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Alfred L Wong

from San Francisco, CA
Age ~85
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Also known as:
Alfred T Wong, Et Al Wong, Alfred W Ong
Phone and address:
548 Lombard St, San Francisco, CA 94133
(415) 788-0990
Related to:
Ann W Lee, 66Helen Wong, 92Yun J Lee, 51Wendy Lee, 52Vince Wong, 65
Connected to:
Adonya B Wong, 57Aileen K Wong, 39Akira N Wong, 33Alba A Wong, 79Alice Wong, 62Alick L Wong, 41Alina M Wong, 39Allen Wong, 66Ankie Y Wong, 62Arleen M Wong, 71

Alfred Wong Phones & Addresses

  • 548 Lombard St, San Francisco, CA 94133 (415) 788-0990 (415) 788-5657 (415) 956-2278
  • 548 Lombard St APT A, San Francisco, CA 94133 (415) 788-0990
  • 1388 Pacific Ave, San Francisco, CA 94109 (415) 563-2321 (415) 673-3376
  • 1510 Pacific Ave, San Francisco, CA 94109 (415) 563-3697
  • 2333 Pacific Ave, San Francisco, CA 94115 (415) 292-9998
  • 2331 Pacific Ave, San Francisco, CA 94115
  • 6936 Rainbow Dr, San Jose, CA 95129 (408) 255-8442
  • Novato, CA
  • Berkeley, CA

Professional Records

Lawyers & Attorneys

Alfred Wong Photo 1

Alfred Wong - Lawyer

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ISLN:
1000554498
Admitted:
1989
Alfred Wong Photo 2

Alfred Wong - Lawyer

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Office:
Takushi, Wong, Lee & Yee A Law Corporation
Specialties:
Real Estate
Financing
General Practice
ISLN:
902646610
Admitted:
1964
University:
University of Hawaii and Marquette University, B.S., 1953
Law School:
University of California, Hastings College of Law, J.D., 1964

Business Records

Name / Title
Company / Classification
Phones & Addresses
Alfred Wong
J & D Wong Family Limited Partnership
Business Services · Trust Management
2737 Gough St, San Francisco, CA 94123
Alfred Wong
President
CABOT OVERSEAS INC
353 Sacramento St 19 Flr, San Francisco, CA 94111
353 Sacramento St, San Francisco, CA 94111
Alfred Wong
President
TAX & ACCOUNTING PROS INC
Tax Return Preparation Services
4837 Ridgewood Dr, Fremont, CA 94555
Alfred L. Wong
President
M & W REALTY INVESTMENTS, INC
1540 Grant Ave, San Francisco, CA 94133

Publications

Amazon

Optical Imaging In Projection Microlithography (Spie Tutorial Texts In Optical Engineering Vol. Tt66)

Optical Imaging in Projection Microlithography (SPIE Tutorial Texts in Optical Engineering Vol. TT66)

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Here for the first time is an integrated mathematical view of the physics and numerical modeling of optical projection lithography that efficiently covers the full spectrum of the important concepts. Alfred Wong offers rigorous underpinning, clarity in systematic formulation, physical insight into e...
Author

Alfred Kwok-Kit Wong

Binding

Paperback

Pages

276

Publisher

SPIE Publications

ISBN #

047103570X

EAN Code

9780819458292

ISBN #

2

Alfred Wong Partnership: Innovation And Knowledge (Talenti)

Alfred Wong Partnership: Innovation and Knowledge (Talenti)

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In the brief period of forty years, Alfred Wong's Partnership's contribution to the cityscape of Singapore has been significant and diverse, producing comprehensive architecture on the cutting edge of design innovation and technology.
Author

Paolo Righetti

Binding

Paperback

Pages

100

Publisher

l'Arca Edizioni

ISBN #

887838061X

EAN Code

9788878380615

ISBN #

3

Cost And Performance In Integrated Circuit Creation (Proceedings Of Spie) By Wong, Alfred Kwok-Kit (2003) Paperback

Cost and Performance in Integrated Circuit Creation (Proceedings of SPIE) by Wong, Alfred Kwok-Kit (2003) Paperback

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Author

Alfred Kwok-Kit Wong

Binding

Paperback

Publisher

Society of Photo Optical

ISBN #

5

Maintenance of the HIPAS Ionospheric Radio Frequency Heater at Two Rivers, Alaska

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Author

Alfred Y. Wong

Binding

Paperback

Publisher

PN

ISBN #

8

Design for Manufacturability Through Design-process Integration (Proceedings of Spie)

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Author

Alfred K. Wong, Vivek K. Singh

Binding

Paperback

Pages

588

Publisher

Society of Photo Optical

ISBN #

0819466409

EAN Code

9780819466402

ISBN #

7

Us Patents

Contact Printing Using A Magnified Mask Image

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US Patent:
6961186, Nov 1, 2005
Filed:
Sep 26, 2003
Appl. No.:
10/672620
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred Kwok-Kit Wong - Brookline MA, US
Assignee:
Takumi Technology Corp. - Sunnyvale CA
International Classification:
G02B009/00
US Classification:
359649, 359754
Abstract:
Improvements in the fabrication of integrated circuits are driven by the decrease of the size of the features printed on the wafers. Current lithography techniques limits have been extended through the use of phase-shifting masks, off-axis illumination, and proximity effect correction. More recently, liquid immersion lithography has been proposed as a way to extend even further the limits of optical lithography. This invention described a methodology based on contact printing using a projection lens to define the image of the mask onto the wafer. As the imaging is performed in a solid material, larger refractive indices can be obtained and the resolution of the imaging system can be increased.

Mask Data Preparation

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US Patent:
7055127, May 30, 2006
Filed:
Oct 27, 2003
Appl. No.:
10/694474
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred K. Wong - Brookline MA, US
Assignee:
Takumi Technology Corp. - Sunnyvale CA
International Classification:
G06F 17/50
US Classification:
716 19, 716 21
Abstract:
The manufacturing of integrated circuits relies on the use of optical proximity correction (OPC) to correct the printing of the features on the wafer. The data is subsequently fractured to accommodate the format of existing mask writer. The complexity of the correction after OPC can create some issues for vector-scan e-beam mask writing tools as very small slivers are created when the data is converted to the mask write tool format. Moreover the number of shapes created after fracturing is quite large and are not related to some important characteristics of the layout like for example critical areas. A new technique is proposed where the order of the OPC and fracturing steps is reversed. The fracturing step is done first in order to guarantee that no slivers are created and that the number of shapes is minimized. The shapes created can also follow the edges of critical zones so that critical and non-critical edges can be differentiated during the subsequent OPC step.

Design-Manufacturing Interface Via A Unified Model

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US Patent:
7155689, Dec 26, 2006
Filed:
Oct 7, 2003
Appl. No.:
10/680592
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred K. Wong - Brookline MA, US
Assignee:
Magma Design Automation, Inc. - Santa Clara CA
International Classification:
G06F 17/50
US Classification:
716 4, 716 5, 716 19
Abstract:
Subtleties of advanced fabrication processes and nano-scale phenomena associated with integrated circuit miniaturization have exposed the insufficiencies of design rules. Such inadequacies have adverse impact on all parts of the integrated circuit creation flow where design rules are used. In addition, segregation of the various layout data modification steps required for deep sub-micrometer manufacturing are resulting in slack and inefficiencies. This invention describes methods to improve integrated circuit creation via the use of a unified model of fabrication processes and circuit elements that can complement or replace design rules. By capturing the interdependence among fabrication processes and circuit elements, the unified model enables efficient layout generation, resulting in better integrated circuits.

Mask Data Preparation

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US Patent:
7614033, Nov 3, 2009
Filed:
May 26, 2006
Appl. No.:
11/442110
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred Kwok-Kit Wong - Brookline MA, US
Assignee:
Takumi Technology Corp. - Santa Clara CA
International Classification:
G06F 17/50
US Classification:
716 21, 716 7, 716 11, 716 19
Abstract:
The manufacturing of integrated circuits relies on the use of optical proximity correction (OPC) to correct the printing of the features on the wafer. The data is subsequently fractured to accommodate the format of existing mask writer. The complexity of the correction after OPC can create some issues for vector-scan e-beam mask writing tools as very small slivers are created when the data is converted to the mask write tool format. Moreover the number of shapes created after fracturing is quite large and are not related to some important characteristics of the layout like for example critical areas. A new technique is proposed where the order of the OPC and fracturing steps is reversed. The fracturing step is done first in order to guarantee that no slivers are created and that the number of shapes is minimized. The shapes created can also follow the edges of critical zones so that critical and non-critical edges can be differentiated during the subsequent OPC step.

Contact Or Proximity Printing Using A Magnified Mask Image

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US Patent:
7932020, Apr 26, 2011
Filed:
Jul 10, 2003
Appl. No.:
10/616603
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred K. Wong - Brookline MA, US
Assignee:
Takumi Technology Corporation - Santa Clara CA
International Classification:
G21K 5/10
US Classification:
430396, 430311, 2504922, 25049222
Abstract:
Improvements in the fabrication of integrated circuits are driven by the decrease of the size of the features printed on the wafers. Current lithography techniques limits have been extended through the use of phase-shifting masks, off-axis illumination, and proximity effect correction. More recently, liquid immersion lithography has been proposed as a way to extend even further the limits of optical lithography. This invention described a methodology based on contact or proximity printing using a projection lens to define the image of the mask onto the wafer. As the imaging is performed in a solid material, larger refractive indices can be obtained and the resolution of the imaging system can be increased.

Lithography Aware Timing Analysis

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US Patent:
8473876, Jun 25, 2013
Filed:
Jul 20, 2007
Appl. No.:
11/781054
Inventors:
Emre Tuncer - Santa Cruz CA, US
Hui Zheng - Round Rock TX, US
Vivek Raghavan - Mountain View CA, US
Anirudh Devgan - Austin TX, US
Amir Ajami - Sunnyvale CA, US
Alessandra Nardi - Hayward CA, US
Tao Lin - Sunnyvale CA, US
Pramod Thazhathethil - Bangalore, IN
Alfred Wong - Brookline MA, US
Assignee:
Synopsys, Inc. - Mountain View CA
International Classification:
G06F 17/50
US Classification:
716 54, 716 51, 716 55, 716113
Abstract:
A method for performing timing analysis includes receiving information specifying an integrated circuit. A neighborhood of shapes associated with the integrated circuit is then determined. Delay information associated with the integrated circuit is generated based on the neighborhood of shapes. The neighborhood of shapes may be determined by determining a first set of spacings to a boundary of a first cell from an internal shape. A second set of spacings may be determined from the boundary of the first cell to a shape of a second cell. A lithography process may be characterized using the first and second set of spacings.

Lithography Aware Leakage Analysis

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US Patent:
8572523, Oct 29, 2013
Filed:
Jul 20, 2007
Appl. No.:
11/781043
Inventors:
Emre Tuncer - Santa Cruz CA, US
Hui Zheng - Round Rock TX, US
Vivek Raghavan - Mountain View CA, US
Anirudh Devgan - Austin TX, US
Amir Ajami - Sunnyvale CA, US
Alessandra Nardi - Hayward CA, US
Tao Lin - Sunnyvale CA, US
Pramod Thazhathethil - Bangalore, IN
Alfred Wong - Brookline MA, US
Assignee:
Synopsys, Inc. - Mountain View CA
International Classification:
G06F 17/50
US Classification:
716 55, 716 52, 716 53, 716 54, 716112, 716113, 716133, 716134, 716136, 703 16
Abstract:
A method for performing leakage analysis includes receiving information specifying an integrated circuit. A neighborhood of shapes associated with the integrated circuit is then determined. Leakage information associated with the integrated circuit is generated based on the neighborhood of shapes. The neighborhood of shapes may be determined by determining a first set of spacings to a boundary of a first cell from an internal shape. A second set of spacings may be determined from the boundary of the first cell to a shape of a second cell. A lithography process may be characterized using the first and second set of spacings.

Contact Or Proximity Printing Using A Magnified Mask Image

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US Patent:
20110207056, Aug 25, 2011
Filed:
Apr 25, 2011
Appl. No.:
13/066816
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred Kwok-Kit Wong - Brookline MA, US
International Classification:
G03F 7/20
G03B 27/54
US Classification:
430319, 355 67
Abstract:
Improvements in the fabrication of integrated circuits are driven by the decrease of the size of the features printed on the wafers. Current lithography techniques limits have been extended through the use of phase-shifting masks, off-axis illumination, and proximity effect correction. More recently, liquid immersion lithography has been proposed as a way to extend even further the limits of optical lithography. This invention described a methodology based on contact or proximity printing using a projection lens to define the image of the mask onto the wafer. As the imaging is performed in a solid material, larger refractive indices can be obtained and the resolution of the imaging system can be increased.
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Alfred L Wong from San Francisco, CA, age ~85 Get Report