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Dylan J Kelly

from Los Angeles, CA
Age ~46
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Also known as:
Dylan John Kelly, Kelly Kelly, Dylan Phillips, Kelly Dylan
Phone and address:
1641 Alexandria Ave, Los Angeles, CA 90027
Related to:
Daniel K Kelly, 41Benjamin L Kelly, 55Anne T KellyEileen M Kelly, 76John KellyJohn L Kelly, 71
Connected to:
Aaronique E Kelly, 40Abbigail L Kelly, 43Agatha P Kelly, 73Alannah M Kelly, 34Alejandra M Kelly, 45Aline R Kelly, 55Aliza M Kelly, 36Amena J Kelly, 61Andra C Kelly, 89Andre Kelly, 70

Dylan Kelly Phones & Addresses

  • 1641 Alexandria Ave, Los Angeles, CA 90027
  • Royal Oaks, CA
  • Canyon Country, CA
  • 224 Maryland Ave, Glendale, CA 91206 (818) 662-0861
  • New York, NY

Resumes

Resumes

Dylan Kelly Photo 1

Restaurants Professional

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Location:
Orange County, California Area
Industry:
Restaurants

Publications

Us Patents

Circuit And Method For Controlling Charge Injection In Radio Frequency Switches

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US Patent:
20210152170, May 20, 2021
Filed:
Jul 6, 2020
Appl. No.:
16/921790
Inventors:
- San Diego CA, US
Tae Youn Kim - Irvine CA, US
Dylan J. Kelly - San Diego CA, US
Christopher N. Brindle - Poway CA, US
International Classification:
H03K 17/16
H03K 17/10
H03K 17/284
H03K 17/687
H03K 17/689
Abstract:
A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

Circuit And Method For Controlling Charge Injection In Radio Frequency Switches

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US Patent:
20180212599, Jul 26, 2018
Filed:
Nov 29, 2017
Appl. No.:
15/826453
Inventors:
- San Diego CA, US
Tae Youn Kim - Irvine CA, US
Dylan J. Kelly - San Diego CA, US
Christopher N. Brindle - Poway CA, US
International Classification:
H03K 17/16
H03K 17/284
H03K 17/10
H03K 17/687
H03K 17/689
H03K 17/04
H03K 17/08
H03K 17/06
Abstract:
A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

Low-Noise High Efficiency Bias Generation Circuits And Method

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US Patent:
20170170721, Jun 15, 2017
Filed:
Mar 4, 2015
Appl. No.:
14/638954
Inventors:
- San Diego CA, US
Robert Mark Englekirk - Pacific Palisades CA, US
Dylan J. Kelly - San Diego CA, US
International Classification:
H02M 3/07
Abstract:
A bias generation method or apparatus defined by any one or any practical combination of numerous features that contribute to low noise and/or high efficiency biasing, including: having a charge pump control clock output with a waveform having limited harmonic content or distortion compared to a sine wave; having a ring oscillator to generating a charge pump clock that includes inverters current limited by cascode devices and achieves substantially rail-to-rail output amplitude; having a differential ring oscillator with optional startup and/or phase locking features to produce two phase outputs suitably matched and in adequate phase opposition; having a ring oscillator of less than five stages generating a charge pump clock; capacitively coupling the clock output(s) to some or all of the charge transfer capacitor switches; biasing an FET, which is capacitively coupled to a drive signal, to a bias voltage via an “active bias resistor” circuit that conducts between output terminals only during portions of a waveform appearing between the terminals, and/or wherein the bias voltage is generated by switching a small capacitance at cycles of said waveform. A threshold voltage bias voltage generation circuit may A charge pump for the bias generation may include a regulating feedback loop including an OTA that is also suitable for other uses, the OTA having a ratio-control input that controls a current mirror ratio in a differential amplifier over a continuous range, and optionally has differential outputs including an inverting output produced by a second differential amplifier that optionally includes a variable ratio current mirror controlled by the same ratio-control input. The ratio-control input may therefore control a common mode voltage of the differential outputs of the OTA. A control loop around the OTA may be configured to control the ratio of one or more variable ratio current mirrors, which may particularly control the output common mode voltage, and may control it such that the inverting output level tracks the non-inverting output level to cause the amplifier to function as a high-gain integrator.

Circuit And Method For Controlling Charge Injection In Radio Frequency Switches

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US Patent:
20160226478, Aug 4, 2016
Filed:
Jan 4, 2016
Appl. No.:
14/987360
Inventors:
- San Diego CA, US
Tae Youn Kim - Irvine CA, US
Dylan J. Kelly - San Diego CA, US
Christopher N. Brindle - Poway CA, US
International Classification:
H03K 17/16
H03K 17/687
Abstract:
A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

Circuit And Method For Controlling Charge Injection In Radio Frequency Switches

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US Patent:
20150015321, Jan 15, 2015
Filed:
Apr 21, 2014
Appl. No.:
14/257808
Inventors:
- San Diego CA, US
Tae Youn Kim - Irvine CA, US
Dylan J. Kelly - San Diego CA, US
Christopher N. Brindle - Poway CA, US
Assignee:
PEREGRINE SEMICONDUCTOR CORPORATION - San Diego CA
International Classification:
H03K 17/284
H03K 17/689
H03K 17/687
US Classification:
327394
Abstract:
A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.
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Dylan J Kelly from Los Angeles, CA, age ~46 Get Report