Angus I Kingon

6531354, Mar 11, 2003

Jan 17, 2001

09/764253

Jon-Paul Maria - Raleigh NC
Angus Ian Kingon - Cary NC

North Carolina State University - Raleigh NC

H01L 218238

438216, 438287, 257310

Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La SiO ). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.

6541137, Apr 1, 2003

Jul 31, 2000

09/629504

Angus Kingon - Cary NC
Gregory J. Dunn - Arlington Heights IL
Stephen Streiffer - Oak Park IL
Kevin Cheek - Raleigh NC
Jon-Paul Maria - Raleigh NC
Jovica Savic - Downers Grove IL

Motorola, Inc. - Schaumburg IL

B32B 900

428701, 428702, 428699, 338226

A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include NiâP or NiâCr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.

6753567, Jun 22, 2004

Jan 13, 2003

10/341021

Jon-Paul Maria - Raleigh NC
Angus Ian Kingon - Cary NC

North Carolina State University - Raleigh NC

H01L 27108

257310, 257516, 257532

Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La SiO ). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.

6841080, Jan 11, 2005

Jan 28, 2003

10/352483

Angus Kingon - Cary NC, US
Gregory J. Dunn - Arlington Heights IL, US
Stephen Streiffer - Oak Park IL, US
Kevin Cheek - Raleigh NC, US
Jon-Paul Maria - Raleigh NC, US
Jovica Savic - Downers Grove IL, US

Motorola, Inc. - Schaumburg IL

H01G 1300
H01G 400
H01G 500
H01G 700
H01G 900

216 6, 29 2503

A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.

6936301, Aug 30, 2005

May 6, 2002

10/139454

Jon-Paul Maria - Raleigh NC, US
Angus Ian Kingon - Cary NC, US

North Carolina State University - Raleigh NC

B05D005/12
B05D003/02

427 79, 4271263, 4273762, 427377, 4273722, 427 81

Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

7029971, Apr 18, 2006

Jul 17, 2003

10/621796

William J. Borland - Cary NC, US
Jon Fredrick Ihlefeld - Raleigh NC, US
Angus Ian Kingon - Cary NC, US
Jon-Paul Maria - Raleigh NC, US

E. I. du Pont de Nemours and Company - Wilmington DE
Norch Carolina State University - Raleigh NC

H01L 21/8242

438250, 438251, 438393, 438394

Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.

7074507, Jul 11, 2006

May 27, 2005

11/139769

Jon-Paul Maria - Raleigh NC, US
Angus Ian Kingon - Cary NC, US

North Carolina State University - Raleigh NC

B32B 9/00

428701, 428457, 428469, 428689, 428697, 428699, 428336

Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

7075135, Jul 11, 2006

Nov 20, 2003

10/716878

Jeffrey Scott Cross - Kawasaki, JP
Mineharu Tsukada - Kawasaki, JP
Yoshimasa Horii - Kawasaki, JP
Alexei Gruverman - Raleigh NC, US
Angus Kingon - Raleigh NC, US

Fujitsu Limited - Kawasaki

H01L 27/108
H01L 29/76
H01L 29/94
H01L 31/119

257295, 257296, 257303

A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.