Koichi Okamoto Phones & Addresses
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Rolling Hills Estates, CA
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16514 Haas Ave, Torrance, CA 90504
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Newport Beach, CA
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Laguna Niguel, CA
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Redondo Beach, CA
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Los Angeles, CA
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8 Minori, Laguna Niguel, CA 92677 (310) 530-5677
Publications
Amazon
Keiri de tsukau eibun meru : Nichijo gyomu kara kessan zeimu shinkoku made.
View page
Author
Koichi Okamoto; Okamoto ando kanpani kokusai kaikei jimusho.
Binding
Tankobon Hardcover
Publisher
Chuokeizaisha.
ISBN #
4502488100
EAN Code
9784502488108
ISBN #
6
Chokkan o kagaku suru : Sono miezaru mekanizumu.
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Author
David G Myers; Koichi Okamoto
Binding
Tankobon Hardcover
Publisher
Reitakudaigakushuppankai : Hiroikegakuenjigyobu.
ISBN #
4892056111
EAN Code
9784892056116
ISBN #
5
Yuniku-sa no shakai shinrigaku: Ninchi keiseiteki apurochi to dokujisei yokkkyu tesuto (Japanese Edition)
View page
Author
Koichi Okamoto
Binding
Tankobon Hardcover
Pages
219
Publisher
Kawashima Shoten
ISBN #
4761004592
EAN Code
9784761004590
ISBN #
4
Ichiokunin no chado koza kokoro o tagayasu.
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Author
Koichi Okamoto
Binding
Tankobon Hardcover
Publisher
Tankosha.
ISBN #
4473040224
EAN Code
9784473040220
ISBN #
3
Nihonjin no YES wa naze NO ka?: Shakai shinrigakusha ga mita kono kuni no fushigi (Japanese Edition)
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Author
Koichi Okamoto
Binding
Hardcover
Pages
229
Publisher
PHP Kenkyujo
ISBN #
4569540449
EAN Code
9784569540443
ISBN #
2
Us Patents
Nitride Semiconductor Device And A Process Of Manufacturing The Same
View pageUS Patent:
6876009, Apr 5, 2005
Filed:
Dec 9, 2002
Appl. No.:
10/314444
Inventors:
Yukio Narukawa - Anan, JP
Isamu Niki - Anan, JP
Axel Scherer - Pasadena CA, US
Koichi Okamoto - Pasadena CA, US
Yoichi Kawakami - Kusatsu, JP
Mitsuru Funato - Kyoto, JP
Shigeo Fujita - Kyoto, JP
Isamu Niki - Anan, JP
Axel Scherer - Pasadena CA, US
Koichi Okamoto - Pasadena CA, US
Yoichi Kawakami - Kusatsu, JP
Mitsuru Funato - Kyoto, JP
Shigeo Fujita - Kyoto, JP
Assignee:
Nichia Corporation - Tokushima
International Classification:
H01L031/0328
US Classification:
257183, 257187, 257200, 438 48, 438 60
Abstract:
The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.
Nitride Semiconductor Device, And Its Fabrication Process
View pageUS Patent:
7348600, Mar 25, 2008
Filed:
Oct 20, 2003
Appl. No.:
10/687768
Inventors:
Yukio Narukawa - Anan, JP
Isamu Niki - Anan, JP
Axel Scherer - Pasadena CA, US
Koichi Okamoto - Pasadena CA, US
Yoichi Kawakami - Kusatsu-shi, Shiga 525-0029, JP
Mitsuru Funato - Kyoto-shi, Kyoto 615-8084, JP
Shigeo Fujita - Kyoto-shi, Kyoto 612-0854, JP
Isamu Niki - Anan, JP
Axel Scherer - Pasadena CA, US
Koichi Okamoto - Pasadena CA, US
Yoichi Kawakami - Kusatsu-shi, Shiga 525-0029, JP
Mitsuru Funato - Kyoto-shi, Kyoto 615-8084, JP
Shigeo Fujita - Kyoto-shi, Kyoto 612-0854, JP
Assignee:
Nichia Corporation - Tokushima
California Institute of Technology - Pasadena CA
California Institute of Technology - Pasadena CA
International Classification:
H01L 21/15
US Classification:
257 79, 257 94, 257103, 257E31058
Abstract:
The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses are formed by etching in the first electrically conductive (n) type semiconductor layer formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.
Surface Plasmon Light Emitter Structure And Method Of Manufacture
View pageUS Patent:
20050285128, Dec 29, 2005
Filed:
Feb 9, 2005
Appl. No.:
11/055005
Inventors:
Axel Scherer - Laguna Beach CA, US
Koichi Okamoto - Pasadena CA, US
Koichi Okamoto - Pasadena CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
H01L029/22
US Classification:
257098000
Abstract:
A method (and resulting structures) for manufacturing light emitting semiconductor devices. The method includes providing a substrate comprising a surface region and forming a metal layer overlying the surface region of the substrate. In a specific embodiment, the metal layer and the surface region are characterized by a spatial spacing between the metal layer and the substrate to cause a coupling between electron-hole pairs generated in the substrate and a surface plasmon mode at an interface region between the metal layer and the surface region. Additionally, the interface region has a textured characteristic between the surface region and the metal layer. The textured characteristics causes emission of electromagnetic radiation through the surface plasmon mode or like mechanism according to a specific embodiment.