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Bryon Keith Hance

from Austin, TX
Age ~58

Bryon Hance Phones & Addresses

  • 2604 Gettysburg Dr, Austin, TX 78745 (512) 292-1980
  • 2604 Gettysburg Dr, Austin, TX 78745 (512) 736-0142

Work

Company: Spansion 2007 to 2008 Position: Bill brennan

Education

Degree: Graduate or professional degree

Industries

Semiconductors

Resumes

Resumes

Bryon Hance Photo 1

Bryon Hance

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Location:
Austin, TX
Industry:
Semiconductors
Work:
Spansion 2007 - 2008
Bill Brennan

Business Records

Name / Title
Company / Classification
Phones & Addresses
Bryon Hance
Treasurer , Director
DOXOLOGY, INC
6208 Sun Vis Dr, Austin, TX 78749
Bryon Hance
Director
C. S. Lewis Hall

Publications

Us Patents

Method And Apparatus For Detecting Ion Implant Induced Defects

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US Patent:
6524869, Feb 25, 2003
Filed:
Feb 9, 2001
Appl. No.:
09/780178
Inventors:
Michael J. Satterfield - Round Rock TX
Laura A. Pressley - Austin TX
Terri A. Couteau - Rosansky TX
Daniel E. Sutton - Austin TX
Bryon K. Hance - Austin TX
David Hendrix - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 2166
US Classification:
438 14, 438 17
Abstract:
Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.

Method And Apparatus For Inspecting Wafer Defects

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US Patent:
6574359, Jun 3, 2003
Filed:
Feb 3, 2000
Appl. No.:
09/498242
Inventors:
Bryon K. Hance - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G06K 962
US Classification:
382149, 2503701, 356622, 3562374
Abstract:
Methods and apparatus for inspecting a feature on a wafer surface are provided. In one aspect a method of inspecting a feature on a film surface is provided that includes illuminating the feature with laser radiation and detecting radiation scattered from the feature with a plurality of detectors. Each of the plurality of detectors has a known position. A position of the feature observed by each of the plurality detectors is computed based upon the radiation scattered from the feature. An average position of the positions observed by each of the plurality of detectors is computed. A first value for each of the plurality of detectors is computed that is the scalar product of the known position of a given detector with the difference of the position of the feature observed by that given detector and the average of the positions observed by each of the plurality of detectors. A second value or scatter height descriptor indicative of the topography of the feature is computed by summing first values for the plurality of detectors.

Method Of Forming An Electronic Device

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US Patent:
8171627, May 8, 2012
Filed:
Dec 21, 2007
Appl. No.:
11/962714
Inventors:
Bryon K. Hance - Austin TX, US
Brian D. White - Kyle TX, US
William Brennan - Austin TX, US
Joseph W. Wiseman - Austin TX, US
Allen Evans - Dripping Springs TX, US
Assignee:
Spansion LLC - Sunnyvale CA
International Classification:
H05K 3/02
US Classification:
29847, 29825, 29846, 438634, 438637
Abstract:
A process of forming an electronic device including forming a first ultraviolet (“UV”) blocking layer over a conductive feature, wherein the first UV blocking layer lies within 90 nm of the conductive structure; forming a first insulating layer over the first UV blocking layer; and patterning the first insulating layer and the first UV blocking layer to form a first opening extending to the conductive feature, wherein during the process, the first UV blocking layer is exposed to UV radiation.

Electronic Devices With Ultraviolet Blocking Layers

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US Patent:
8643083, Feb 4, 2014
Filed:
May 7, 2012
Appl. No.:
13/465600
Inventors:
Bryon K. Hance - Austin TX, US
Brian D. White - Kyle TX, US
William Brennan - Austin TX, US
Joseph W. Wiseman - Austin TX, US
Allen Evans - Dripping Springs TX, US
Assignee:
Spansion LLC - Sunnyvale CA
International Classification:
H01L 29/792
H01L 23/48
H01L 23/52
H01L 29/40
US Classification:
257324, 257325, 257326, 257758, 257E23011, 257E23141, 257E23145
Abstract:
Devices and systems for insulating integrated circuits from ultraviolet (“UV”) light are described. The device includes a conductive feature, a first and second UV blocking layer, a first and second insulating laver, and a conductive structure. The first insulating layer overlays the first UV blocking layer. A via opening extends through the first insulating layer and the first UV blocking layer. The second UV blocking layer overlays the first insulating laver. The second insulating layer overlays the second UV blocking layer. An interconnect trench is defined in the second insulating layer and second UV blocking layer. The conductive structure is electrically connected to the conductive feature and extends into the via opening and along the interconnect trench.

Automatic Defect Source Classification

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US Patent:
6507933, Jan 14, 2003
Filed:
Jul 12, 1999
Appl. No.:
09/351540
Inventors:
Travis D. Kirsch - Austin TX
Bryon K. Hance - Austin TX
Carroll W. Webb - Dale TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G06F 1750
US Classification:
716 4, 438 14
Abstract:
A method and system for use in wafer fabrication quality control. The method and system make quantitative a qualitative integrated circuit wafer defect signature. In response to the quantitativize wafer fabrication defect signature, the method and system identify at least one cause of the defect signature.
Bryon Keith Hance from Austin, TX, age ~58 Get Report