Inventors:
Mark B. Goldman - Sudbury MA
Dana W. Kintigh - Acton MA
Henri R. Chalifour - Methuen MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
H01P 115
H01P 308
Abstract:
A microwave diode having an integrally formed fixed resistance layer to provide a monolithic structure. The resistance layer has an approximate value of 50-ohms when the diode is in the forward biased state. The diode in monolithic form is adaptable to be soldered directly to a housing electrically connected to the ground plane of the microstrip circuit. In the reverse bias state the junction capacitance of the structure is small enough, typically 0. 02 to 0. 05 pf, to isolate the diode from the microstrip circuit thereby minimizing the insertion loss of the device. Packaged varieties of the monolithic structure are applicable to stripline, coaxial and waveguide microwave circuits.