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Bentao B Cui

from Brighton, MA
Age ~50

Bentao Cui Phones & Addresses

  • Brighton, MA
  • Auburndale, MA
  • Arlington, MA
  • Bethlehem, PA
  • 11837 Harvest Ln, Eden Prairie, MN 55347 (952) 941-6100
  • 7325 Moonlight Ln, Eden Prairie, MN 55346
  • Hillsboro, OR
  • Chandler, AZ
  • Minneapolis, MN
  • 6133 Muhlenberg Ct, Bethlehem, PA 18017

Work

Company: Iqe singapore Apr 2014 Position: Senior global project manager

Education

School / High School: University of Minnesota- Minneapolis, MN 2005 Specialities: M.S. in Electrical Engineering

Resumes

Resumes

Bentao Cui Photo 1

Engineering Manager

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Location:
Brighton, MA
Industry:
Semiconductors
Work:
SVT Associates, Inc since Jun 2007
Sr. Research Scientist

Intel Corp Nov 2005 - Jun 2007
Sr. Engineer

CEMS Jan 2001 - Oct 2005
Research Associate

University of Minnesota 2000 - 2005
Research Associates
Education:
University of Minnesota-Twin Cities 2000 - 2005
Ph.D., Materials Science and EngineerOne US patent and One International patent
Skills:
Semiconductors
Thin Films
R&D
Design of Experiments
Semiconductor Industry
Characterization
Materials Science
Cvd
Manufacturing
Failure Analysis
Engineering
Epitaxy
Afm
Management
Silicon
Process Improvement
Spc
Product Development
Jmp
Photolithography
Nanotechnology
Medical Devices
Statistical Tools
Device Characterization
Sputtering
Cross Functional Team Leadership
Research and Development
Statistical Process Control
Bentao Cui Photo 2

Bentao Cui Bethlehem, PA

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Work:
IQE Singapore

Apr 2014 to 2000
Senior Global Project Manager

IQE
Bethlehem, PA
Jun 2012 to Apr 2014
Production Engineering Manager

AOS, Fab - J
Hillsboro, OR
Nov 2010 to Jun 2012
Process Integration Manager

SVT Associates Inc
Eden Prairie, MN
Jun 2007 to Nov 2010
Project Manager

Intel Corp
Chandler, AZ
Nov 2005 to Jun 2007
Sr. Engineer

Research Associates, Univ. of Minnesota
Minneapolis, MN
Jan 2001 to Oct 2005
Technician

Education:
University of Minnesota
Minneapolis, MN
2005
M.S. in Electrical Engineering

Xinjiang University
Urumchi, CN
1997
Bachelor of Science in Physics

Bentao Cui Photo 3

Bentao Cui

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Publications

Us Patents

Growth Of Low Dislocation Density Group-Iii Nitrides And Related Thin-Film Structures

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US Patent:
20100090311, Apr 15, 2010
Filed:
Jun 4, 2007
Appl. No.:
11/810122
Inventors:
Philip I. Cohen - Mendota Heights MN, US
Bentao Cui - Eden Prairie MN, US
International Classification:
H01L 29/20
H01L 21/04
H01L 29/06
US Classification:
257615, 438478, 257E29089, 257E2104, 257E29005
Abstract:
Methods of growing Group-III nitride thin-film structures having reduced dislocation density are provided. Methods in accordance with the present invention comprise growing a Group-III nitride thin-film material while applying an ion flux and preferably while the substrate is stationary or non-rotating substrate. The ion flux is preferably applied as an ion beam at a glancing angle of incidence. Growth under these conditions creates a nanoscale surface corrugation having a characteristic features size, such as can be measured as a wavelength or surface roughness. After the surface corrugation is created, and preferably in the same growth reactor, the substrate is rotated in an ion flux which cause the surface corrugation to be reduced. The result of forming a surface corrugation and then subsequently reducing or removing the surface corrugation is the formation of a nanosculpted region and polished transition region that effectively filter dislocations. Repeating such nanosculpted and polished regions advantageously provide significant reduction in dislocation density in thin-film structures.
Bentao B Cui from Brighton, MA, age ~50 Get Report