David G Frank

6916694, Jul 12, 2005

Aug 28, 2003

10/650400

Hussein I. Hanafi - Basking Ridge NJ, US
David J. Frank - Yorktown Heights NY, US
Kevin K. Chan - Staten Island NY, US

International Business Machines Corporation - Armonk NY

H01L021/84

438166, 438530, 438938

The present invention provides a method using a damascene-gate process to improve the transport properties of FETs through strain Si. Changes in mobility and FET characteristics are deliberately made in a Si or silicon-on-insulator (SOI) structure through the introduction of local strain in the channel region, without introducing strain in the device source and drain regions. The method has the advantage of not straining the source and drain regions resulting in very low leakage junctions and also it does not require any special substrate preparation like the case of a strained Si/relaxed SiGe system. Moreover, the method is compatible with existing mainstream CMOS processing. The present invention also provides a CMOS device that has a localized strained Si channel that is formed using the method of the present invention.

7074707, Jul 11, 2006

Sep 15, 2003

10/662709

David J. Frank - Yorktown Heights NY, US
Kathryn W. Guarini - Yorktown Heights NY, US
Christopher B. Murray - Ossining NY, US
Xinlin Wang - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H01L 21/4763

438622, 438629, 438639

A connection device includes a plurality of re-configurable vias that connect a first metal layer to a second metal layer. An actuating element is disposed between the first metal layer and the second metal layer. The actuating element changes the configuration of the plurality of re-configurable vias to change the plurality of re-configurable vias between a conductive state and a non-conductive state.

7214972, May 8, 2007

Apr 25, 2005

11/113858

Hussein I. Hanafi - Basking Ridge NJ, US
David J. Frank - Yorktown Heights NY, US
Kevin K. Chan - Staten Island NY, US

International Business Machines Corporation - Armonk NY

H01L 31/00

257190, 257 18, 257192, 257347

A metal oxide semiconductor field effect transistor (MOSFET) device is provided that includes a localized strained device channel and adjoining source/drain junctions that are unstrained. The MOSFET device has a very high channel carrier mobility, while maintaining a very low leakage junction.

7342301, Mar 11, 2008

May 9, 2006

11/430477

David J. Frank - Yorktown Heights NY, US
Kathryn W. Guarini - Yorktown Heights NY, US
Christopher B. Murray - Ossining NY, US
Xinlin Wang - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H01L 23/12
H01L 21/4763

257700, 257758, 257774, 257E23164, 438622, 438629, 438639

A connection device includes a plurality of re-configurable vias that connect a first metal layer to a second metal layer. An actuating element is disposed between the first metal layer and the second metal layer. The actuating element changes the configuration of the plurality of re-configurable vias to change the plurality of re-configurable vias between a conductive state and a non-conductive state.

7488630, Feb 10, 2009

Mar 6, 2007

11/682638

David J. Frank - Yorktown Heights NY, US
Douglas C. La Tulipe, Jr. - New Fairfield CT, US
Leathen Shi - Yorktown Heights NY, US
Steven E. Steen - Peekskill NY, US
Anna W. Topol - Jefferson Valley NY, US

International Business Machines Corporation - Armonk NY

H01L 29/74
H01L 31/111

438149, 438152, 438239, 257347

A method which is intended to facilitate and/or simplify the process of fabricating interlayer vias by selective modification of the FEOL film stack on a transfer wafer is provided. Specifically, the present invention provides a method in which two dimensional devices are prepared for subsequent integration in a third dimension at the transition between normal FEOL processes by using an existing interlayer contact mask to define regions in which layers of undesirable dielectrics and metal are selectively removed and refilled with a middle-of-the-line (MOL) compatible dielectric film. As presented, the inventive method is compatible with standard FEOL/MOL integration schemes, and it guarantees a homogeneous dielectric film stack specifically in areas where interlayer contacts are to be formed, thus allowing the option of a straightforward integration path, if desired.

7666723, Feb 23, 2010

Feb 22, 2007

11/677598

David J. Frank - Yorktown Heights NY, US
Douglas C. La Tulipe, Jr. - New Fairfield CT, US
Steven E. Steen - Peekskill NY, US
Anna W. Topol - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

H01L 21/84

438155, 438455, 257E21627

Methods of wiring to a transistor and a related transistor are disclosed. In one embodiment, the method includes a method of forming wiring to a transistor, the method comprising: forming a transistor on a semiconductor-on-insulator (SOI) substrate using masks that are mirror images of an intended layout, the forming including forming a gate and a source/drain region for each and a channel, the SOI substrate including a semiconductor-on-insulator (SOI) layer, a buried insulator layer and a silicon substrate; forming a dielectric layer over the transistor; bonding the dielectric layer to another substrate; removing the silicon substrate from the SOI substrate to the buried insulator layer; forming a contact to each of the source/drain region and the gate from a channel side of the gate; and forming at least one wiring to the contacts on the channel side of the gate.

7720800, May 18, 2010

Jul 6, 2007

11/774163

Ru Fang - Beijing, CN
Liana Liyow Fong - Irvington NY, US
David C Frank - Ossining NY, US
Linh Hue Lam - Yorktown Heights NY, US
Christopher P Vignola - Port Jervis NY, US

International Business Machines Corporation - Armonk NY

G06F 17/00

707203, 707100, 707102, 707204

A method for hosting versioned web services includes steps of: receiving a request from a service requester, the request comprising version metadata; parsing the request; extracting the version metadata from the parsing step; and locating a target implementation version using the version metadata. If the target implementation version is located, the method proceeds by dynamically routing the versioned request to the target implementation version.

7822840, Oct 26, 2010

Oct 23, 2007

11/877479

Ying Chen - Beijing, CN
Ru Fang - Beijing, CN
Liana Liyow Fong - Irvington NY, US
David C. Frank - Ossining NY, US
Linh Hue Lam - Yorktown Heights NY, US

International Business Machines Corporation - Armonk NY

G06F 15/173

709223, 709203, 709219

A method for managing a web service client update without recompiling or redeploying of the client code includes the following steps or acts of: receiving a request for the web service from a subscribed client; transmitting the request to the web service; receiving notification of the web service update from a service provider or registry or some other means; parsing the notification and retrieving parameters describing the web service update; marshalling the parameters; determining whether the new web service update is compatible with the current web service invoked by the client application; updating the local service proxy instance with the marshaled parameters if the new web service update is compatible with the current web service invoked by the client application; and transmitting a notification if the web service update is not compatible with the current web service invoked by the client application.