapal S. Bhatia - Wappingers Falls NY
Jacob Riseman - Poughkeepsie NY
Emmanuel A. Valsamakis - Yorktown Heights NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2904
US Classification:
357 59
Abstract:
A method and resulting structure for making contact to a narrow width PN junction region in any desired semiconductor body is described. A substantially vertical conformal conductive layer is formed over the desired PN junction region. The body is heated at a suitable temperature to cause a dopant to diffuse from the vertical conductive layer into the semiconductor body to form the narrow width PN junction region. A substantially horizontal conductive layer makes contact to the substantially vertical layer so as to have the horizontal conductive layer in electrical contact to the PN junction region. Electrical contact can be made to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of very small device that can be made using the method of the present invention.
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Emmanuel A Valsamakis from Ellicott City, MDDeceased Get Report