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Carlos D Dizon

from Newark, CA
Age ~74
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Related to:
Lorenzo B CaoiliFely V Caoili, 67Pauline Ann Caoili Torio, 35Pamela I DizonRoberto M Imperial, 46Farah L Imperial, 63Fernando L Imperial, 70Pamela R Dizon, 51Connie L ImperialTamala R Dizon, 51Patrick R Dizon, 48Katherine I DizonMaria C Saenz, 76Katherine I Dizon, 74Oliver R Caoili, 53
Connected to:
Alejandria C Dizon, 70Alvin G Dizon, 53Analyn Y Dizon, 52Catalina V Dizon, 63Cheryll N Dizon, 45Damian Dizon, 71Dianne Dizon, 34Dominic J Dizon, 31Don Dizon, 54Elmira M Dizon, 67

Carlos Dizon Phones & Addresses

  • 37078 Edith St, Newark, CA 94560 (510) 794-7086
  • Hayward, CA
  • San Mateo, CA
  • San Francisco, CA
  • Anaheim, CA
  • 37078 Edith St, Newark, CA 94560 (510) 882-8920

Work

Company: West coast quartz corporation 2010 to 2014 Position: Engineering support

Education

Degree: Bachelors, Bachelor of Science In Civil Engineering Specialities: Civil Engineering

Skills

Process Improvement • Engineering • Microsoft Excel • Manufacturing • Product Development

Emails

c***[email protected]

Industries

Semiconductors

Resumes

Resumes

Carlos Dizon Photo 1

Carlos Dizon

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Location:
Newark, CA
Industry:
Semiconductors
Work:
West Coast Quartz Corporation 2010 - 2014
Engineering Support
Education:
Don Bosco Technical Institute, Philippines 1968 - 1972
Skills:
Process Improvement
Engineering
Microsoft Excel
Manufacturing
Product Development

Business Records

Name / Title
Company / Classification
Phones & Addresses
Carlos Dizon
President, Secretary, Treasurer
C J International
321 S Beverly Dr, Beverly Hills, CA 90212

Publications

Us Patents

Silicon Ingot Fabrication

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US Patent:
20090165703, Jul 2, 2009
Filed:
Dec 31, 2007
Appl. No.:
12/006351
Inventors:
Paul Maloney - Los Gatos CA, US
Carlos Dizon - Newark CA, US
International Classification:
C30B 9/00
C30B 35/00
H01R 43/00
US Classification:
117 81, 117223, 29825
Abstract:
A method of and apparatus for growing single crystal silicon ingots is disclosed. The apparatus includes a charge structure with one or more charge units that are substantially multi-crystalline or single crystal silicon. The silicon charge structure is preferably coupled to a single crystal seed structure that can be used to grow a silicon ingot after the silicon charge unit is melted into a quartz growing crucible. The silicon charge units can be linked together through silicon linking structures that are threaded into or otherwise secured to the silicon charge units. In accordance with the method of the invention a crucible holding poly-silicon stock and the silicon charge structure are isolated within a process chamber. A process melt is formed and charged with the silicon charge structure, and a silicon ingot is formed without exposing the crystal growing chamber to an outside environment.
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Carlos D Dizon from Newark, CA, age ~74 Get Report