Resumes
Resumes
David Mordo Phones & Addresses
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20644 Acadia Ct, Cupertino, CA 95014 (408) 802-7403
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10212 Portal Ave, Cupertino, CA 95014
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San Diego, CA
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San Jose, CA
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Seattle, WA
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Santa Clara, CA
Business Records
Name / Title
Company / Classification
Phones & Addresses
Director Of Technology Dielec
Lam Research Corporation
Mfg Misc Industry Machinery
Mfg Misc Industry Machinery
3960 N 1 St, San Jose, CA 95134
(408) 943-9700
(408) 943-9700
Mordo Assets Management, LLC
Asset Management
Asset Management
20644 Acadia Ct, Cupertino, CA 95014
President
ADASHIM INTERNATIONAL CORP
Investment Advisory Service
Investment Advisory Service
20644 Acadia Ct, Cupertino, CA 95014
Publications
Us Patents
Methods For Producing Low Stress Porous Low-K Dielectric Materials Using Precursors With Organic Functional Groups
View pageUS Patent:
7241704, Jul 10, 2007
Filed:
Aug 27, 2004
Appl. No.:
10/927777
Inventors:
Qingguo Wu - Tualatin OR, US
Haiying Fu - West Linn OR, US
David C. Smith - Lake Oswego OR, US
David Mordo - Cupertino CA, US
Haiying Fu - West Linn OR, US
David C. Smith - Lake Oswego OR, US
David Mordo - Cupertino CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
C23C 16/40
C23C 16/56
H01L 21/469
C23C 16/40
C23C 16/56
US Classification:
438781, 438789, 438790, 427557
Abstract:
Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.
Method To Improve Mechanical Strength Of Low-K Dielectric Film Using Modulated Uv Exposure
View pageUS Patent:
7253125, Aug 7, 2007
Filed:
Apr 16, 2004
Appl. No.:
10/825888
Inventors:
Ananda K. Bandyopadhyay - West Linn OR, US
Haiying Fu - West Linn OR, US
Easwar Srinivasan - Beaverton OR, US
David Mordo - Cupertino CA, US
Haiying Fu - West Linn OR, US
Easwar Srinivasan - Beaverton OR, US
David Mordo - Cupertino CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/00
US Classification:
438795, 257E21347
Abstract:
Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.
Method And Apparatus For Uv Exposure Of Low Dielectric Constant Materials For Porogen Removal And Improved Mechanical Properties
View pageUS Patent:
7265061, Sep 4, 2007
Filed:
Mar 11, 2004
Appl. No.:
10/800377
Inventors:
Easwar Srinivasan - Beaverton OR, US
Brian G. Lu - Fremont CA, US
David Mordo - Cupertino CA, US
Brian G. Lu - Fremont CA, US
David Mordo - Cupertino CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
US Classification:
438764, 438781
Abstract:
Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric matrix and further exposing the dielectric matrix to ultraviolet radiation to increase the mechanical strength of the dielectric matrix. Some methods involve activating a gas to create reactive gas species that can clean a reaction chamber. One disclosed apparatus includes an array of multiple ultraviolet sources that can be controlled such that different wavelengths of light can be used to irradiate a sample at a time.
Methods For Producing Low Stress Porous Low-K Dielectric Materials Using Precursors With Organic Functional Groups
View pageUS Patent:
7473653, Jan 6, 2009
Filed:
Jun 18, 2007
Appl. No.:
11/764750
Inventors:
Qingguo Wu - Tualatin OR, US
Haiying Fu - West Linn OR, US
David C. Smith - Lake Oswego CA, US
David Mordo - Cupertino CA, US
Haiying Fu - West Linn OR, US
David C. Smith - Lake Oswego CA, US
David Mordo - Cupertino CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
C23C 16/40
C23C 16/56
H01L 21/469
C23C 16/40
C23C 16/56
US Classification:
438781, 438789, 438790, 427557
Abstract:
Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.
Method To Improve Mechanical Strength Of Low-K Dielectric Film Using Modulated Uv Exposure
View pageUS Patent:
7611757, Nov 3, 2009
Filed:
Jun 28, 2007
Appl. No.:
11/824049
Inventors:
Ananda K. Bandyopadhyay - West Linn OR, US
Haiying Fu - West Linn OR, US
Easwar Srinivasan - Beaverton OR, US
David Mordo - Cupertino CA, US
Haiying Fu - West Linn OR, US
Easwar Srinivasan - Beaverton OR, US
David Mordo - Cupertino CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
B05D 3/06
B05D 3/02
C23C 16/00
B05D 3/02
C23C 16/00
US Classification:
427558, 4272491, 4273722
Abstract:
Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.
Method For Improving Mechanical Properties Of Low Dielectric Constant Materials
View pageUS Patent:
7622400, Nov 24, 2009
Filed:
May 18, 2004
Appl. No.:
10/849568
Inventors:
Keith Fox - Portland OR, US
Easwar Srinivasan - Beaverton OR, US
David Mordo - Cupertino CA, US
Qingguo Wu - Tualatin OR, US
Easwar Srinivasan - Beaverton OR, US
David Mordo - Cupertino CA, US
Qingguo Wu - Tualatin OR, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
H01L 21/469
US Classification:
438784, 438761, 438788, 257E21276, 257E21277
Abstract:
Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of depositing and plasma treating the sub-layers is repeated until a desired thickness has been reached.
Methods For Producing Low-K Carbon Doped Oxide Films With Low Residual Stress
View pageUS Patent:
7781351, Aug 24, 2010
Filed:
Apr 7, 2004
Appl. No.:
10/820525
Inventors:
Qingguo Wu - Tualatin OR, US
Haiying Fu - West Linn OR, US
Dong Niu - Tualatin OR, US
Ananda K. Bandyopadhyay - West Linn OR, US
David Mordo - Cupertino CA, US
Haiying Fu - West Linn OR, US
Dong Niu - Tualatin OR, US
Ananda K. Bandyopadhyay - West Linn OR, US
David Mordo - Cupertino CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
US Classification:
438789, 438788, 438790, 257E21277
Abstract:
Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to multiple organic precursors including at least one organosilicon and at least one unsaturated C—C bond are provided. The methods may also involve igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components with a high percentage of the low frequency component, and depositing the carbon doped dielectric layer under conditions in which the resulting dielectric layer has a residual stress of not greater than, e. g. , about 50 MPa, and a dielectric constant not greater than about 3.
Methods For Producing Low Stress Porous Low-K Dielectric Materials Using Precursors With Organic Functional Groups
View pageUS Patent:
7799705, Sep 21, 2010
Filed:
Jan 5, 2009
Appl. No.:
12/348791
Inventors:
Qingguo Wu - Tualatin OR, US
Haiying Fu - West Linn OR, US
David C. Smith - Lake Oswego OR, US
David Mordo - Cupertino CA, US
Haiying Fu - West Linn OR, US
David C. Smith - Lake Oswego OR, US
David Mordo - Cupertino CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
C23C 16/40
C23C 16/56
H01L 21/469
C23C 16/40
C23C 16/56
US Classification:
438781, 438789, 438790, 427557
Abstract:
Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.