Daniel M Boyne

6597067, Jul 22, 2003

Apr 17, 1997

08/839843

Glenn Allen Biery - Poughkeepsie NY
Daniel Mark Boyne - Austin TX
Hormazdyar Minocher Dalal - Milton NY
H. Daniel Schnurmann - Monsey NY

International Business Machines Corporation - Armonk NY

H01L 2348

257751, 257700, 257701, 257758, 257750, 257915, 257774, 257766, 257763, 257764, 257765, 257761

An interconnection wiring structure in an integrated circuit chip designed to eliminate electromigration. The structure includes segments of aluminum interspersed with segments of refractory metal, wherein each aluminum segment is followed by a segment of refractory metal. The aluminum and refractory metal segments are aligned with respect to each other to ensure electrical continuity and to force the electrical current to sequentially cross the aluminum and the refractory metal segments. The above structure can be advantageously enhanced by adding an underlayer, an overlayer or both, all of which are made of refractory metal. The interconnection wire structure described above can be expanded to include vias or studs linking interconnection lines placed at different levels of the IC chip.

20130330846, Dec 12, 2013

Jun 12, 2012

13/494160

Jinbang Tang - Chandler AZ, US
Daniel M. Boyne - Austin TX, US

H01L 21/66
G01R 31/26

438 15, 32475601, 257E21531

A mechanism to electrically evaluate signals within an encapsulated semiconductor device package without the need for redesigning the package substrate is provided. Test bond pads are provided on a top surface of a semiconductor device die being placed within the semiconductor device package. One or more wire bonds having an elevated loop height are formed on the test bond pads. After encapsulating the semiconductor device package, the package encapsulant is subject to a backgrind process to expose a portion of the test connection wire bonds. Only an amount of the package encapsulant sufficient to expose each test connection wire bond is removed, so that the remaining encapsulant will continue to have the same effect on the package as would be present in a production device. Test probes can then be applied to the exposed test connection wire bonds.

55635172, Oct 8, 1996

May 16, 1995

8/442556

Glenn A. Biery - Poughkeepsie NY
Daniel M. Boyne - Wappingers Falls NY
Kenneth P. Rodbell - Poughquag NY
Richard G. Smith - Poughkeepsie NY
Michael H. Wood - Hopewell Junction NY

International Business Machines Corporation - Armonk NY

G01R 2926

324613

A test system having an improved physical layout and electrical design allows the 1/f noise of metal interconnects to be measured at levels close to that of Johnson or thermal noise. A detailed description of examples of operation of the test system provides evidence of the effectiveness of the test system in minimizing system noise to a level significantly lower than Johnson noise. This permits quantitative measurment of the noise contribution attributable to variations in cross-sectional area of connections for various applications and for qualitative prediction of electromigration lifetimes of metal films, particularly aluminum, having different microstructures. The test system includes an enclosure which includes several nested groups of housings including a sample oven within a device under test box which is, in turn, contained within the system enclosure. Wire wound resistors powered by a DC power supply are used to provide heating without interfering with measurement of 1/f noise of a device under test (D. U. T. ). A biasing circuit and a bank of batteries are also provided with separate enclosures within the system enclosure.

54707889, Nov 28, 1995

Feb 28, 1994

8/203158

Glenn A. Biery - Poughkeepsie NY
Daniel M. Boyne - Austin TX
Hormazdyar M. Dalal - Milton NY

International Business Machines Corporation - Armonk NY

H01L 21441

437190

A method of providing interconnections to a semiconductor integrated chip designed to eliminate electromigration. The method includes the steps of forming an interconnection with segments of Al interspersed with segments of a refractory metal, wherein each aluminum segments is followed by a segment of refractory metal, aligning the aluminum and refractory metal segments with respect to each other ensuring electrical continuity.

54343852, Jul 18, 1995

Nov 2, 1992

7/970370

Glenn A. Biery - Poughkeepsie NY
Daniel M. Boyne - Wappingers Falls NY
Kenneth P. Rodbell - Poughquag NY
Richard G. Smith - Poughkeepsie NY
Michael H. Wood - Hopewell Junction NY

International Business Machines Corporation - Armonk NY

F27D 1102
H05B 1100
H02H 704

219385

A test system having an improved physical layout and electrical design allows the 1/f noise of metal interconnects to be measured at levels close to that of Johnson or thermal noise. A detailed description of examples of operation of the test system provides evidence of the effectiveness of the test system in minimizing system noise to a level significantly lower than Johnson noise. This permits quantitative measurment of the noise contribution attributable to variations in cross-sectional area of connections for various applications and for qualitative prediction of electromigration lifetimes of metal films, particularly aluminum, having different microstructures. The test system includes an enclosure which includes several nested groups of housings including a sample oven within a device under test box which is, in turn, contained within the system enclosure. Wire wound resistors powered by a DC power supply are used to provide heating without interfering with measurement of 1/f noise of a device under test (D. U. T. ). A biasing circuit and a bank of batteries are also provided with separate enclosures within the system enclosure.