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Asher K Sinensky

from Menlo Park, CA
Age ~44
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Also known as:
Asher Keeling Sinesky, Keeling Sinensky Asher, Keeling Sinesky Asher, Sinensky Asher, Asher Y
Phone and address:
784 Partridge Ave, Menlo Park, CA 94025
Related to:
Alissa Emiko Lieppman, 42Sheri Helon, 53Randall Damas, 64David Helon, 52Wadine HelonMaria Garcia, 62
Connected to:
Clifford H Siner, 65James A Siner, 42John A Siner, 93Kathy L Siner, 70Mark C Siner, 57Marsharee N Siner, 39Musa Sinera, 59Karen J Sineri, 74Austin Sines, 30Brendan E Sines, 37

Asher Sinensky Phones & Addresses

  • 784 Partridge Ave, Menlo Park, CA 94025
  • Palo Alto, CA
  • Soquel, CA
  • Manhattan Beach, CA
  • Santa Ana, CA
  • Hawthorne, CA
  • San Francisco, CA
  • Union City, CA
  • Denver, CO
  • Lafayette, CA
  • Somerville, MA

Work

Company: Palantir technologies May 2007 Position: Senior executive

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Massachusetts Institute of Technology Aug 2002 to 2007 Specialities: Molecular Biology, Materials Science, Engineering

Skills

Java • Nanotechnology • Algorithms • Agile Methodologies • Thin Films • Design of Experiments • Research • Mems • Molecular Biology • Scalability • Big Data • Javascript • Distributed Systems

Languages

English

Industries

Computer Software

Resumes

Resumes

Asher Sinensky Photo 1

Senior Executive

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Location:
784 Partridge Ave, Menlo Park, CA 94025
Industry:
Computer Software
Work:
Palantir Technologies
Senior Executive
Lawrence Livermore National Laboratory May 2004 - Aug 2004
Research Associate
Sandia National Laboratories May 2001 - Aug 2001
Student Intern
Applied Materials Jan 2000 - Jun 2000
Research and Development
Education:
Massachusetts Institute of Technology Aug 2002 - 2007
Doctorates, Doctor of Philosophy, Molecular Biology, Materials Science, Engineering University of California, Berkeley Aug 1998 - May 2002
Bachelors, Bachelor of Science, Materials Science, Engineering George Washington High School
Skills:
Java
Nanotechnology
Algorithms
Agile Methodologies
Thin Films
Design of Experiments
Research
Mems
Molecular Biology
Scalability
Big Data
Javascript
Distributed Systems
Languages:
English

Publications

Us Patents

Processes For Making A Barrier Between A Dielectric And A Conductor And Products Produced Therefrom

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US Patent:
6677254, Jan 13, 2004
Filed:
Jul 23, 2001
Appl. No.:
09/911947
Inventors:
Pravin Narwankar - Sunnyvale CA
Mouloud Bakli - Crollis, FR
Ravi Rajagopalan - Sunnyvale CA
Randall S. Urdahl - Mountain View CA
Asher Sinensky - Berkeley CA
Shankarram Athreya - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2131
US Classification:
438785, 438240, 438769, 438770, 438775, 438786
Abstract:
The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta O , a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700Â C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.

Visual Data Importer

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US Patent:
8560494, Oct 15, 2013
Filed:
Sep 30, 2011
Appl. No.:
13/250629
Inventors:
Stephen Downing - Palo Alto CA, US
Kevin Richards - Menlo Park CA, US
Asher Sinensky - San Francisco CA, US
Assignee:
Palantir Technologies, Inc. - Palo Alto CA
International Classification:
G06F 7/00
G06F 17/00
G06F 17/30
US Classification:
707608, 707708, 707726
Abstract:
Techniques for visual data import into an object model are described. A graphical user interface concurrently displays a first icon that represents a first object type and a second icon that represents a second object type. Input defining object-to-data mappings between properties of the object types and structured data of one or more data sources is received. Further input defining a relationship type for relationships between the first object type and the second object type is also received. In response to the second input, a graphical representation of the relationship type is displayed, visually linking the first icon to the second icon. Based at least on the object-to-data mappings, the definition of the relationship type, and the structured data, an object model is created, comprising first objects of the first object type, second objects of the second object type, and relationships between the first objects and the second objects.

Visual Data Importer

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US Patent:
20140012886, Jan 9, 2014
Filed:
Sep 5, 2013
Appl. No.:
14/019534
Inventors:
Kevin Richards - Menlo Park CA, US
Asher Sinensky - San Francisco CA, US
Assignee:
Palantir Technologies, Inc. - Palo Alto CA
International Classification:
G06F 17/30
US Classification:
707805
Abstract:
Techniques for visual data import into an object model are described. A graphical user interface concurrently displays a first icon that represents a first object type and a second icon that represents a second object type. Input defining object-to-data mappings between properties of the object types and structured data of one or more data sources is received. Further input defining a relationship type for relationships between the first object type and the second object type is also received. In response to the second input, a graphical representation of the relationship type is displayed, visually linking the first icon to the second icon. Based at least on the object-to-data mappings, the definition of the relationship type, and the structured data, an object model is created, comprising first objects of the first object type, second objects of the second object type, and relationships between the first objects and the second objects.

Integration Of Cvd Tantalum Oxide With Titanium Nitride And Tantalum Nitride To Form Mim Capacitors

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US Patent:
6573150, Jun 3, 2003
Filed:
Oct 10, 2000
Appl. No.:
09/686451
Inventors:
Randall S. Urdahl - Mountain View CA
Pravin K. Narwankar - Sunnyvale CA
Asher K. Sinensky - Berkeley CA
Andrea M. Mendoza - Palo Alto CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2120
US Classification:
438396, 438240, 438785, 438907, 438381
Abstract:
The present invention provides a method of integrating tantalum oxide into an MIM capacitor for a semiconductor device, comprising the step of vapor-depositing the tantalum oxide from an oxygen-free liquid precursor and under process conditions comprising a deposition temperature of less than about 500Â C. and a deposition pressure of less than about 96 Torr, wherein the tantalum oxide is integrated into the MIM capacitor. Also provided is a method of forming an MIM capacitor comprising the step of integrating a tantalum oxide dielectric film with a tantalum nitride or a titanium nitride bottom electrode deposited on a substrate and a titanium nitride top electrode thereby forming an MIM capacitor.
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Asher K Sinensky from Menlo Park, CA, age ~44 Get Report