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Alexandra Navrotsky

from Tempe, AZ
Age ~81
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Also known as:
Navrotsky Alexandra
Connected to:
Diana Navrotska, 34Sriharsha Navudu, 56Praveen K Navuduri, 42Sarita Navuluru, 45Elton E Navy, 67Tracy D Navy, 56Ulysses S Navy, 52Ma Naw, 37Savy S Naw, 65Michael Nawa, 60

Alexandra Navrotsky Phones & Addresses

  • Tempe, AZ
  • 1112 Ovejas Ave, Davis, CA 95616 (530) 759-8322
  • Princeton, NJ
  • Yolo, CA
  • 1112 Ovejas Ave, Davis, CA 95616 (650) 440-9629

Work

Company: University of california, davis Position: Director of neat oru & peter a. rock thermochemistry laboratory; distinguished professor

Education

Degree: Associate degree or higher

Skills

Research

Industries

Higher Education

Resumes

Resumes

Alexandra Navrotsky Photo 1

Director Of Neat Oru And Peter A Rock

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Location:
72 1St St, Woodland, CA 95695
Industry:
Higher Education
Work:
University of California, Davis
Director of NEAT ORU & Peter A. Rock Thermochemistry Laboratory; Distinguished Professor
Skills:
Research

Publications

Us Patents

Semiconductor Structures And Methods Of Fabricating Semiconductor Structures Comprising Hafnium Oxide Modified With Lanthanum, A Lanthanide-Series Metal, Or A Combination Thereof

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US Patent:
7141857, Nov 28, 2006
Filed:
Jun 30, 2004
Appl. No.:
10/883180
Inventors:
Zhiyi Yu - Gilbert AZ, US
Jay A. Curless - Phoenix AZ, US
Yong Liang - Gilbert AZ, US
Alexandra Navrotsky - Davis CA, US
Sergey Ushakov - Davis CA, US
Alexander Demkov - Austin TX, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01L 29/94
H01L 21/469
US Classification:
257405, 438785
Abstract:
Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnO, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.

Methods For Removing Organic Compounds From Nano-Composite Materials

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US Patent:
20040151651, Aug 5, 2004
Filed:
Jan 30, 2003
Appl. No.:
10/356325
Inventors:
Alexandra Navrotsky - Davis CA, US
Atul Parikh - Davis CA, US
Assignee:
The Regents of the University of California
International Classification:
C01B033/12
US Classification:
423/335000, 423/592100
Abstract:
The present invention provides methods for selectively removing organic compound from a nano-composite material which comprises the organic compound that is dispersed within a solid inorganic compound structure. In particular, methods of the present invention comprise irradiating the nano-composite material with electromagnetic radiation wavelength that is shorter than the wavelength of visible light.

Wikipedia

Alexandra Navrotsky

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Alexandra Navrotsky is a physical chemist who is widely known as a leading scientist in the field of nanogeoscience. She is an elected member of the United ...

Isbn (Books And Publications)

Physics and Chemistry of Earth Materials

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Author

Alexandra Navrotsky

ISBN #

0521353785

Physics and Chemistry of Earth Materials

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Author

Alexandra Navrotsky

ISBN #

0521358949

Thermodynamics of Minerals and Melts

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Author

Alexandra Navrotsky

ISBN #

0387905308

Perovskite: A Structure of Great Interest to Geophysics and Materials Science

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Author

Alexandra Navrotsky

ISBN #

0875900712

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Alexandra Navrotsky from Tempe, AZ, age ~81 Get Report