Arun Vishwanathan

6361409, Mar 26, 2002

Sep 28, 1999

09/406962

Arun Vishwanathan - Wilmington DE
David L. Shidner - Newark DE

Rodel Holdings Inc. - Williaminton DE

B24B 100

451 56, 451 59, 451 60

A polishing pad made of polymeric material has an improved surface layer which is provided by treating a surface of the polishing pad with a chemical solvent. Solubility parameter is used to select a suitable chemical solvent. The treated polishing pad can be conditioned in substantially less time than an untreated pad.

6454634, Sep 24, 2002

Aug 3, 2000

09/631784

David B. James - Newark DE
Arun Vishwanathan - Wilmington DE
Lee Melbourne Cook - Steelville PA
Peter A. Burke - Avondale PA
David Shidner - Newark DE

Rodel Holdings Inc. - Wilmington DE

B24B 100

451 41, 451 36, 451285, 451526

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning.

6582283, Jun 24, 2003

Jul 11, 2002

10/193429

David B. James - Newark DE
Arun Vishwanathan - Wilmington DE
Lee Melbourne Cook - Steelville PA
Peter A. Burke - Avondale PA
David Shidner - Newark DE

Rodel Holdings, Inc. - Wilmington DE

B24B 100

451 41, 451285, 451526, 451533

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning.

6599542, Jul 29, 2003

Aug 11, 1998

09/131771

Magdy Malak Abdel-Malik - Chester NJ
Arun Vishwanathan - Wilmington DE
Angel Manuel Orama - Hopatcong NJ

Warner-Lambert Company - Morris Plains NJ

A23G 330

426 4, 426 6

A non-stick chewing gum base containing from about 2 to 25% of a plasticized proteinaceous material and a combination of gum base materials, absent elastomer solvent and wax, which render a chewing gun composition non-stick with respect to non-porous surfaces, such as denture materials, as well as common surfaces such as floors, and including porous surfaces such as carpets.

6736709, May 18, 2004

Aug 3, 2000

09/631783

David B. James - Newark DE
Arun Vishwanathan - Wilmington DE
Lee Melbourne Cook - Steelville PA
Peter A. Burke - Avondale PA
David Shidner - Newark DE
Joseph K. So - Newark DE
John V. H. Roberts - Newark DE

Rodel Holdings, Inc. - Wilmington DE

B24B 500

451287, 451527, 451529, 451530, 451539

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.

6749485, Jun 15, 2004

Sep 20, 2000

09/665841

David B. James - Newark DE
Arun Vishwanathan - Wilmington DE
Lee Melbourne Cook - Steelville PA
Peter A. Burke - Avondale PA
David Shidner - Newark DE
Joseph K. So - Newark DE
John V. H. Roberts - Newark DE

Rodel Holdings, Inc. - Wilmington DE

B24B 100

451 41, 451 63, 451527, 451921, 51296, 51309

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness and hydrolytic stability.

6860802, Mar 1, 2005

Jun 30, 2000

09/608537

Arun Vishwanathan - Wilmington DE, US
David B. James - Newark DE, US
Lee Melbourne Cook - Steelville PA, US
Peter A. Burke - Avondale PA, US
David Shidner - Newark DE, US

Rohm and Haas Electric Materials CMP Holdings, Inc. - Wilmington DE

B24D011/00

451527, 451533, 451539, 451550

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning.

20050020082, Jan 27, 2005

Aug 20, 2004

10/922715

Arun Vishwanathan - Wilmington DE, US
David James - Newark DE, US
Lee Cook - Steelville PA, US
Peter Burke - Avondale PA, US
David Shidner - Newark DE, US

B24B049/00
B24B051/00
H01L021/302
H01L021/461

438690000

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).