Bang T Nguyen

6599574, Jul 29, 2003

Apr 4, 1996

08/627631

Ellie Yieh - Millbrae CA
Paul Gee - San Jose CA
Li-Qun Xia - Santa Clara CA
Francimar Campana - Milpitas CA
Shankar Venkataranan - Santa Clara CA
Dana Tribula - Palo Alto CA
Bang Nguyen - Fremont CA

Applied Materials Inc. - Santa Clara CA

C23C 1600

42725529, 42725531, 42725538, 438905, 438906

The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen. The method includes introducing a process gas containing silicon, oxygen, and first dopant atoms into the chamber; using helium as the carrier gas in the system; and processing more substrates between cleanings than a process using nitrogen as carrier gas.

6663713, Dec 16, 2003

Oct 22, 1996

08/734978

Stuardo A. Robles - Sunnyvale CA
Visweswaren Sivaramakrishnan - Santa Clara CA
Bang C. Nguyen - Fremont CA
Gayathri Rao - Allentown PA
Gary Fong - Cupertino CA
Vicente Lam - Neward CA
Peter Wai-Man Lee - San Jose CA
Mei Chang - Saratoga CA

Applied Materials Inc. - Santa Clara CA

C23C 1600

118719, 118723 E, 118724, 118726, 118729

A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.

7530880, May 12, 2009

Oct 5, 2005

11/576944

Rajeev Bajaj - Fremont CA, US
Natraj Narayanswami - San Jose CA, US
Bang C. Nguyen - Palo Alto CA, US

Semiquest Inc. - San Jose CA

B24B 49/00

451 5, 451 10, 451 11, 451288, 451527

A pad for CMP operations includes a guide plate having a plurality of holes therein and being affixed to a compressible under-layer; and a plurality of pressure-sensing and process monitoring polishing elements each affixed to the compressible under-layer and passing through a corresponding hole in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but being translatable in a vertical direction with respect to the guide plate.

63193248, Nov 20, 2001

Sep 14, 2000

9/662248

Bang C. Nguyen - Fremont CA
Ruby Liao - Sunnyvale CA
Peter W. Lee - Fremont CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118697

A method and apparatus for reducing surface sensitivity of a TEOS/O. sub. 3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.

57074518, Jan 13, 1998

May 25, 1995

8/450833

Stuardo A. Robles - Sunnyvale CA
Thanh Pham - San Jose CA
Bang C. Nguyen - Fremont CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118715

An improved method of in-situ cleaning a throttle valve in a CVD device and exhaust flow control apparatus for facilitating such cleaning. The throttle valve is repositioned such that it is juxtaposed in close proximity to the exhaust gas port of the reaction chamber. A plasma is then ignited in a cleaning gas mixture of nitrogen trifluoride, hexafluoroethane and oxygen.

61499749, Nov 21, 2000

May 5, 1997

8/851830

Bang C. Nguyen - Fremont CA
Ruby Liao - Sunnyvale CA
Peter W. Lee - Fremont CA

Applied Materials, Inc. - Santa Clara CA

C23C 1640

42725529

A method and apparatus for reducing surface sensitivity of a TEOS/O. sub. 3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.

6047713, Apr 11, 2000

Feb 3, 1994

8/191384

Stuardo A. Robles - Sunnyvale CA
Thanh Pham - San Jose CA
Bang C. Nguyen - Fremont CA

Applied Materials, Inc. - Santa Clara CA

B08B 700
C23C 1640

134 11

An improved method of in-situ cleaning a throttle valve in a CVD device and exhaust flow control apparatus for facilitating such cleaning. The throttle valve is repositioned such that it is juxtaposed in close proximity to the exhaust gas port of the reaction chamber. A plasma is then ignited in a cleaning gas mixture of nitrogen trifluoride, hexafluoroethane and oxygen.

59585102, Sep 28, 1999

Jan 8, 1996

8/583888

Visweswaren Sivaramakrishnam - Santa Clara CA
Bang C. Nguyen - Fremont CA
Gayathri Rao - Santa Clara CA
Stuardo Robles - Sunnyvale CA
Gary L. Fong - Sunnyvale CA
Vicente Lim - Newark CA
Peter W. Lee - Fremont CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

4272556

A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the sublimation of stable dimer parylene material, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and for the optional blending of the resulting gaseous parylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the parylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.