Resumes
Resumes
Andrew Minnick Phones & Addresses
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Bend, OR
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Queensbury, NY
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Ormond Beach, FL
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2 Meghan Ct, Saratoga Spgs, NY 12866 (607) 227-1396
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Saratoga Springs, NY
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7 Lagrand Ct, Ithaca, NY 14850
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Essex Junction, VT
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Los Angeles, CA
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2 Meghan Ct, Saratoga Springs, NY 12866
Publications
Us Patents
Micro-Electromechanical System Devices
View pageUS Patent:
8319254, Nov 27, 2012
Filed:
Feb 14, 2011
Appl. No.:
13/027209
Inventors:
Scott G. Adams - Ithaca NY, US
Andrew J. Minnick - Ithaca NY, US
Charles W. Blackmer - Ithaca NY, US
Mollie K. Devoe - Ithaca NY, US
Andrew J. Minnick - Ithaca NY, US
Charles W. Blackmer - Ithaca NY, US
Mollie K. Devoe - Ithaca NY, US
Assignee:
Kionix, Inc. - Ithaca NY
International Classification:
H01L 29/74
US Classification:
257108, 257E29324, 438 50, 438 52
Abstract:
A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.
Micro-Electromechanical System Devices
View pageUS Patent:
20130026584, Jan 31, 2013
Filed:
Aug 10, 2012
Appl. No.:
13/571844
Inventors:
Scott G. ADAMS - Ithaca NY, US
Andrew J. MINNICK - Ithaca NY, US
Charles W. BLACKMER - Ithaca NY, US
Mollie K. DEVOE - Ithaca NY, US
Andrew J. MINNICK - Ithaca NY, US
Charles W. BLACKMER - Ithaca NY, US
Mollie K. DEVOE - Ithaca NY, US
Assignee:
Kionix, Inc. - Ithaca NY
International Classification:
H01L 29/84
US Classification:
257415, 257E29324
Abstract:
A micro-electromechanical system (MEMS) device can include a substrate and a first beam suspended relative to a substrate surface. The first beam can include a first portion and a second portion that are separated by an isolation joint made of an insulative material. The first and second portions can each include a first semiconductor and a first dielectric layer. The MEMS device can also include a second beam suspended relative to the substrate surface. The second beam can include a second semiconductor and a second dielectric layer to promote curvature of the second beam. The MEMS device can also include a third beam suspended relative to the substrate surface. The third beam consists essentially of a first material. The second beam is configured to move relative to the third beam in response to an acceleration along an axis perpendicular to the surface of the substrate.
Materials And Methods For Passivation Of Metal-Plated Through Glass Vias
View pageUS Patent:
20210391228, Dec 16, 2021
Filed:
Jun 10, 2020
Appl. No.:
16/897788
Inventors:
- Irvine CA, US
Christopher F. Keimel - Niskayuna NY, US
Chris Nassar - Ballston Spa NY, US
Andrew Minnick - Queensbury NY, US
Christopher F. Keimel - Niskayuna NY, US
Chris Nassar - Ballston Spa NY, US
Andrew Minnick - Queensbury NY, US
International Classification:
H01L 23/15
H01L 23/29
C23C 16/455
C23C 16/40
H01L 23/29
C23C 16/455
C23C 16/40
Abstract:
A through-glass via (TGV) formed in a glass substrate may comprise a metal plating layer formed in the TGV. The TGV may have a three-dimensional (3D) topology through the glass substrate and the metal plating layer conformally covering the 3D topology. The TGV may further comprise a barrier layer disposed over the metal plating layer, and a metallization layer disposed over the barrier layer. The metallization layer may be electrically coupled to the metal plating layer through the barrier layer. The barrier layer may comprise a metal-nitride film disposed on the metal plating layer that is electrically coupled to the metallization layer. The barrier layer may comprise a metal film disposed over the metal plating layer and over a portion of glass surrounding the TGV, and an electrically-insulating film disposed upon the metal film, the electrically-insulating film completely overlapping the metal plating layer and partially overlapping the metal film.
Refractory Seed Metal For Electroplated Mems Structures
View pageUS Patent:
20170066645, Mar 9, 2017
Filed:
Sep 3, 2015
Appl. No.:
14/844132
Inventors:
- Schenectady NY, US
Christopher Fred Keimel - Schenectady NY, US
Marco Francesco Aimi - Niskayuna NY, US
Andrew Minnick - Saratoga Springs NY, US
Renner Stephen Ruffalo - Menands NY, US
Christopher Fred Keimel - Schenectady NY, US
Marco Francesco Aimi - Niskayuna NY, US
Andrew Minnick - Saratoga Springs NY, US
Renner Stephen Ruffalo - Menands NY, US
International Classification:
B81B 3/00
B81C 1/00
B81C 1/00
Abstract:
A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.