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Carl Hayunga Phones & Addresses

  • 42 Colette Dr, Poughkeepsie, NY 12601 (845) 462-6239
  • 42 Colette Dr, Poughkeepsie, NY 12601 (914) 462-6239

Work

Position: Financial Professional

Education

Degree: High school graduate or higher

Emails

Publications

Us Patents

Sealing And Stress Relief Layers And Use Thereof

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US Patent:
48806846, Nov 14, 1989
Filed:
Mar 11, 1988
Appl. No.:
7/167290
Inventors:
David W. Boss - Beacon NY
Timothy W. Carr - Hopewell Junction NY
Derry J. Dubetsky - Wappingers Falls NY
George M. Greenstein - Hopewell Junction NY
Warren D. Grobman - Carmel NY
Carl P. Hayunga - Poughkeepsie NY
Amanda H. Kumar - Hopewell Junction NY
Walter F. Lange - Longmont CO
Robert H. Massey - Wappingers Falls NY
Paul H. Palmateer - Wappingers Falls NY
John A. Romano - Hopewell Junction NY
Da-Yuan Shih - Poughkeepsie NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 300
B32B 700
B44C 122
B29C 3700
US Classification:
428209
Abstract:
Sealing and stress relief are provided to a low-fracture strength glass-ceramic substrate. Hermeticity is addressed through the use of capture pads in alignment with vias and through polymer overlays with interconnection between the underlying via or pad metallurgy and the device, chip, wire or pin bonded to the surface of the layer. Multilevel structures are taught along with a self-aligned sealing and wiring process.

Sputtering System For Optimizing Quartz Deposition Uniformity

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US Patent:
42383129, Dec 9, 1980
Filed:
Jul 23, 1979
Appl. No.:
6/059718
Inventors:
Arkadi Galicki - San Jose CA
Carl P. Hayunga - Poughkeepsie NY
Homi G. Sarkary - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23C 1500
US Classification:
204298
Abstract:
A sputtering system adapted for depositing quartz in uniform thicknesses upon multiple wafers processed in batches including an anode plate having a plurality of wafer locations spaced from the center of the anode, with each wafer location comprising a wafer receiving recess in the anode plate having an angular bottom slope which, in effect, tilts the wafer to an optimum deposition angle with respect to the cathode, depending upon wafer spacing from the center of the anode, to insure uniform deposition across the wafer.

Thin Film Metallization Process For Improved Metal To Substrate Adhesion

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US Patent:
56314981, May 20, 1997
Filed:
May 19, 1995
Appl. No.:
8/444667
Inventors:
Morris Anschel - Wappingers Falls NY
Douglas W. Ormond - Wappingers Falls NY
Carl P. Hayunga - Poughkeepsie NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2348
H01L 2940
US Classification:
257690
Abstract:
A metallization layer is formed on a substrate with improved adhesion thereto by performing the deposition at an elevated temperature which favors the formation of chemical bonds of the metal to the substrate as well as clusters of metal embedded within the substrate and contiguous with the metallization layer. In polymer substrates the chemical bond is made to carbonyl functional groups such as ketones or aldehydes. The adhesion is enhanced by the removal of moisture from the surface of the substrate at the elevated temperatures employed. A high degree of adhesion is also obtained through the deposition of a mixture of metals including chromium and copper which initially has a high chromium to copper ratio which is decreased during the deposition process. Completion of the process is determined by the reaching of a final desired chromium to copper ratio as observed by optical emission spectroscopy. The process can be carried out on a continuous basis by the use of a multi-chamber vacuum sputtering system.
Carl P Hayunga from Poughkeepsie, NYDeceased Get Report