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Brady J Gibbons

from Corvallis, OR
Age ~53
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Also known as:
John Gibbons Brady, John Y
Related to:
Agnes J Vallejos, 57Joe E VallegosFrances H GibbonsJohn T GibbonsSarah J Gibbons, 56Barbara S GibbonsThomas A Gibbons, 82Paula M GibbonsTina Gibbons, 27
Connected to:
Andy R Gibbons, 90Anne M Gibbons, 78Ben A Gibbons, 44Bethany A Gibbons, 44Carly C Gibbons, 36Carol K Gibbons, 77Carson Gibbons, 32Carter J Gibbons, 26Casey R Gibbons, 37Chere L Gibbons, 49

Brady Gibbons Phones & Addresses

  • Corvallis, OR
  • 1306 Sage St, Los Alamos, NM 87544
  • 3260 Orange St, Los Alamos, NM 87544
  • 2220 NW Robin Hood St, Corvallis, OR 97330

Work

Company: College of engineering – oregon state university Mar 2019 Position: Associate dean for research

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Penn State University 1992 to 1998

Skills

Materials Science • Thin Films • Characterization • Powder X Ray Diffraction • Nanotechnology • Scanning Electron Microscopy • Spectroscopy • Nanomaterials • Experimentation • Afm • Labview • Physics • Design of Experiments • Electron Microscopy • Science

Industries

Higher Education

Resumes

Resumes

Brady Gibbons Photo 1

Associate Dean For Research

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Location:
Corvallis, OR
Industry:
Higher Education
Work:
College of Engineering – Oregon State University
Associate Dean For Research
College of Engineering – Oregon State University
Professor of Materials Science
College of Engineering – Oregon State University Aug 2012 - May 2018
Associate Professor of Materials Science
College of Engineering – Oregon State University Sep 2013 - Dec 2017
Co-Director, Materials Synthesis and Characterization Center
College of Engineering – Oregon State University Sep 2012 - Jun 2017
Associate School Head For Undergraduate Programs
Education:
Penn State University 1992 - 1998
Doctorates, Doctor of Philosophy Penn State University Jan 1, 1992 - 1998
Master of Science, Masters Rensselaer Polytechnic Institute Jan 1, 1988 - Dec 31, 1992
Bachelors, Bachelor of Science, Engineering
Skills:
Materials Science
Thin Films
Characterization
Powder X Ray Diffraction
Nanotechnology
Scanning Electron Microscopy
Spectroscopy
Nanomaterials
Experimentation
Afm
Labview
Physics
Design of Experiments
Electron Microscopy
Science

Publications

Us Patents

Amorphous Multi-Component Metallic Thin Films For Electronic Devices

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US Patent:
8436337, May 7, 2013
Filed:
May 10, 2010
Appl. No.:
12/777194
Inventors:
John F. Wager - Corvallis OR, US
Brady J. Gibbons - Corvallis OR, US
Douglas A. Keszler - Corvallis OR, US
Assignee:
The State of Oregon Acting By and Through The State Board of Higher Education on Behalf of Oregon State Unitiversity - Corvallis OR
International Classification:
H01L 29/72
H01L 21/02
US Classification:
257 29, 257506, 257E21002, 257E29327
Abstract:
An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.

Architecture For Piezoelectric Mems Devices

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US Patent:
8456061, Jun 4, 2013
Filed:
Jan 25, 2011
Appl. No.:
13/013494
Inventors:
Brady J. Gibbons - Corvallis OR, US
Chris Shelton - Portland OR, US
Peter Mardilovich - Corvallis OR, US
Tony S. Cruz-Uribe - Independence OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 41/09
US Classification:
310333, 310358, 310359, 29 2535
Abstract:
A piezoelectric thin film device comprises a piezoelectric thin film having upper and lower surfaces and a defined tilted crystal morphology, a top electrode disposed on the upper surface, a substrate having a surface morphology that corresponds to the defined crystallographically tilted morphology, and a bottom electrode disposed between and crystallographically linked to both the lower surface of the piezoelectric thin film and the substrate surface, the bottom and top electrodes having a parallel planar configuration relative to the plane of the substrate and the defined crystallographically tilted morphology having a crystallographic c-axis direction oriented at a >0 angle relative to the normal to the plane of the electrodes; and method of making the device.

Thin Film Dielectric Composite Materials

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US Patent:
20020114957, Aug 22, 2002
Filed:
Dec 21, 2000
Appl. No.:
09/747212
Inventors:
Quanxi Jia - Los Alamos NM, US
Brady Gibbons - Los Alamos NM, US
Alp Findikoglu - Los Alamos NM, US
Bae Park - Los Alamos NM, US
International Classification:
B32B015/04
US Classification:
428/446000, 428/469000, 428/701000
Abstract:
A dielectric composite material comprising at least two crystal phases of different components with TiOas a first component and a material selected from the group consisting of BaSrTiOwhere x is from 0.3 to 0.7, PbCaTiOwhere x is from 0.4 to 0.7, SrPbTiOwhere x is from 0.2 to 0.4, BaCdTiOwhere x is from 0.02 to 0.1, BaTiZrOwhere x is from 0.2 to 0.3, BaTiSnOwhere x is from 0.15 to 0.3, BaTiHfOwhere x is from 0.24 to 0.3, PbLaTiOwhere x is from 0.23 to 0.3, (BaTiO)(PbFeNbO)where x is from 0.75 to 0.9, (PbTiO)(PbCoWO)where x is from 0.1 to 0.45, (PbTiO)(PbMgWO)where x is from 0.2 to 0.4, and (PbTiO)(PbFeTaO)where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

Lead-Free Piezoelectric Materials With Enhanced Fatigue Resistance

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US Patent:
20130153812, Jun 20, 2013
Filed:
Sep 30, 2010
Appl. No.:
13/819946
Inventors:
Yu Hong Jeon - Corvallis OR, US
David Cann - Corvallis OR, US
Eric Patterson - Corvallis OR, US
Brady Gibbons - Corvallis OR, US
Peter Mardilovich - Corvallis OR, US
International Classification:
H01L 41/187
US Classification:
252 629PZ
Abstract:
A lead-free piezoelectric ceramic material has the general chemical formula xBi(ATi)O-y(BiK)TiO-z(BiNa)TiO, wherein x+y+z=1, x≠0, and A=Ni or Mg.

Lead-Free Piezoelectric Material Based On Bismuth Zinc Titanate-Bismuth Potassium Titanate-Bismuth Sodium Titanate

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US Patent:
20130161556, Jun 27, 2013
Filed:
Sep 30, 2010
Appl. No.:
13/819994
Inventors:
Yu Hong Jeon - Corvallis OR, US
David Cann - Corvallis OR, US
Eric Patterson - Corvallis OR, US
Brady Gibbons - Corvallis OR, US
Peter Mardilovich - Corvallis OR, US
International Classification:
H01L 41/187
US Classification:
252 629PZ
Abstract:
A lead-free piezoelectric ceramic material has the general chemical formula xBi(ZnTi)O-y(BiK)TiO-z(BiNa)TiO, wherein x+y+z=1 and x, y, z≠0.

Method Of Preparing A Solid Solution Ceramic Material Having Increased Electromechanical Strain, And Ceramic Materials Obtainable Therefrom

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US Patent:
20220209100, Jun 30, 2022
Filed:
May 22, 2020
Appl. No.:
17/612075
Inventors:
- Huntingdon, Cambridgeshire, GB
Brady GIBBONS - Corvallis OR, US
Peter MARDILOVICH - Huntingdon, Cambridgeshire, GB
International Classification:
H01L 41/43
C04B 35/49
C04B 35/64
H01L 41/187
B41J 2/14
Abstract:
The present invention relates to a method of preparing a solid solution ceramic material having increased electromechanical strain, as well as ceramic materials obtainable therefrom and uses thereof. In one aspect, the present invention provides a method A method of increasing electromechanical strain in a solid solution ceramic material which exhibits an electric field induced strain derived from a reversible transition from a non-polar state to a polar state; i) determining a molar ratio of at least one polar perovskite compound having a polar crystallographic point group to at least one non-polar perovskite compound having a non-polar crystallographic point group which, when combined to form a solid solution, forms a ceramic material with a major portion of a non-polar state; ii) determining the maximum polarization, P, remanent polarisation, P, and the difference, P−P, for the solid solution formed in step i); and either: iii)a) modifying the molar ratio determined in step i) to form a different solid solution of the same perovskite compounds which exhibits an electric field induced strain and which has a greater difference, P−P, between maximum polarization, P, and remanent polarisation, P, than for the solid solution from step i), or; iii)b) adjusting the processing conditions used for preparing the solid solution formed in step i) to increase the difference, P−P, in maximum polarization, P, and remanent polarisation, P, of the solid solution.

Method Of Making Thin Films

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US Patent:
20210254239, Aug 19, 2021
Filed:
Jun 13, 2019
Appl. No.:
16/972997
Inventors:
- Corvallis OR, US
Dylan FAST - Corvallis OR, US
May NYMAN - Corvallis OR, US
Brady J. GIBBONS - Corvallis OR, US
Matthew O. CLARK - Corvallis OR, US
International Classification:
C30B 29/30
B05D 1/00
C30B 7/04
C01G 33/00
H01L 41/317
Abstract:
Embodiments disclosed herein include potassium sodium niobate (KNN) films and methods of making such films. In an embodiment, a method of forming a potassium sodium niobate (KNN) film comprises preparing a solution comprising water, potassium hexaniobate salts, and sodium hexaniobate salts. In an embodiment, the solution is spin coated onto a substrate to form a film on at least a portion of a surface of the substrate. In an embodiment, the method may further comprise heat treating the film.

Methods Of Identifying And Preparing A Ceramic Material Exhibiting An Electric Field Induced Strain

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US Patent:
20200095169, Mar 26, 2020
Filed:
Feb 2, 2018
Appl. No.:
16/483604
Inventors:
David CANN - Corvallis OR, US
Brady GIBBONS - Corvallis OR, US
Peter MARDILOVICH - Cambridge, GB
International Classification:
C04B 35/468
H01L 41/187
C04B 35/475
Abstract:
The present invention relates to a method for identifying a solid solution ceramic material of a plurality of perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition, as well as a method for making such ceramic materials and ceramic materials obtainable therefrom. In particular, the present invention is directed to a method of identifying a solid solution ceramic material of at least three perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition; said method comprising the steps of: i) determining a molar ratio of at least one tetragonal perovskite compound to at least one non-tetragonal perovskite compound which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a tetragonal phase having an axial ratio c/a of greater than 1.005 to 1.04; and ii) determining a molar ratio of at least one additional non-tetragonal perovskite compound to the combination of perovskite compounds from step i) at the determined molar ratio which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a pseudo-cubic phase having an axial ratio c/a of from 0.995 to 1.005 and/or a rhombohedral angle of 900.5 degrees.
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Brady J Gibbons from Corvallis, OR, age ~53 Get Report