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Andrew Joseph Adamczyk

from Auburn, AL
Age ~44
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Also known as:
Andrew J Adamczyk, Andrew M Adamczyk, Andrew J Adamzyk, Andy J Adamczyk, Andre Adamczyk, Adam Adamczyk
Related to:
Lauren A Petrich, 28
Connected to:
Amber L Adamczyk, 34Aneta J Adamczyk, 47Arkadiusz Adamczyk, 57Bryan T Adamczyk, 43Danielle M Adamczyk, 44Jaime L Adamczyk, 43Joseph W Adamczyk, 74Keri Adamczyk, 63Larissa Adamczyk, 41Magdalena W Adamczyk, 47

Andrew Adamczyk Phones & Addresses

  • Auburn, AL
  • Scottsdale, AZ
  • Emmaus, PA
  • Macungie, PA
  • 43 Dalrymple St, Jamaica Plain, MA 02130 (857) 203-9006
  • Santa Monica, CA
  • Evanston, IL
  • Chicago, IL

Work

Company: Versum materials 2016 to 2017 Position: Computational chemist and engineer

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Northwestern University 2005 to 2010 Specialities: Chemical Engineering

Skills

Molecular Modeling • Catalysis • Chemistry • Chemical Engineering • Simulations • Materials Science • Nanoparticles • Spectroscopy • Molecular Dynamics • Nanotechnology • R&D • Kinetics • Protein Chemistry • Reaction Engineering • Inorganic Chemistry • Surface Chemistry • Computational Chemistry • Characterization • High Throughput Screening • Research and Development • Research

Industries

Higher Education

Resumes

Resumes

Andrew Adamczyk Photo 1

Assistant Professor Of Chemical Engineering

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Location:
Auburn, AL
Industry:
Higher Education
Work:
Versum Materials 2016 - 2017
Computational Chemist and Engineer
Auburn University 2016 - 2017
Assistant Professor of Chemical Engineering
Air Products 2012 - 2016
Computational Chemist and Engineer
Massachusetts Institute of Technology (Mit) 2011 - 2012
Research Associate
University of Southern California 2010 - 2011
Research Associate
Education:
Northwestern University 2005 - 2010
Doctorates, Doctor of Philosophy, Chemical Engineering Illinois Institute of Technology 1998 - 2002
Bachelors, Bachelor of Science, Chemical Engineering Brother Rice High School 1994 - 1998
Skills:
Molecular Modeling
Catalysis
Chemistry
Chemical Engineering
Simulations
Materials Science
Nanoparticles
Spectroscopy
Molecular Dynamics
Nanotechnology
R&D
Kinetics
Protein Chemistry
Reaction Engineering
Inorganic Chemistry
Surface Chemistry
Computational Chemistry
Characterization
High Throughput Screening
Research and Development
Research

Publications

Us Patents

Etching Solution For Simultaneously Removing Silicon And Silicon-Germanium Alloy From A Silicon-Germanium/Silicon Stack During Manufacture Of A Semiconductor Device

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US Patent:
20190103282, Apr 4, 2019
Filed:
Sep 26, 2018
Appl. No.:
16/142291
Inventors:
- Tempe AZ, US
Yi-Chia Lee - Danshu, TW
Wen Dar Liu - Chupei City, TW
Chi-Hsien Kuo - Chupei City, TW
Andrew J. Adamczyk - Auburn AL, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
H01L 21/306
H01L 21/3105
H01L 21/02
H01L 29/06
H01L 29/423
H01L 29/10
Abstract:
Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.

Etching Solution For Selectively Removing Silicon Over Silicon-Germanium Alloy From A Silicon-Germanium/ Silicon Stack During Manufacture Of A Semiconductor Device

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US Patent:
20190085240, Mar 21, 2019
Filed:
Aug 22, 2018
Appl. No.:
16/109172
Inventors:
- Tempe AZ, US
Yi-Chia Lee - Chupei City, TW
Andrew J. Adamczyk - Auburn AL, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C09K 13/02
H01L 21/8234
H01L 21/306
H01L 21/311
Abstract:
Etching compositions suitable for the selective removal of silicon over silicon-germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal.

Etching Solution For Selectively Removing Silicon-Germanium Alloy From A Silicon-Germanium/Silicon Stack During Manufacture Of A Semiconductor Device

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US Patent:
20190088492, Mar 21, 2019
Filed:
Aug 22, 2018
Appl. No.:
16/108499
Inventors:
- Tempe AZ, US
Yi-Chia Lee - Chupei City, TW
Andrew J. Adamczyk - Auburn AL, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
H01L 21/306
H01L 21/02
C09K 13/06
C09K 13/08
Abstract:
Described herein is an etching solution comprising water; oxidizer; water-miscible organic solvent; fluoride ion source; and optionally, surfactant. Such compositions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.

Use Of Silyl Bridged Alkyl Compounds For Dense Osg Films

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US Patent:
20180122632, May 3, 2018
Filed:
Oct 20, 2017
Appl. No.:
15/789790
Inventors:
- Tempe AZ, US
Robert Gordon Ridgeway - Chandler AZ, US
Jennifer Lynn Anne Achtyl - Chandler AZ, US
William Robert Entley - Center Valley PA, US
Dino Sinatore - Whitehall PA, US
Kathleen Esther Theodorou - Bethlehem PA, US
Andrew J. Adamczyk - Scottsdale AZ, US
International Classification:
H01L 21/02
C23C 16/50
C23C 16/48
C23C 16/46
Abstract:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
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Andrew Joseph Adamczyk from Auburn, AL, age ~44 Get Report