Resumes
Resumes
David Wanlass Phones & Addresses
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Campbell, CA
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3040 E Charleston Blvd APT 1052, Las Vegas, NV 89104
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San Jose, CA
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Davis, CA
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Santa Clara, CA
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General Delivery, Campbell, CA 95008
Publications
Us Patents
Method Of Manufacture Of An Epitaxial Semiconductor Layer On An Insulating Substrate
View pageUS Patent:
39973816, Dec 14, 1976
Filed:
Jan 10, 1975
Appl. No.:
5/540010
Inventors:
David R. Wanlass - Mountain View CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 750
US Classification:
156 3
Abstract:
A thin epitaxial layer of silicon is disposed on a supporting silicon substrate and a silicon oxide layer or other suitable layer is formed on the epitaxial layer. The substrate, epitaxial layer and oxide layer sandwich is bonded by the simultaneous application of heat and voltaic pressure to another oxidized substrate such that the epitaxial layer is sandwiched between the two substrates with the oxide layer at the sandwich interface. Alternatively, the substrates may be joined by bonding without the use of voltaic pressure by placing the substrates (parent and supporting) at approximately 900. degree. C. The substrates with the epitaxial layer is processed to remove a substantial portion of the silicon substrate with the final portion being removed by etching. When the final portion of the silicon substrate is removed by etching, exposing the epitaxial silicon layer, the etching rate changes dramatically and this is reflected in the byproduct concentration in the etchant solution. The etching process is immediately terminated when the epitaxial layer is fully exposed.