Inventors:
David N. Beratan - South Pasadena CA
Jose N. Onuchic - Sao Carlos, BR
Assignee:
The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC
International Classification:
H01L 2928
Abstract:
An electronic shift register memory (20) at the molecular level is described. The memory elements are based on a chain of electron transfer molecules (22) and the information is shifted by photoinduced (26) electron transfer reactions. Thus, multi-step sequences of charge transfer reactions are used to move charge with high efficiency down a molecular chain. The device integrates compositions of the invention onto a VLSI substrate (36), providing an example of a "molecular electronic device" which may be fabricated. Three energy level schemes, molecular implementation of these schemes, optical excitation strategies, charge amplification strategies, and error correction strategies are described.