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Bernd Geh Phones & Addresses

  • 6916 Cholla St, Scottsdale, AZ 85254
  • Tempe, AZ
  • Phoenix, AZ
  • Maricopa, AZ
  • 6845 E Jenan Dr, Scottsdale, AZ 85254

Work

Company: Zeiss group 1988 Position: Senior principal scientist

Education

School / High School: Ludwig - Maximilians Universität München 1979 to 1988 Specialities: Physics

Skills

Optics • Lithography • Metrology • Thin Films • Simulations • Physics • Interferometry • Photolithography • Laser • Semiconductors • R&D • Nanotechnology • Photonics • Semiconductor Industry • Sensors • Materials Science • Spectroscopy • Design of Experiments • Matlab • Laser Physics • Optical Engineering • Failure Analysis • Research • Science • Experimentation • Image Processing • Scanning Electron Microscopy • Optoelectronics • Pvd • Plasma Physics • Analysis • Powerpoint Development • Vacuum • Customer Insight • Mems • Applied Mathematics • Long Term Customer Relationships • Chaos Management • Community Development • Electron Microscopy • Italian Cuisine • Silicon • Nanofabrication • Microfabrication • Simulation • Fiber Optics • Mathematics • Surface Chemistry • Semiconductor Process • Cvd

Languages

German • English

Interests

Science and Technology

Industries

Semiconductors

Resumes

Resumes

Bernd Geh Photo 1

Senior Principal Scientist

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Location:
Phoenix, AZ
Industry:
Semiconductors
Work:
Zeiss Group
Senior Principal Scientist
Education:
Ludwig - Maximilians Universität München 1979 - 1988
Skills:
Optics
Lithography
Metrology
Thin Films
Simulations
Physics
Interferometry
Photolithography
Laser
Semiconductors
R&D
Nanotechnology
Photonics
Semiconductor Industry
Sensors
Materials Science
Spectroscopy
Design of Experiments
Matlab
Laser Physics
Optical Engineering
Failure Analysis
Research
Science
Experimentation
Image Processing
Scanning Electron Microscopy
Optoelectronics
Pvd
Plasma Physics
Analysis
Powerpoint Development
Vacuum
Customer Insight
Mems
Applied Mathematics
Long Term Customer Relationships
Chaos Management
Community Development
Electron Microscopy
Italian Cuisine
Silicon
Nanofabrication
Microfabrication
Simulation
Fiber Optics
Mathematics
Surface Chemistry
Semiconductor Process
Cvd
Interests:
Science and Technology
Languages:
German
English

Business Records

Name / Title
Company / Classification
Phones & Addresses
Bernd Geh
Director
KA ILA DIA
Charitable Arts and Culture
6845 E Jenan Dr, Scottsdale, AZ 85254
6919 E Cholla St, Scottsdale, AZ 85254
Director 6845 East Jenan Dr, Scottsdale, AZ 85254

Publications

Us Patents

Lithographic Apparatus And Device Manufacturing Method

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US Patent:
7423727, Sep 9, 2008
Filed:
Jan 25, 2005
Appl. No.:
11/041873
Inventors:
Michael Totzeck - Schwabisch Gmund, DE
Bernd Peter Geh - Scottsdale AZ, US
Skip Miller - Phoenix AZ, US
Assignee:
ASML Netherlands B.V.
International Classification:
G03B 27/64
US Classification:
355 67, 355 71
Abstract:
A lithographic apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern, a substrate table configured to hold a substrate and a projection system configured to project the beam as patterned onto a target portion of the substrate. The lithographic apparatus further includes a polarization modifier disposed in a path of the beam. The polarization modifier comprises a material having a radially varying birefringence.

Method Of Manufacturing An Optical Component

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US Patent:
7581305, Sep 1, 2009
Filed:
Apr 12, 2004
Appl. No.:
10/821959
Inventors:
Bernhard Geuppert - Aalen, DE
Jens Kugler - Heubach, DE
Thomas Ittner - Aalen, DE
Bernd Geh - Scottsdale AZ, US
Rolf Freimann - Aalen, DE
Guenther Seitz - Spiegelberg, DE
Bernhard Fellner - Aalen, DE
Bernd Doerband - Aalen, DE
Stefan Schulte - Aalen-Waldhausen, DE
Assignee:
Carl Zeiss SMT AG - Oberkochen
International Classification:
G01R 31/28
US Classification:
29593, 295921, 296021, 29833, 29855, 351159, 351177, 356124, 356125, 356127, 356512, 356515, 451 6, 451 8, 451 42, 451 43, 451 54
Abstract:
A method of manufacturing an optical component comprising a substrate and a mounting frame with plural contact portions disposed at predetermined distances from each other is provided. The method comprises providing a measuring frame separate from the mounting frame for mounting the substrate, which measuring frame comprises a number of contact portions equal to a number of the contact portions of the mounting frame, wherein respective distances between the contact portions of the measuring frame are substantially equal to the corresponding distances between those of the mounting frame, measuring a shape of the optical surface of the substrate, while the substrate is mounted on the measuring frame, and mounting the substrate on the mounting frame such that the contact portions of the mounting frame are attached to the substrate at regions which are substantially the same as contact regions at which the substrate was attached to the measuring frame.

Lithographic Apparatus And Device Manufacturing Method

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US Patent:
7684013, Mar 23, 2010
Filed:
May 18, 2006
Appl. No.:
11/436058
Inventors:
Steven George Hansen - Phoenix AZ, US
Donis George Flagello - Scottsdale AZ, US
Wolfgang Singer - Aalen, DE
Bernd Peter Geh - Scottsdale AZ, US
Vladan Blahnik - Aalen, DE
Assignee:
ASML Netherlands B.V. - Veldhoven
Carl Zeiss SMT AG - Oberkochen
International Classification:
G03B 27/54
G03B 27/72
US Classification:
355 67, 355 71
Abstract:
A lithographic apparatus includes an illumination unit including a radiation source configured to generate a radiation bundle, an illumination optics with a numerical aperture NAand an aperture system; a projection lens having a first numerical aperture NA; a support arranged between the illumination unit and the projection lens and configured to support a patterning device; a substrate support configured to support a substrate on which structures on the patterning device are imaged, wherein the first numerical aperture NAof the projection lens is smaller than the numerical aperture NAof the illumination unit.

Method, Program Product And Apparatus For Obtaining Short-Range Flare Model Parameters For Lithography Simulation Tool

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US Patent:
7818151, Oct 19, 2010
Filed:
May 2, 2006
Appl. No.:
11/415423
Inventors:
Tamer Coskun - Cupertino CA, US
Sangbong Park - Union City CA, US
Jang Fung Chen - Cupertino CA, US
Bernd Geh - Scottsdale AZ, US
Assignee:
ASML MaskTools B.V. - Veldhoven
International Classification:
G06F 17/50
US Classification:
703 6, 716 21
Abstract:
A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.

Illuminator For A Lithographic Apparatus And Method

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US Patent:
7952685, May 31, 2011
Filed:
Mar 15, 2007
Appl. No.:
11/724331
Inventors:
Michel Fransois Hubert Klaassen - Eindhoven, NL
Hendrikus Robertus Marie Van Greevenbroek - Eindhoven, NL
Bernd Geh - Scottsdale AZ, US
Emil Peter Schmitt-Weaver - Selkirk NY, US
Assignee:
Carl Zeiss SMT AG - Oberkochen
ASML Netherlands B.V. - Veldhoven
International Classification:
G03B 27/72
G03B 27/42
US Classification:
355 71, 355 53
Abstract:
An illuminator for a lithographic apparatus, the illuminator including an illumination mode defining element and a plurality of polarization modifiers, the polarization modifiers being moveable into or out of partial intersection with a radiation beam having an angular and spatial distribution as governed by an illumination mode defining element.

Method For Determining Intensity Distribution In The Image Plane Of A Projection Exposure Arrangement

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US Patent:
7961297, Jun 14, 2011
Filed:
Sep 2, 2006
Appl. No.:
12/065451
Inventors:
Joern Greif-Wuestenbecker - Vienna, AT
Beate Boehme - Grosspuerschuetz, DE
Ulrich Stroessner - Jena, DE
Michael Totzeck - Schwaebisch Gmuend, DE
Vladimir Kamenov - Essingen, DE
Olaf Dittmann - Bopfingen, DE
Daniel Kraehmer - Essingen, DE
Toralf Gruner - Aalen-Hofen, DE
Bernd Geh - Scottsdale AZ, US
Assignee:
Carl Zeiss SMS GmbH - Jena
International Classification:
G03B 27/72
G03B 27/32
G03B 27/68
G03B 27/42
G03B 27/54
US Classification:
355 71, 355 52, 355 53, 355 67, 355 77
Abstract:
A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.

Lithographic Processing Optimization Based On Hypersampled Correlations

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US Patent:
8120748, Feb 21, 2012
Filed:
Feb 22, 2007
Appl. No.:
11/709188
Inventors:
Bernd Geh - Scottsdale AZ, US
Roger Irwin - Phoenix AZ, US
Eric Anthony Janda - Chandler AZ, US
David Merritt Phillips - Corrales NM, US
Assignee:
ASML Netherlands B.V. - Veldhoven
International Classification:
G03B 27/52
G03B 27/42
G03B 27/44
G03B 27/32
US Classification:
355 27, 355 53, 355 54, 355 55, 355 77
Abstract:
A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e. g. , Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.

Projection Objective For Microlithography

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US Patent:
8212988, Jul 3, 2012
Filed:
Aug 3, 2005
Appl. No.:
11/658574
Inventors:
Bernd Geh - Scottsdale AZ, US
Assignee:
Carl Zeiss GmbH - Oberkochen
International Classification:
G03B 27/42
US Classification:
355 53, 355 55, 355 67
Abstract:
A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured in such a way that a defined image field curvature of the projection objective is set in such a way that an object surface that is curved convexly with respect to the projection objective can be imaged into a planar image surface. What can be achieved given a suitable setting of the object surface curvature is that a gravitation-dictated bending of a mask does not have a disturbing effect on the imaging quality.
Bernd P Geh from Scottsdale, AZ, age ~65 Get Report