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Aaron Scott Eppler

from Los Gatos, CA
Age ~54
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Also known as:
Aaron S Eppler
Related to:
Gloria M Acerboni, 51Lonni Trykowski, 72Gloria A EpplerJerry Eppler, 85
Connected to:
Brock A Eppler, 40Derek L Eppler, 36Eric A Eppler, 46Jennie L Eppler, 108Judy M Eppler, 73Julie K Eppler, 58Kelly D Eppler, 77Lori E Eppler, 50Marcy L Eppler, 58Vincent Eppler, 59

Aaron Eppler Phones & Addresses

  • Los Gatos, CA
  • Carmel Valley, CA
  • 3081 Barrington Ter, Fremont, CA 94536
  • 36911 Montecito Dr, Fremont, CA 94536
  • 40640 High St, Fremont, CA 94538
  • Sunnyvale, CA
  • 545 Elm St, El Cerrito, CA 94530 (510) 558-0104
  • Carmel, CA
  • Alameda, CA
  • La Jolla, CA

Work

Position: Technicians and Related Support Occupations

Education

Degree: High school graduate or higher

Publications

Us Patents

Stepped Upper Electrode For Plasma Processing Uniformity

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US Patent:
6824627, Nov 30, 2004
Filed:
May 7, 2002
Appl. No.:
10/139364
Inventors:
Rajinder Dhindsa - San Jose CA
Mukund Srinivasan - Fremont CA
Aaron Eppler - El Cerrito CA
Eric Lenz - Pleasanton CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 2120
US Classification:
156 60, 438710, 118723 R
Abstract:
A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

Variable Temperature Processes For Tunable Electrostatic Chuck

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US Patent:
6921724, Jul 26, 2005
Filed:
Sep 4, 2002
Appl. No.:
10/235453
Inventors:
Tom A. Kamp - San Jose CA, US
Richard Gottscho - Pleasanton CA, US
Steve Lee - Fremont CA, US
Chris Lee - Oakland CA, US
Yoko Yamaguchi - Fremont CA, US
Vahid Vahedi - Albany CA, US
Aaron Eppler - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L021/302
US Classification:
438715, 438714, 15634552, 15634553
Abstract:
An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

Photoresist Conditioning With Hydrogen Ramping

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US Patent:
7053003, May 30, 2006
Filed:
Oct 27, 2004
Appl. No.:
10/975209
Inventors:
Karen Jacobs Kanarik - Saratoga CA, US
Aaron Eppler - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/302
US Classification:
438714, 438705, 438717, 438725, 438734, 216 47, 216 72
Abstract:
A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma. The conditioning plasma is stepped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer with the etch plasma.

Etch With Ramping

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US Patent:
7135410, Nov 14, 2006
Filed:
Sep 26, 2003
Appl. No.:
10/672151
Inventors:
Keren Jacobs - Saratoga CA, US
Aaron Eppler - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/302
US Classification:
438712, 438723, 438724, 15634533
Abstract:
A method for etching a feature in an etch layer through a mask over a substrate. The substrate is placed in a process chamber. An etch plasma is provided to the process chamber, where the etch plasma begins to etch. A feature is etched in the etch layer with the etch plasma. At least one etch plasma parameter is ramped during the etching of the feature to optimize plasma parameters with the changing etch depth and the feature is etched with the ramped plasma until the feature is etched to a feature depth.

Multiple Frequency Plasma Processor Method And Apparatus

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US Patent:
7405521, Jul 29, 2008
Filed:
Aug 22, 2003
Appl. No.:
10/645665
Inventors:
Raj Dhindsa - San Jose CA, US
S. M. Reza Sadjadi - Saratoga CA, US
Felix Kozakevich - Sunnyvale CA, US
Dave Trussell - Fremont CA, US
Lumin Li - Fremont CA, US
Eric Lenz - Pleasanton CA, US
Camelia Rusu - Fremont CA, US
Mukund Srinivasan - Fremont CA, US
Aaron Eppler - Fremont CA, US
Jim Tietz - Fremont CA, US
Jeffrey Marks - San Jose CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01J 7/24
C23F 1/00
C23C 16/00
US Classification:
31511121, 31511181, 15634528, 118723 R
Abstract:
A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.

Negative Bias Critical Dimension Trim

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US Patent:
7544521, Jun 9, 2009
Filed:
Sep 11, 2006
Appl. No.:
11/519384
Inventors:
Scott Briggs - Menlo Park CA, US
Aaron Eppler - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/311
H01L 21/66
US Classification:
438 9, 438587, 430 30, 257E21027, 257E21039, 257E2136
Abstract:
A method of trimming the critical dimension of an isolated line to a greater extent than a dense line is provided. A mask is formed of an organic material over the etch layer wherein the mask has at least a first region with a first pattern density and a second region with a second pattern density. A surface area of the organic material in the first region is measured. A surface area of the organic material in the second region is measured. A reverse bias trim of the mask is provided, wherein a ratio of a trim rate of the organic material in the first region to a trim rate of the organic material in the second region is related to a ratio of the measured surface area of the organic material in the first region to the measured surface area of the organic material in the second region.

Process For Etching Dielectric Films With Improved Resist And/Or Etch Profile Characteristics

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US Patent:
7547635, Jun 16, 2009
Filed:
Jun 14, 2002
Appl. No.:
10/170424
Inventors:
Aaron Eppler - Fremont CA, US
Mukund Srinivasan - Fremont CA, US
Robert Chebi - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/302
US Classification:
438710, 438714, 438715, 438723, 438725, 438735, 438743, 216 67, 216 79, 216 80, 252 791
Abstract:
A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CFH, where x≧1, y≧1, and z≧0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CH, where x≧1 and y≧4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0. 1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0. 5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.

Etch Profile Control

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US Patent:
7645707, Jan 12, 2010
Filed:
Mar 30, 2005
Appl. No.:
11/095932
Inventors:
Camelia Rusu - Fremont CA, US
Zhisong Huang - Fremont CA, US
Mukund Srinivasan - Fremont CA, US
Eric A. Hudson - Berkeley CA, US
Aaron Eppler - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/302
US Classification:
438723, 438706
Abstract:
A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising Oand a sulfur component gas comprising at least one of HS and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
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Aaron Scott Eppler from Los Gatos, CA, age ~54 Get Report