Eberhard A Spiller

6780496, Aug 24, 2004

Feb 1, 2002

10/066108

Sasa Bajt - Livermore CA
James A. Folta - Livermore CA
Eberhard A. Spiller - Livermore CA

EUV LLC - Santa Clara CA

B32B 702

428216, 428336, 428408, 428457, 428615, 428641, 428649, 428663

A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.

7672430, Mar 2, 2010

May 15, 2008

12/121177

Henry N. Chapman - Livermore CA, US
Sasa Bajt - Livermore CA, US
Eberhard A. Spiller - Livermore CA, US
Stefan Hau-Riege - Fremont CA, US
Stefano Marchesini - Oakland CA, US

Lawrence Livermore National Security, LLC - Livermore CA

G01N 23/20

378 71, 378 87, 378145

A system in one embodiment includes a source for directing a beam of radiation at a sample; a multilayer mirror having a face oriented at an angle of less than 90 degrees from an axis of the beam from the source, the mirror reflecting at least a portion of the radiation after the beam encounters a sample; and a pixellated detector for detecting radiation reflected by the mirror. A method in a further embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample; not reflecting at least a majority of the radiation that is not diffracted by the sample; and detecting at least some of the reflected radiation. A method in yet another embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample using a multilayer mirror; and detecting at least some of the reflected radiation.

20030164998, Sep 4, 2003

Mar 1, 2002

10/086614

Paul Mirkarimi - Sunol CA, US
Eberhard Spiller - Livermore CA, US
Daniel Stearns - Los Altos CA, US

The Regents of the University of California

B05D005/06
C23C014/32

359/237000, 427/162000, 427/551000, 204/192340, 204/192110

An ion-assisted deposition technique to provide planarization of topological defects, e.g., to mitigate the effects of small particle contaminants on reticles for extreme ultraviolet (EUV) lithography. Reticles for EUV lithography will be fabricated by depositing high EUV reflectance Mo/Si multilayer films on superpolished substrates and topological substrate defects can nucleate unacceptable (“critical”) defects in the reflective Mo/Si coatings. A secondary ion source is used to etch the Si layers in between etch steps to produce topological defects with heights that are harmless to the lithographic process.

20050118533, Jun 2, 2005

Oct 12, 2004

10/964048

Paul Mirkarimi - Sunol CA, US
Sherry Baker - Pleasanton CA, US
Daniel Stearns - Los Alto Hills CA, US
Eberhard Spiller - Livermore CA, US

G03F007/36

430316000, 430005000, 430313000

Ion-beam based deposition technique are provided for the planarization of pit and scratch defects in conjunction with particle defects. One application of this planarization technique is to mitigate the effects of pits and scratches and particles on reticles for extreme ultraviolet (EUV) lithography. In the planarization process, thin Si layers are successively deposited and etched away where the etching is directed at angles well away from normal incidence to the substrate to planarize pits and scratches without causing the particle defects to get too large; this is followed by a normal incidence etching process sequence designed primarily to planarize the particles but which will also planarize the pits and scratches to completion. The process also shows significant promise for planarizing substrate roughness.

39845826, Oct 5, 1976

Jun 30, 1975

5/591980

Ralph Feder - Hyde Park NY
Ivan Haller - Chappaqua NY
Michael Hatzakis - Ossining NY
Lubomyr T. Romankiw - Briarcliff Manor NY
Eberhard A. Spiller - Mount Kisco NY

IBM - Armonk NY

B05D 306

427 43

A positive resist image is produced by exposing, to radiation in a predetermined pattern, a polymeric material containing polymerized alkyl methacrylate units and polymerized monoethylenically unsaturated acid units. The exposed and unexposed areas are distinguished by their different respective abilities to be swelled in an appropriate swelling agent, and the swelled areas are removed by dispersal in a nonsolvent liquid.

61340499, Oct 17, 2000

Sep 25, 1998

9/160264

Eberhard A. Spiller - Mount Kisco NY
Paul B. Mirkarimi - Sunol CA
Claude Montcalm - Livermore CA
Sasa Bajt - Sunol CA
James A. Folta - Livermore CA

The Regents of the University of California - Oakland CA

G02B 528
G02B 110
F21V 904

359590

Stress compensating systems that reduces/compensates stress in a multilayer without loss in reflectivity, while reducing total film thickness compared to the earlier buffer-layer approach. The stress free multilayer systems contain multilayer systems with two different material combinations of opposite stress, where both systems give good reflectivity at the design wavelengths. The main advantage of the multilayer system design is that stress reduction does not require the deposition of any additional layers, as in the buffer layer approach. If the optical performance of the two systems at the design wavelength differ, the system with the poorer performance is deposited first, and then the system with better performance last, thus forming the top of the multilayer system. The components for the stress reducing layer are chosen among materials that have opposite stress to that of the preferred multilayer reflecting stack and simultaneously have optical constants that allow one to get good reflectivity at the design wavelength. For a wavelength of 13.

40189384, Apr 19, 1977

Jun 30, 1975

5/591986

Ralph Feder - Hyde Park NY
Eberhard A. Spiller - Mount Kisco NY

International Business Machines Corporation - Yorktown Heights NY

B05D 306

427 43

A method of constructing masks characterized by a high aspect ratio. The method includes at least a single exposure of a mask by radiation which is transmitted by the substrate before impinging on the resist. In a specific embodiment the mask is partially completed and the already deposited mask modulates the radiation transmitted by the substrate before it exposes the resist.