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Mark J Sowa

from Boston, MA
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Connected to:
Alina Sowa, 66Blair A Sowa, 83Brian J Sowa, 53Charles L Sowa, 64Dana M Sowa, 43Florence G Sowa, 52Heidi M Sowa, 41Jakub P Sowa, 39Jim W Sowa, 68Kenneth Sowa, 61

Mark Sowa Phones & Addresses

  • Boston, MA

Resumes

Resumes

Mark Sowa Photo 1

Senior Research Scientist

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Location:
Medford, MA
Industry:
Nanotechnology
Work:
Cambridge Nanotech
Senior Research Scientist
Nanodynamics, Inc. Dec 2006 - Mar 2008
Director of Engineering and Ndfusion, Inc
Praxair Oct 2002 - Dec 2006
Development Associate, Electronic Materials R and D
Strigidae Technologies Nov 2000 - Oct 2002
Engineering Consultant
Sandia National Laboratories Jan 1999 - Nov 2000
Post Doc
Education:
Princeton University 1992 - 1998
Doctorates, Doctor of Philosophy, Chemical Engineering University of Illinois at Urbana - Champaign 1988 - 1992
Bachelors, Bachelor of Science, Chemical Engineering Princeton University;Phd, Chemical Engineering;1992 – 1998;
Doctorates, Doctor of Philosophy, Chemical Engineering
Skills:
Plasma Physics
Plasma Etch
Ald
Thin Films
Nanotechnology
Semiconductors
Characterization
Design of Experiments
R&D
Spectroscopy
Ellipsometry
Nanomaterials
Atomic Layer Deposition
Vacuum
Silicon
Nanofabrication
Microfabrication
Coatings
Etching
Uhv
Labview
Experimentation
Thin Film Characterization
Microelectronics
Semiconductor Industry
Science
Product Development
Chemical Engineering
Experimental Physics
Scientific Presentation
Customer Satisfaction
Research and Development
Mark Sowa Photo 2

Mark Sowa

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Mark J Sowa
STRIGIDAE TECHNOLOGIES, INC

Publications

Us Patents

Improved Through Silicon Via

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US Patent:
20170194204, Jul 6, 2017
Filed:
Aug 27, 2014
Appl. No.:
15/323805
Inventors:
- San Jose CA, US
Mark Sowa - Medford MA, US
Assignee:
Ultratech, Inc. - San Jose CA
International Classification:
H01L 21/768
H01L 21/285
H01L 23/528
H01L 23/48
H01L 23/532
Abstract:
Through via holes are prepared for metallization using ALD and PEALD processing. Each via is coated with a titanium nitride barrier layer having a thickness ranging from 20 to 200 Å. A ruthenium sealing layer is formed over the titanium nitride barrier layer wherein the sealing layer is formed without oxygen to prevent oxidation of the titanium nitride barrier layer. A ruthenium nucleation layer is formed over the sealing layer wherein the nucleation layer is formed with oxygen in order to oxidize carbon during the application of the Ru nucleation layer. The sealing layer is formed by a PEALD method using plasma excited nitrogen radicals instead of oxygen.

Radical-Enhanced Atomic Layer Deposition Using Cf4 To Enhance Oxygen Radical Generation

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US Patent:
20160064208, Mar 3, 2016
Filed:
Jun 19, 2015
Appl. No.:
14/744409
Inventors:
- San Jose CA, US
Mark J. Sowa - Medford MA, US
Assignee:
ULTRATECH, INC. - San Jose CA
International Classification:
H01L 21/02
Abstract:
A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CFand O, wherein the CFis present in a concentration in the range from 0.1 vol % to 10 vol %. The plasma formed from the gas mixture generates oxygen radicals O* faster than if there were no CFpresent in the gas mixture. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the surface of the substrate. A system for performing the radical-enhanced atomic-layer deposition process using the rapidly formed oxygen radicals is also disclosed.
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Mark J Sowa from Boston, MA Get Report