Search

Benjamin Petro Phones & Addresses

  • 897 Riding Ln, Saint Charles, IL 60174
  • St Charles, IL
  • Aurora, IL
  • Chicago, IL
  • Normal, IL
  • Lincoln, IL
  • Geneva, IL
  • Sahuarita, AZ

Resumes

Resumes

Benjamin Petro Photo 1

Scientist Ii

View page
Location:
897 Riding Ln, Saint Charles, IL 60174
Industry:
Semiconductors
Work:
Cabot Microelectronics
Scientist Ii

Cabot Microelectronics Mar 2013 - Sep 2015
Scientist I

University of Chicago Feb 2011 - Feb 2013
Postdoc

The University of Arizona Jan 2007 - May 2009
Research Assistant

The University of Arizona Jan 2005 - Dec 2006
Teaching Assistant
Education:
University of Arizona 2005 - 2009
Doctorates, Doctor of Philosophy, Chemistry
Illinois State University 2003 - 2004
Master of Science, Masters, Chemistry
Illinois State University 1999 - 2002
Bachelors, Bachelor of Science, Chemistry
Skills:
Nmr
Ir
Characterization
Computational Chemistry
Spectroscopy
Inorganic Chemistry
Nanotechnology
Chemistry
Uv/Vis
Science
Catalysis
Analytical Chemistry
Laboratory
Electrochemistry
Organometallic Chemistry
Pes
Inorganic Synthesis
Surface
Laboratory Safety
Laser
Research and Development
Nanoparticles
Gas Chromatography
Ftir
Gc Ms
Teaching
Tga
Research
Materials
Data Analysis
Formulation
Benjamin Petro Photo 2

Benjamin Petro

View page
Skills:
Credit Trading
Benjamin Petro Photo 3

Benjamin Petro

View page
Location:
United States

Publications

Us Patents

Composition And Method For Dielectric Cmp

View page
US Patent:
20210115298, Apr 22, 2021
Filed:
Oct 22, 2020
Appl. No.:
17/077070
Inventors:
- Aurora IL, US
Steven KRAFT - Elgin IL, US
Fernando HUNG LOW - Naperville IL, US
Benjamin PETRO - St. Charles IL, US
Na ZHANG - Naperville IL, US
Julianne TRUFFA - New Lenox IL, US
International Classification:
C09G 1/02
C09G 1/16
C01F 17/229
C01F 17/235
Abstract:
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of greater than about 6 meq/g.

Composition And Method For Dielectric Cmp

View page
US Patent:
20210115299, Apr 22, 2021
Filed:
Oct 22, 2020
Appl. No.:
17/077155
Inventors:
- Aurora IL, US
Steven KRAFT - Elgin IL, US
Fernando HUNG LOW - Naperville IL, US
Benjamin PETRO - St. Charles IL, US
Na ZHANG - Naperville IL, US
Julianne TRUFFA - New Lenox IL, US
International Classification:
C09G 1/02
C09K 3/14
B24B 37/04
Abstract:
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of less than about 6 meq/g.

Cobalt Polishing Accelerators

View page
US Patent:
20170260421, Sep 14, 2017
Filed:
May 24, 2017
Appl. No.:
15/603634
Inventors:
- Aurora IL, US
Andrew WOLFF - Darien IL, US
Phillip W. CARTER - Round Lake IL, US
Kristin HAYES - St. Charles IL, US
Benjamin PETRO - Aurora IL, US
International Classification:
C09G 1/02
H01L 21/321
B24B 37/04
C23F 3/04
Abstract:
The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NRRRwherein R, R, and Rare independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R, R, and Rare hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about to about . The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Cobalt Polishing Accelerators

View page
US Patent:
20160115353, Apr 28, 2016
Filed:
Oct 21, 2015
Appl. No.:
14/919449
Inventors:
- Aurora IL, US
Andrew Wolff - Darien IL, US
Phillip W. Carter - Round Lake IL, US
Kristin Hayes - St. Charles IL, US
Benjamin Petro - Aurora IL, US
International Classification:
C09G 1/02
H01L 21/321
B24B 37/04
Abstract:
The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NRRRwherein R, R, and Rare independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R, R, and Rare hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Slurry For Chemical Mechanical Polishing Of Cobalt

View page
US Patent:
20160108286, Apr 21, 2016
Filed:
Oct 21, 2015
Appl. No.:
14/919526
Inventors:
- Aurora IL, US
Witold Paw - Aurora IL, US
Benjamin Petro - Aurora IL, US
Jeffrey Cross - Batavia IL, US
Glenn Whitener - Batavia IL, US
International Classification:
C09G 1/02
C23F 1/30
B24B 37/04
C23F 11/04
Abstract:
The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.
Benjamin J Petro from Saint Charles, IL, age ~43 Get Report