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Alexander A Govyadinov

from Warrington, PA
Age ~45
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Also known as:
Sasha A Govyadinov, Sasha Sasha Govyadinov
Related to:
Vera Govyadinov, 71Pavel A Govyadinov, 35
Connected to:
Alexander H Gow, 38Diane E Gow, 59Eliza M Gow, 63Floyd A Gow, 56Jared R Gow, 41Logan J Gow, 34Russell D Gow, 69Stacey A Gow, 62Valerie T Gow, 65Kimberly N Gowac, 58

Alexander Govyadinov Phones & Addresses

  • Warrington, PA
  • Philadelphia, PA
  • 4200 Walnut Blvd, Corvallis, OR 97330

Skills

Microscopy • AFM • Physics • LaTeX • Fortran • Teaching • Mathematics • Programming • Microsoft Office • Nanotechnology • Linux • Research

Languages

English • Russian • Spanish

Industries

Research

Resumes

Resumes

Alexander Govyadinov Photo 1

Alexander Govyadinov

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Location:
Pamplona Area, Spain
Industry:
Research
Skills:
Microscopy
AFM
Physics
LaTeX
Fortran
Teaching
Mathematics
Programming
Microsoft Office
Nanotechnology
Linux
Research
Languages:
English
Russian
Spanish

Business Records

Name / Title
Company / Classification
Phones & Addresses
Alexander N Govyadinov
TECHNOLOGY VENTURES, LLC
8552 E Via Del Palacio, Scottsdale, AZ 85258
4200 NW Walnut #2, Corvallis, OR 97330

Publications

Us Patents

Co-Deposited Films With Nano-Columnar Structures And Formation Process

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US Patent:
6770353, Aug 3, 2004
Filed:
Jan 13, 2003
Appl. No.:
10/341651
Inventors:
Peter Mardilovich - Corvallis OR
Alexander Govyadinov - Corvallis OR
David Neiman - Corvallis OR
Gregory S Herman - Albany OR
David Champion - Lebanon OR
James ONeil - Corvallis OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
B32B 300
US Classification:
428209, 428210, 4283044, 428446, 428450, 428698, 313230, 429 12
Abstract:
The invention concerns co-deposited films with nano-columnar structures. A film of the invention is formed upon a substrate, and includes a nano-columnar structure of a first material and a co-deposited second material.

Emitter Device With Focusing Columns

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US Patent:
6822241, Nov 23, 2004
Filed:
Oct 3, 2002
Appl. No.:
10/264599
Inventors:
David Schut - Philomath OR
Alexander Govyadinov - Corvallis OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01J 306
US Classification:
250398, 2504922, 313409
Abstract:
An emitter device including a focusing array with plural focusing columns to focus emissions from one or more emitters onto a target medium. Relative movement between the target medium and the focused emissions allows each focusing column to focus emissions over an area of the target medium encompassing the movement range. In a preferred embodiment, separate emitter, focusing array and target medium substrates are used. The focusing array may be moveable, or in a particularly preferred embodiment, is affixed to the emitter substrate, in which case the target medium substrate is movable or the focusing array includes beam direction control.

Emitter And Method Of Making

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US Patent:
6835947, Dec 28, 2004
Filed:
Jan 31, 2002
Appl. No.:
10/066158
Inventors:
Alexander Govyadinov - Corvallis OR
Michael J. Regan - Corvallis OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 2906
US Classification:
257 10, 313310
Abstract:
An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Dielectric Emitter With Pn Junction

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US Patent:
6841794, Jan 11, 2005
Filed:
Feb 18, 2003
Appl. No.:
10/369365
Inventors:
Zhizhang Chen - Corvallis OR, US
Hung Liao - Corvallis OR, US
Alexander Govyadinov - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 2906
H01L 2912
US Classification:
257 10, 257 11
Abstract:
A method for emitting electrons includes the steps of applying a voltage to an electron source to cause hot electrons to be generated with the source, and applying an electric field to cause at least a portion of the hot electrons to be emitted from the electron source.

Electronic Device With Aperture And Wide Lens For Small Emission Spot Size

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US Patent:
6891185, May 10, 2005
Filed:
Jun 24, 2003
Appl. No.:
10/603445
Inventors:
Alexander Govyadinov - Corvallis OR, US
Paul J. Benning - Lesington MA, US
William R Knight - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L029/06
H01L029/12
US Classification:
257 10, 257 79
Abstract:
An electronic device of a preferred embodiment includes a tip emitter formed in a well defined in a substrate. An extractor disposed about the well extracts emissions from the tip emitter. A wide lens is spaced apart from the extractor for focusing the emissions through an opening defined the wide lens. The opening has a diameter greater than a diameter of the well. An aperture is disposed between the extractor and the wide lens.

Tunneling Emitter With Nanohole Openings

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US Patent:
6911768, Jun 28, 2005
Filed:
Oct 1, 2002
Appl. No.:
10/263055
Inventors:
Zhizhang Chen - Corvallis OR, US
Sriram Ramamoorthi - Corvallis OR, US
Hung Liao - Corvallis OR, US
Paul Benning - Corvallis OR, US
Alexander Govyadinov - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01J001/312
US Classification:
313391, 313309, 313336
Abstract:
An emitter has an electron supply and a porous cathode layer having nanohole openings. The emitter also has a tunneling layer disposed between the electron supply and the cathode layer.

Storage Device With Charge Trapping Structure And Methods

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US Patent:
6984862, Jan 10, 2006
Filed:
Oct 20, 2003
Appl. No.:
10/689940
Inventors:
Hang Liao - Corvallis OR, US
Zhizhang Chen - Corvallis OR, US
Alexander Govyadinov - Corvallis OR, US
Heon Lee - Pohang-Si, KR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 29/788
US Classification:
257316, 36518518, 36518514, 36518511, 36518522, 369100, 369101
Abstract:
A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.

Methods For Fabricating Three Dimensional Anisotropic Thin Films And Products Produced Thereby

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US Patent:
6998331, Feb 14, 2006
Filed:
Mar 21, 2003
Appl. No.:
10/394403
Inventors:
Yuval C. Avniel - Missoula MT, US
Peter Mardilovich - Corvallis OR, US
Alexander Govyadinov - Corvallis OR, US
Assignee:
Technology Ventures, LLC - Scottsdale AZ
International Classification:
H01L 21/20
US Classification:
438584, 438605, 438679, 438680, 438681, 438761
Abstract:
A three dimensional structure comprising at least two materials capable of being deposited by vapor deposition. The structure is fabricated by the controlled vapor deposition of the materials onto a substrate.
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Alexander A Govyadinov from Warrington, PA, age ~45 Get Report