20110227147, Sep 22, 2011
Tiesheng Li - San Jose CA,
Michael R. Hsing - Saratoga CA,
Deming Xiao - San Jose CA,
257329, 438268, 257339, 257E2141, 257E29257
RESURF effect devices with both relatively deep trenches and relatively deep implants are described herein. Also, methods of fabricating such devices are described herein. A RESURF effect device may include alternating regions of first and second conductivity types where each of the second regions includes an implant region formed into a trench region of the second region.