Donald W Rakowski

6506653, Jan 14, 2003

Mar 13, 2000

09/524677

Toshiharu Furukawa - Essex Junction VT
Mark C. Hakey - Fairfax VT
Steven J. Holmes - Milton VT
David V. Horak - Essex Junction VT
William H-L Ma - Fishkill NY
Patricia M. Marmillion - Colchester VT
Donald W. Rakowski - Milton VT

International Business Machines Corporation - Armonk NY

H01L 21336

438305, 438301, 438302, 438559, 438563

Methods are provided that use disposable and permanent films to dope underlying layers through diffusion. Additionally, methods are provided that use disposable films during implantation doping and that provide a surface from which to dope underlying materials. Some of these disposable films can be created from a traditionally non-disposable film and made disposable. In this manner, solvents may be used that do not etch underlying layers of silicon-based materials. Preferably, deep implantation is performed to form source/drain regions, then an anneal step is performed to activate the dopants. A conformal layer is deposited and implanted with dopants. One or more anneal steps are performed to create very shallow extensions in the source/drain regions.

6514840, Feb 4, 2003

Apr 13, 1999

09/290932

Howard Ted Barrett - Starksboro VT
Toshiharu Furukawa - Essex Junction VT
Donald W. Rakowski - Milton VT
James Albert Slinkman - Montpelier VT

International Business Machines Corporation - Armonk NY

H01L 21324

438530, 438798

A method for selectively heating a substrate without damaging surrounding regions of the substrate. In particular, the invention provides for a method of selectively activating doped regions of a semiconductor device without damaging surrounding doped and activated regions. Specifically, the invention provides a laser anneal which activates locally doped regions, while surrounding doped and activated regions are protected using a reflective mask.

6559462, May 6, 2003

Oct 31, 2000

09/702348

Nicole Susan Carpenter - Burlington VT
Robert E. Fields - Colchester VT
Nicholas Mone, Jr. - Essex Junction VT
Gary Michael Prescott - Essex Junction VT
Donald Walter Rakowski - Milton VT
Richard S. Ray - Williston VT

International Business Machines Corporation - Armonk NY

H01J 37317

25049221, 250423 R, 31511181

The operating lifetime of a hot cathode discharge ion source is extended by introducing nitrogen into an ion implantation apparatus after introduction of an ion implantation gas, such as GeF , is stopped. The nitrogen is preferably introduced along with the GeF during implantation as well.

6670624, Dec 30, 2003

Mar 7, 2003

10/248996

Edward D. Adams - Richmond VT
Nicholas Mone, Jr. - Essex Junction VT
Donald W. Rakowski - Milton VT
Richard S. Ray - Williston VT

International Business Machines Corporation - Armonk NY

B01D 5944

25049221, 250306, 250307, 250309, 2505051, 250227, 250281, 250282, 250423 R, 2504921, 2504922, 2504923

An apparatus for the in-situ detection of ions in a beam of an ion implanter device includes a mass spectrometer device having inner and outer walls and, a system for generating and directing an ion implant beam through the mass spectrometer device. The mass spectrometer device generates a magnetic field for directing ions of the ion implant beam of a desirable type through an aperture for implanting into a semiconductor wafer, and causing ions of undesirable type to collide with the inner or outer wall. For in-situ detection, a detector device is disposed on the inner and outer walls of the mass spectrometer for detecting the undesirable type of ions deflected. In one embodiment, the detector device comprises electronic sensor devices for detecting a concentration of the undesirable type ions which comprise undesirable elements and compounds. In another embodiment, the detector device comprises Faraday cup devices for detecting a concentration of ions of the undesirable type, or, may comprise a moving Faraday device positioned along tracks disposed respectively along the inner and outer wall, the Faraday being driven for reciprocal movement along a respective track. Data is collected from the sensors corresponding to the positions of undesirable ion detection and is processed, in real-time, during wafer processing.

6924200, Aug 2, 2005

Aug 16, 2002

10/222035

Toshiharu Furukawa - Essex Junction VT, US
Mark C. Hakey - Fairfax VT, US
Steven J. Holmes - Milton VT, US
David V. Horak - Essex Junction VT, US
William H-L Ma - Fishkill NY, US
Patricia M. Marmillion - Colchester VT, US
Donald W. Rakowski - Milton VT, US

International Business Machines Corporation - Armonk NY

H01L021/336
H01L021/21
H01L021/302

438305, 438301, 438558, 438563, 438752

Methods are provided that use disposable and permanent films to dope underlying layers through diffusion. Additionally, methods are provided that use disposable films during implantation doping and that provide a surface from which to dope underlying materials. Some of these disposable films can be created from a traditionally non-disposable film and made disposable. In this manner, solvents may be used that do not etch underlying layers of silicon-based materials. Preferably, deep implantation is performed to form source/drain regions, then an anneal step is performed to activate the dopants. A conformal layer is deposited and implanted with dopants. One or more anneal steps are performed to create very shallow extensions in the source/drain regions.

20020117637, Aug 29, 2002

Feb 28, 2001

09/796194

Gary Donaldson - Hinesburg VT, US
Donald Rakowski - Milton VT, US
Nick Selva - Essex Junction VT, US

International Business machines Corporation - Armonk NY

G21K005/10
H01J037/08

250/492210

An ion generator chamber, for an implantation apparatus, having its interior walls surfaces knurled or roughened so that any of the materials used in the chamber cannot deposit onto the interior wall surfaces in a size sufficiently large enough to adversely affect the operation of the chamber, if the deposits peel off the interior walls of the chamber. By limiting the size of any deposits on interior chamber walls, the invention extends the average life of the filaments used in the chamber as well as extending the average time between any necessary cleaning of the inner chamber walls thereby extending the operating life of the chamber.

63332450, Dec 25, 2001

Dec 21, 1999

9/469137

Toshiharu Furukawa - Essex Junction VT
Mark C. Hakey - Fairfax VT
Steven J. Holmes - Milton VT
David V. Horak - Essex Junction VT
William H. Ma - Fishkill NY
Donald W. Rakowski - Milton VT

International Business Machines Corporation - Armonk NJ

H01L 2122

438542

A method for introducing dopants into a semiconductor device using doped germanium oxide is disclosed. The method includes using rapid thermal anneal (RTA) or furnace anneal to diffuse dopants into a substrate from a doped germanium oxide sacrificial layer on the semiconductor substrate. After annealing to diffuse the dopants into the substrate, the germanium oxide sacrificial layers is removed using water thereby avoiding removal of silicon dioxide (SiO. sub. 2) in the gates or in standard device isolation structures, that may lead to device failure. N+ and p+ sources and drains can be formed in appropriate wells in a semiconductor substrate, using a singular anneal and without the need to define more than one region of the first doped sacrificial layer. Alternatively, annealing before introducing a second dopant into the germanium oxide sacrificial layer give slower diffusing ions such as arsenic a head start.